arXiv subjects

K. Eng

Publications and source records attributed to K. Eng.

14 recordsLinked to original sources

arXiv2020

Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits

We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.

quant-ph↗

arXiv2018

Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots

We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.

quant-ph↗

arXiv2015

Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation

We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of five in comparison to operation near a charge-state anti-crossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations.

quant-ph↗

arXiv2011

Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.

cond-mat.mtrl-sci↗

arXiv2010

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.

cond-mat.mes-hall↗

arXiv2010

Modeling of Circuits with Strongly Temperature Dependent Thermal Conductivities for Cryogenic CMOS

When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating effects of a CMOS ring oscillator and current comparator at T=4.2K. In two cases, the temperature near the circuit was measured with an integrated thermometer. A lumped element equivalent electrical circuit SPICE model that accounts for the strongly temperature dependent thermal conductivities and special 4.2K heat sinking considerations was developed. The temperature dependence on power is solved numerically with a SPICE package, and the results are within 20% of the measured values for local heating ranging from <1K to over 100K.

cond-mat.mtrl-sci↗

arXiv2010

Compact Modeling of 0.35 micron SOI CMOS Technology Node for 4 K DC Operation using Verilog-A

Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with the standard BSIM model set. The Verilog-A approach also allows the embedding of nonlinear length, width and bias effects into BSIM calculated curves beyond those that can be achieved by the use of different BSIM parameter sets. Nonlinear dependences are necessary to capture effects particular to 4 K behavior, such as current kinks. The 4 K DC behavior is reproduced well by the compact model and the model seamlessly evolves during simulation of circuits and systems as the simulator encounters SOI MOSFETs with different lengths and widths. The incorporation of various length/width and bias dependent effects into one Verilog-A / BSIM4 library, therefore, produces one model for all sets of devices for this technology node.

cond-mat.mtrl-sci↗

arXiv2009

Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho_{xx} displays strong temperature dependence for 0.07 < T < 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi liquid theory, but a small residual drag as T->0 remains unexplained.

cond-mat.mes-hall↗

arXiv2009

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.

cond-mat.mes-hall↗

arXiv2009

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.

cond-mat.mes-hall↗

arXiv2009

The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET

By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density-dependent conductivity vanishes as $σ(n) \propto (n - n_p)^p$, with the exponent $p \sim 1.2$ being consistent with a percolation transition. The `metallic' behavior of $σ(T)$ for $n > n_p$ is shown to be well-described by a semi-classical Boltzmann theory, and we observe the standard weak localization-induced negative magnetoresistance behavior, as expected in a normal Fermi liquid, in the metallic phase.

cond-mat.mes-hall↗

arXiv2007

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.

cond-mat.mes-hall↗

arXiv2005

High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron system on a hydrogen-passivated Si(111) surface. This vacuum cavity preserves the ambient sensitive surface and is created via room temperature contact bonding of two Si substrates. Hall measurements are made on the H-Si(111) surface prepared in aqueous ammonium fluoride solution. We obtain electron densities up to $6.5 \times 10^{11}$ cm$^{-2}$ and peak mobilities of $\sim 8000$ cm$^{2}$/V s at 4.2 K.

cond-mat.mes-hall↗

arXiv2000

Effects of a parallel magnetic field on the novel metallic behavior in two dimensions

Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as σ(n_s,T,B=0)=σ(n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in σwith increasing B, followed by a much weaker σ(B). At higher n_s, the initial drop of MC is less pronounced.

cond-mat.str-el↗