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Kangjian Bao

Publications and source records attributed to Kangjian Bao.

2 recordsLinked to original sources

Programmable and scalable on-chip WDM processing platform enabled by cascaded FSR-free resonators

Wavelength-division multiplexing (WDM) is pivotal for expanding the capacity and functionality of photonic systems, from communications to computing. However, on-chip implementation for broadband operation is fundamentally limited by the narrow free spectral range (FSR) and inefficient drop transmission of conventional optical microcavities. Here, we transcend this limit with a scalable integrated WDM processing platform based on cascaded dual-sided coupled Fabry-Pérot add-drop resonators. This unit achieves a record-large FSR-free bandwidth (> 300 nm) and low insertion loss (< 0.5 dB), while enabling independent manipulation of monochromatic light in both the wavelength and intensity domains. Leveraging these performances, we architect programmable cores with up to 20 channels in a single bus waveguide to demonstrate application versatility by configuring as: a high-capacity on-chip WDM communication fabric (2.4-Tbps single-link WDM transmission and O-to-C-band multi-subband (de)triplexing), a reconfigurable optical processor (broadband and hitless wavelength-selective switching), and a parallel computing accelerator (theoretically capable of 1.28-TOPS convolution operations, 16-channel modulation). This work establishes a unified and versatile WDM processing platform that bridges high-speed optical communication with in-line computing, charting a scalable and backward-compatible path toward petabit-per-second-class links and hundreds of TOPS of on-chip computation, resolving a critical bottleneck for next-generation photonic systems.

physics.optics↗

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits.

physics.optics↗