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Kai-He Ding

Publications and source records attributed to Kai-He Ding.

14 recordsLinked to original sources
arXiv2024

Nonlinear magneto-optical response across van Hove singularity in a non-centrosymmetric magnetic Weyl semimetal

We investigate the nonlinear magneto-optical response in non-centrosymmetric magnetic Weyl semimetals featuring a quadratic tilt, focusing particularly on the influence of the van Hove singularity (VHS). In the absence of a magnetic field, the second-order nonlinear Drude conductivity components exhibit inflection or dip behavior across the VHS. In contrast, the second-order nonlinear anomalous Hall conductivity, primarily governed by the Berry curvature dipole, manifests a subtle plateau-like structure. As the tilt strength increases, the VHS energy escalates, thereby amplifying the VHS-induced characteristics within these second-order conductivity components. However, in the presence of a magnetic field, we show that the resultant magnetic moment suppresses nonlinear electron transport while enhancing nonlinear hole transport. %both suppresses and notably enhances nonlinear magnetic-optical transport in the electron and hole regions, respectively. This effect serves to mitigate the impact of the VHS, resulting specifically in an asymmetric peak or a kinked-like structure in the magnetic field-induced contribution to the second-order nonlinear conductivity near the Weyl nodes. These findings provide new insights into the intricate interplay among the VHS, Berry curvature, and magnetic moment in nonlinear magneto-optical transport through non-centrosymmetric magnetic Weyl semimetals.

cond-mat.mes-hall↗
arXiv2023

Van Hove singularity-induced negative magnetoresistance in Dirac semimetals

Negative magnetoresistance (NMR) is a marked feature of Dirac semimetals, and may be caused by multiple mechanisms, such as the chiral anomaly, the Zeeman energy, the quantum interference effect, and the orbital moment. Recently, an experiment on Dirac semimetal Cd$_3$As$_2$ thin films revealed a new NMR feature that depends strongly on the thickness of the sample [T. Schumann, \emph{et al}., Phys. Rev. B 95, 241113(R) (2017)]. Here, we introduce a new mechanism of inducing NMR via the presence of the van Hove singularity (VHS) in the density of states. Theoretical fitting of the experimental data on magnetoconductivity and magnetoresistance shows good agreement, indicating that the observed NMR in thin films of Cd$_3$As$_2$ can be attributed to the VHS. This work provides new insights into the underlying of Dirac semimetals.

cond-mat.mes-hall↗
arXiv2017

Quantum Hall effect in ac driven graphene: from half-integer to integer case

We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at $\sigma_{xy} = \pm(n + 1/2)4e^2/h$ ($n$ is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at $\sigma_{xy} = \pm n(4e^2/h)$ starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with $\sigma_{xy} = 0$ can be realized at the band center, hence restoring fully a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the $\sigma_{xy} = 0$ state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

cond-mat.mes-hall↗
arXiv2012

Laser-assisted spin-polarized transport in graphene tunnel junctions

Keldysh nonequilibrium Green's function method is utilized to study theoretically the spin polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discussed the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependencies of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene, and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance (TMR), and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency.

cond-mat.mes-hall↗
arXiv2011

Time-dependent magneto-transport in a driven graphene spin valve

Based on the time-dependent nonequilibrium Green's function method we investigate theoretically the time and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a time-alternating gate voltage to graphene. The electrodes are magnetic with arbitrary mutual orientations of their magnetizations. We find features in the current that are governed by an interplay of the strength of the alternating field and the Dirac point in graphene: The influence of a weak alternating field on the zero bias conductance is strongly suppressed by the zero density of state at the Dirac point. In contrast, for a strong amplitude of the alternating field the current is dominated by several resonant peaks, in particular a marked peak appears at zero bias. This subtle competition results in a transition of the tunnel magnetoresistance from a broad peak to a sharp dip at a zero bias voltage applied to the electrodes. The dip amplitude can be manipulated by tuning the ac field frequency.

cond-mat.mes-hall↗
arXiv2011

Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads

We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Green's function (NGF) technique, it is demonstrated that, the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresistance (TMR) around zero bias voltage possesses a pronounced plateau structure for system with semiconducting 7-AGNR or metallic 8-AGNR in the absence of exchange splitting, but this plateau structure for 8-AGNR system is remarkably broader than that for 7-AGNR one. Interestingly, the increase of exchange splitting $\Delta$ suppresses the amplitude of the structure for 7-AGNR system. However, the TMR is enhanced much for 8-AGNR system under the bias amplitude comparable to splitting strength. Further, the current-induced spin transfer torque (STT) for 7-AGNR system is systematically larger than that for 8-AGNR one. The findings here suggest the design of GNR-based spintronic devices by using a metallic AGNR, but it is more favorable to fabricate a current-controlled magnetic memory element by using a semiconducting AGNR.

cond-mat.mes-hall↗
arXiv2010

Magneto-transport in impurity-doped few-layer graphene spin valve

Using Keldysh nonequilibrium Green's function method we study the spin-dependent transport through impurity-doped few layer graphene sandwiched between two magnetic leads with an arbitrary mutual orientations of the magnetizations. We find for parallel electrodes magnetizations that the differential conductance possesses two resonant peaks as the applied bias increases. These peaks are traced back to a buildup of a magnetic moment on the impurity due to the electrodes spin polarization. For a large mutual angle of the electrodes magnetization directions, the two resonant peaks approach each others and merge into a single peak for antiparallel orientation of the electrodes magnetizations. We point out that the tunneling magnetoresistance (TMR) may change sign for relatively small changes in the values of the polarization parameters. Furthermore, we inspect the behaviour of the differential conductance and TMR upon varying the temperature.

cond-mat.mtrl-sci↗
arXiv2010

Single or multi-flavor Kondo effect in graphene

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, $d_{z^{2}}$, ($d_{xz}$,$d_{yz}$), and ($d_{x^{2}-y^{2}}$,$d_{xy}$) couple respectively with the $\Gamma_{1}$, $\Gamma_{5} (E_{1})$, and $\Gamma_{6} (E_{2})$ representations (reps) of $C_{6v}$ group in ADC case. The basses for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

cond-mat.str-el↗
arXiv2009

Kondo effect in graphene: single vs. two-channel character

Based on the tight-binding formalism, we investigate the Anderson and the Kondo model for an adaom magnetic impurity above graphene. Different impurity positions are analyzed. Employing a partial wave representation we study the nature of the coupling between the impurity and the conducting electrons. The components from the two Dirac points are mixed while interacting with the impurity. Two configurations are considered explicitly: the adatom is above one atom (ADA), the other case is the adatom above the center the honeycomb (ADC). For ADA the impurity is coupled with one flavor for both A and B sublattice and both Dirac points. For ADC the impurity couples with multi-flavor states for a spinor state of the impurity. We show, explicitly for a 3d magnetic atom, $d_{z^{2}}$, ($d_{xz}$,$d_{yz}$), and ($d_{x^{2}-y^{2}}$,$d_{xy}$) couple respectively with the $\Gamma_{1}$, $\Gamma_{5} (E_{1})$, and $\Gamma_{6} (E_{2})$ representations (reps) of $C_{6v}$ group in ADC case. The basses for these reps of graphene are also derived explicitly. For ADA we calculate the Kondo temperature.

cond-mat.str-el↗
arXiv2009

Charge and spin Hall effect in graphene with magnetic impurities

We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.

cond-mat.mtrl-sci↗
arXiv2009

Magnetotransport through graphene spin valves

We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using Keldysh's nonequilibrium Green's function method we show that, in absence of external magnetic fields, the current-voltage curves are nonlinear. Around zero bias the differential conductance versus bias voltage possesses a strong dip. The zero-bias anomaly in the tunnel magnetoresistance (TMR) is affected strongly by the leads spin polarization. Depending on the value of the bias voltage TMR exhibits a behavior ranging from an insulating to a metallic-type. In presence of a static external magnetic field the differential conductance and TMR as a function of the bias voltage and the strength of the magnetic field show periodic oscillations due to Landau-level crossings. We also inspect the effects of the temperature and the polarization degrees on the differential conductance and TMR.

cond-mat.mes-hall↗
arXiv2008

Localized magnetic states in biased bilayer and trilayer graphene

We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the conduction band in the bilayer graphene with the gate bias applied. The magnetic moment and the corresponding magnetic transition of the impurity in bilayer graphene are also investigated.

cond-mat.mes-hall↗
arXiv2008

Dependence of electronic and optical properties on a high-frequency field for carbon nanotubes

We study theoretically the electronic structure, transport and optical properties for a zigzag single-wall carbon nanotube connected to two normal conductor leads under the irradiation of an external electromagnetic field at low temperatures, with particular emphasis on the features of high-frequency response. Using the standard nonequilibrium Green's function techniques, we examine the time-averaged density of states, the conductivity, the dielectric function and the electron energy loss spectra for the system with photon polarization parallel with the tunneling current direction, respectively. Through some numerical examples, it is shown that the density of states is strongly dependent on the incident electron energy, the strength and frequency of the applied field. For higher electron energies in comparison with lead-nanotube coupling energy, the system conductance decreases with increasing the field strength and increases with increasing the field frequency respectively, and shows some oscillation structures. Moreover, the optical functions for the system have also a rich structure with the variation of field frequency. It may demonstrate that this transport dependence on the external field parameters can be used to give the energy spectra information of carbon nanotubes and to detect the high-frequency microwave irradiation.

cond-mat.mes-hall↗
arXiv2008

Spin-orbit interaction effect on transport of Dirac fermions in graphene

We study theoretically the quantum transport properties of the Dirac fermions with spin-orbit interactions (SOIs) in graphene by using the method of Schwinger proper time together with decomposition over Landau level poles and Kubo formula. The analytical expressions for both longitudinal and Hall conductivities are derived explicitly. It is found that, from some numerical examples, when the Rashba SOI is taken into account the Shubnikov-de Haas (SdH) oscillation peaks of the longitudinal conductivity versus the chemical potential are split, while the SdH oscillation of the longitudinal conductivity versus a external magnetic field exhibits a beating pattern. Furthermore, the Rashba SOI tends to suppress the quantum Hall effect in graphene.

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