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Kaining Ding

Publications and source records attributed to Kaining Ding.

2 recordsLinked to original sources

Characterizing Fill Factor Limitations in Perovskite-Silicon Tandem Solar Cells

Perovskite-silicon tandem technology has exceeded the single junction theoretical efficiency limit. However, there is still distance to the thermodynamic limit mainly caused by the fill factor. This work presents a methodology to illustrate the mechanisms of FF loss in perovskite-Si monolithic tandem solar cells. Apart from the series resistance related loss characterized by electroluminescence, another loss factor is from the photoshunt, a phenomenon in which the parallel resistance apparently reduces under illumination in perovskite solar cells due to the moderate charge transport layer mobility. In addoition, the two-diode property of the Si cell can also influence the FF of tandem devices. The photoshunt can be hidden when the bottom cell is over illuminated, which explains highly efficient tandem solar cells are usually bottom cell limited. This work outlines strategies that overcoming the photoshunt issue can move the perovskite top cell closer to low FF losses in tandem solar cells.

cond-mat.mtrl-sci

A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing

Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact (IBC) exhibit high conversion efficiencies of up to 25.6%. However, due to the sophisticated back-side pattern of the doped layers and electrode structure many processing and patterning steps are required. A simplification of the patterning steps could ideally increase the yield and/or lower the production costs. We propose a patterning approach for IBC SHJ solar cells free of any photo-lithography with the help of laser-induced forward transfer (LIFT) of the individual layer stacks to create the required back-contact pattern. The concept has the potential to lower the number of processing steps significantly while at the same time giving a large degree of freedom in the processing conditions optimization of emitter and BSF since deposition of the intrinsic/doped layers and processing of the wafer are all independent from each other.

cond-mat.mtrl-sci