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K. Novoselov

Publications and source records attributed to K. Novoselov.

2 recordsLinked to original sources

Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies

Graphene Josephson junctions (JJ) provide a promising platform for ultra-broadband quantum sensing of light owing to graphene's frequency-independent absorption, vanishing electronic heat capacity, and weak electron-phonon coupling, which enable rapid suppression of the critical current through radiation-induced electron heating. Existing investigations have been confined to the microwave and infrared regimes, where competing detector technologies are already established; by contrast, the terahertz (THz) band - where sensitivity is most urgently lacking and no mature quantum sensor exists - has remained largerly unexplored. Here we demonstrate a strong photoresponse of graphene JJs at THz frequencies, establishing a first experimental step towards graphene-based THz quantum sensors. Under low-intensity illumination, we observe a pronounced suppression of the critical current that generates a strong photovoltage (Vph) under current bias. By tracking this Vph and independently measuring the electron temperature as a function of absorbed power, we extract a responsivity of 88 kV W^-1 and a noise-equivalent power of 45 aW Hz^-1/2 at 1.7 K. Furthermore, gate tunability of our JJ enables access to a regime where hysteretic current-voltage characteristics persist up to 0.9 K, offering a potential route toward single-photon THz detection beyond millikelvin (mK) temperatures. These findings establish graphene JJ as a versatile platform for broadband cryogenic radiation sensing and point towards their use as quantum sensors at THz frequencies.

cond-mat.mes-hall

Graphene Spin Valve Devices

Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field effect electrode can modulate the conductivity of these graphene films makes them exciting potential candidates for spin electronic devices.

cond-mat.mes-hall