arXiv subjects

K. Gas

Publications and source records attributed to K. Gas.

16 recordsLinked to original sources

arXiv2025

Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors

Understanding the electronic structure of transition-metal dopants in IV-VI semiconductors is critical for tuning their band structure. We analyze properties of Cr dopant in $Pb_{1-x}Sn_xTe$ and PbSe by magnetic and transport measurements, which are interpreted based on density functional calculations. We demonstrate that the pinning of the Fermi energy to the chromium resonant level occurs for both n-type and p-type $Pb_{1-x}Sn_xTe$ in the whole composition range. This enables us to determine the valence band and conduction band offsets at the PbTe/SnTe/PbSe heterointerfaces, which is important for designing high-prformance 2D transistors. Furthermore, the magnetic measurements reveal the presence of Cr ions in three charge states, $Cr^{3+}$, $Cr^{2+}$, and $Cr^{1+}$. The last one corresponds to the Cr dopants incorporated at the interstitial, and not the substitutional, sites. The measured concentrations of the interstitial and substitutional Cr are comparable.

cond-mat.mtrl-sci↗

arXiv2025

Ferromagnetic Resonance in a Magnetically Dilute Percolating Ferromagnet: An Experimental and Theoretical Study

Ferromagnetic resonance (FMR) serves as a powerful probe of magnetization dynamics and anisotropy in percolating ferromagnets, where short-range interactions govern long-range magnetic order. We apply this approach to Ga$_{1-x}$Mn$_x$N ($x \simeq 8$\%), a dilute ferromagnetic semiconductor, combining FMR and superconducting quantum interference device magnetometry. Our results confirm the percolative nature of ferromagnetism in (Ga,Mn)N, with a Curie temperature $T_{\mathrm{C}} = 12$ K, and reveal that despite magnetic dilution, key features of conventional ferromagnets are retained. FMR measurements establish a robust uniaxial anisotropy, dictated by Mn$^{3+}$ single-ion anisotropy, with an easy-plane character at low Mn content. While excessive line broadening suppresses FMR signals below 9 K, they persist up to 70~K, indicating the presence of non-percolating ferromagnetic clusters well above $T_{\mathrm{C}}$. The temperature dependence of the FMR intensity follows that of the magnetization, underscoring the stability of these clusters. We quantitatively describe both FMR and SQUID observables using atomistic spin model operating on a common set of parameters. The level of agreement, achieved without tuning parameters between datasets, demonstrates the robustness and practical applicability of the approach in capturing the essential physics of spin-diluted, percolating ferromagnets. This study advances the understanding of percolating ferromagnetic systems, demonstrating that FMR is a key technique for probing their unique dynamic and anisotropic properties. Our findings contribute to the broader exploration of dilute ferromagnets and provide new insights into percolating ferromagnetic systems, which will be relevant for spintronic opportunities.

cond-mat.mtrl-sci↗

arXiv2024

Magnetic Phase Diagram of Mn3+xSn1-x Epitaxial Thin Films: Extending the Anomalous Hall Effect to Low Temperatures via Intrinsic Alloying

Antiferromagnets with broken time-reversal symmetry, such as Mn3Sn, have emerged as promising platforms for exploring topological and correlated electron physics. Mn3Sn is known to show two magnetic phase transitions: a non-collinear inverse triangular antiferromagnetic (IT-AFM) spin configuration is formed below its Neel temperature, whereas at T1 that usually locates below room temperature, it transits to an incommensurate spin state. Accordingly, intriguing properties such as a strong anomalous Hall effect, observed from TN to T1, disappear below T1, limiting its utility at low temperatures. While bulk Mn3Sn has been extensively studied, the magnetic phase transitions and their tunability in thin films remain largely unexplored. Here, we investigate the magnetic and magneto-transport properties of Mn3+xSn1-x epitaxial thin films prepared by magnetron sputtering, systematically varying the Mn-Sn composition. Our results reveal that intrinsic alloying with Mn provides us with a handle to tune T1, with the IT-AFM phase stabilized down to liquid helium temperatures for x > 0.15. From a magnetic phase diagram for epitaxial thin films, we also find a consistent magnetic anomaly ~55 K below TN, accompanied by thermal hysteresis. Furthermore, the reduction of TN in thin films relative to bulk values is shown to correlate with lattice parameter changes. These findings extend the accessible temperature range for Mn3Sn's topological properties, paving the way for novel applications and further investigations into the interplay of spin, lattice, and electronic degrees of freedom in thin-film geometries.

cond-mat.mtrl-sci↗

arXiv2024

Pair anisotropy in disordered magnetic systems

Accurate modelling of magnetism is pivotal for elucidating the microscopic origins of magnetic phenomena in functional materials. However, for a specified class of materials, such as random dilute ferromagnets or alloys, the reliance on simplifying assumptions, such as single-ion anisotropy, limits the accuracy of existing spin models. In such systems, there is a significant probability of the formation of nearest-neighbor magnetic ion pairs or higher order clusters, whose presence breaks the local symmetry of otherwise isolated magnetic species. Here, we introduce the concept of pair-induced uniaxial anisotropy and demonstrate how nearby atoms influence each other's anisotropic behavior. This effect is investigated in the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N, by means of density functional theory calculations. The inclusion of pair anisotropy in the atomistic spin simulations significantly improves the agreement between simulated and experimental magnetization curves, in contrast to models that consider only single-ion anisotropy.

cond-mat.mtrl-sci↗

arXiv2024

Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling

We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.

cond-mat.mtrl-sci↗

arXiv2024

PbTe/SnTe heterostructures -- candidate platform for studying spin-triplet superconductivity

This paper explores the potential for spin-triplet superconductivity in molecular beam epitaxy grown PbTe/SnTe semiconductor heterostructures. We present convincing evidence for spin-triplet pairing by soft point-contact spectroscopy experiments, using both spin-polarized and unpolarized electrons and additionally, by detailed analysis of the upper critical field, as inferred from the four probe resistance measurements. The experimental data are described in terms of the Anderson-Brinkman-Morel model of p-wave electron pairing. Our results confirm the predictions on strain-induced topological superconductivity by E.Tang and L. Fu (Nature Physics, 10, 964, 2014).

cond-mat.supr-con↗

arXiv2023

Coexistence of Anomalous Hall Effect and Weak Net Magnetization in Collinear Antiferromagnet MnTe

Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrate that bulk form of MnTe exhibits small but detectable magnetic moment correlating with hysteretic behaviour of the AHE. We formulate a phenomenological model which explains how this feature allows to create a disbalance between states with opposite N\'eel vector and prevent the AHE signal from averaging out to zero. Moreover, we show how the dependence of AHE on the N\'eel vector arises on microscopical level and highlight the differences in Berry curvature between magnetically compensated and uncompensated systems.

cond-mat.mes-hall↗

arXiv2022

Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb

A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $\Phi_{\text{Mn}}$/$\Phi_{\text{Sb}}=1.24\pm0.02$ are closest to the stoichiometric composition, for which the N\'{e}el temperature ($T_\text{N}$) attains its maximum values. Mn-related structural defects are believed to be the driving contribution to changes in the vertical lattice parameter. Having established the optimum growth conditions, a second set of samples with CuMnSb layer thickness varied from 5 to 510 nm is fabricated. We show that for sufficiently large thicknesses, the magnetic characteristics ($T_\text{N}\simeq62$ K, Curie-Weiss temperature $\Theta_\text{CW} = -100$ K) of the stoichiometric layers do correspond to the parameters reported for bulk samples. On the other hand, we observe a reduction of $T_\text{N}$ as a function of the CuMnSb thickness for our thinnest layers. All findings reported here are of particular relevance for studies aiming at the demonstration of N\'{e}el vector switching and detection in this noncentrosymmetric antiferromagnet, which have been recently proposed.

cond-mat.mtrl-sci↗

arXiv2020

Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN

In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3$c$ positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30\%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450\,K to 500\,K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.

cond-mat.mtrl-sci↗

arXiv2020

Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn$^{3+}$ ions in GaN

A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In order to obtain the description of magnetization in (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn$^{3+}$ ion in GaN by considering pairs, triplets and quartets of Mn$^{3+}$ ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of the uniaxial anisotropy field, change as the number of magnetic Mn$^{3+}$ ions in a given cluster increases from 1 to 4. Our simulations are then exploited in explaining experimental magnetic properties of Ga$_{1-x}$Mn$_x$N with $x \cong 0.03$, where the presence of small magnetic clusters gains in significance. As a result the approximate lower and upper limits for the values of exchange couplings between Mn$^{3+}$ ions in GaN, being in nearest neighbors $J_{\mathrm{nn}}$ and next nearest neighbors $J_{\mathrm{nnn}}$ positions, respectively, are established.

cond-mat.mtrl-sci↗

arXiv2020

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$\delta$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $\gamma$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

cond-mat.mtrl-sci↗

arXiv2019

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.

cond-mat.mtrl-sci↗

arXiv2018

Magnetotransport in phase-separated (Ga,Fe)N with $\gamma$'-Ga$_y$Fe$_{4-y}$N nanocrystals

The magnetotransport in phase-separated (Ga,Fe)N containing $\gamma$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $\gamma$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.

cond-mat.mtrl-sci↗

arXiv2017

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the thickness of the depletion layer is negligibly small. For x > 0.1% the Fermi level is located about 1.25 - 1.55 eV above the valence band, that is very close to, but visibly below the Mn-related Mn2+/Mn3+ impurity band. The accumulated data allows us to estimate the Mn-related band offsets at the (Ga,Mn)N/GaN interface. It is found that most of the band gap change in (Ga,Mn)N takes place in the valence band on the absolute scale and amounts to -0.028+-0.008 eV/% Mn. The strong Fermi level pinning in the middle of the band gap, no carrier conductivity within the Mn-related impurity band, and a good homogeneity enable a novel functionality of (Ga,Mn)N as a semi-insulating buffer layers for applications in GaN-based heterostuctures.

cond-mat.mtrl-sci↗

arXiv2017

Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties

(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a proper selection/choice of both the core and outer shell materials.

cond-mat.mtrl-sci↗

arXiv2016

Stretching magnetism with an electric field in a nitride semiconductor

By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that Mn doping turns GaN into a worthwhile semi-insulating material. Under these conditions, the magnetoelectric coupling may be driven by the inverse piezoelectric effect that stretches the elementary cell along the c axis and, thus, affects the magnitude of magnetic anisotropy. We develop a corresponding theory and show that it describes the experimentally determined dependence of magnetization on the electric field quantitatively with no adjustable parameters as a function of the magnetic field and temperature. In this way, our work bridges two research domains developed so far independently: piezoelectricity of wurtzite semiconductors and electrical control of magnetization in hybrid and composite magnetic structures containing piezoelectric components.

cond-mat.mtrl-sci↗