arXiv subjects

Junyang Tan

Publications and source records attributed to Junyang Tan.

12 recordsLinked to original sources

arXiv2025

Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS$_2$ Growth

Preparation of high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the precondition for realizing their applications. However, the synthesized 2D TMDCs (e.g., MoS$_2$) crystals suffer from low quality due to the massive defects formed during the growth. Here, we report the single-atom sulfur (S1) as a highly reactive sulfur species to grow ultrahigh-quality monolayer MoS$_2$. Derived from battery waste, the sulfurized polyacrylonitrile (SPAN) is found to be exclusive and efficient in releasing S1. The monolayer MoS$_2$ prepared by SPAN exhibits an ultralow defect density of $~7\times 10^{12}$ cm$^{-2}$ and the narrowest photoluminescence (PL) emission peak with full-width at half-maximum of ~47.11 meV at room temperature. Moreover, the statistical resonance Raman and low-temperature PL results further verify the significantly lower defect density and higher optical quality of SPAN-grown MoS$_2$ than the conventional S-powder-grown samples. This work provides an effective approach for preparing ultrahigh-quality 2D single crystals, facilitating their industrial applications.

cond-mat.mtrl-sci↗

arXiv2025

Cu Intercalation-stabilized 1T'-MoS2 with Electrical Insulating Behavior

The intercalated two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much attention for their designable structure and novel properties. Among this family, host materials with low symmetry such as 1T' phase TMDCs are particularly interesting because of their potentials in inducing unconventional phenomena. However, such systems typically have low quality and poor stability, hindering further study in the structure-property relationship and applications. In this work, we intercalated Cu into 1T' MoS2 with high crystallinity and high thermal stability up to ~300 oC. We identified the distribution and arrangement of Cu intercalators for the first time, and the results show that Cu occupy partial of the tetrahedral interstices aligned with Mo sites. The obtained Cu-1T' MoS2 exhibits an insulating hopping transport behavior with a large temperature coefficient of resistance reaching -4 ~ -2 % K-1. This work broadens the artificial intercalated structure library and promotes structure design and property modulation of layered materials.

cond-mat.mtrl-sci↗

arXiv2022

Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl

In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ~3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blue shift of its out-of-plane A1g peak at ~189 cm-1. Importantly, this A1g peak is absent in monolayer, suggesting that it is a fingerprint to quickly identify monolayer and for the thickness determination of 2D ZrNCl. The back-gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 108. These results suggest the potential of 2D \b{eta}-ZrNCl for electronic applications.

cond-mat.mtrl-sci↗

arXiv2021

Glue-Assisted Grinding Exfoliation of Large-Size 2D Materials for Insulating Thermal Conduction and Large-Current-Density Hydrogen Evolution

Two-dimensional (2D) materials have many promising applications, but their scalable production remains challenging. Herein, we develop a glue-assisted grinding exfoliation (GAGE) method in which the adhesive polymer acts as a glue to massively produce 2D materials with large lateral sizes, high quality, and high yield. Density functional theory simulation shows that the exfoliation mechanism involves the competition between the binding energy of selected polymers and the 2D materials which is larger than the exfoliation energy of the layered materials. Taking h-BN as an example, the GAGE produces 2D h-BN with an average lateral size of 2.18 {\mu}m and thickness of 3.91 nm. The method is also extended to produce various other 2D materials, including graphene, MoS2, Bi2O2Se, vermiculite, and montmorillonite. Two representative applications of thus-produced 2D materials have been demonstrated, including h-BN/polymer composites for insulating thermal conduction and MoS2 electrocatalysts for large-current-density hydrogen evolution, indicating the great potential of massively produced 2D materials.

physics.app-ph↗

arXiv2021

Doping Concentration Modulation in Vanadium Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity remains challenging in 2D materials. Here we report in-situ chemical vapor deposition growth of vanadium (V) doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 at%. The key to regulate the doping concentration lies in the use of appropriate V precursors with different doping abilities, which also generate a large-scale uniform doping effect. Artificial synaptic transistors were fabricated by using the heavily doped MoS2 as the channel material for the first time. Synaptic potentiation, depression and repetitive learning processes are mimicked by the gate-tunable channel conductance change in such transistors with abundant V atoms to trap/detrap electrons. This work shows a feasible method to dope monolayer 2D semiconductors and demonstrates their use in artificial synaptic transistors.

cond-mat.mtrl-sci↗

arXiv2020

Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures

Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. In this review, MSHSs with different structures and dimensionalities are first introduced, followed by several ways to prepare them. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, we give our perspectives about the challenges and future research directions in this emerging field.

physics.app-ph↗

arXiv2020

Growth of Two-dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism

CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.

cond-mat.mtrl-sci↗

arXiv2020

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping

Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ substitutional doping of niobium (Nb) into TMDCs with tunable concentrations during chemical vapour deposition. Taking monolayer WS2 as an example, doping Nb into its lattice leads to bandgap changes in the range 1.98 eV to 1.65 eV. Noteworthy, electrical transport measurements and density functional theory calculations show that the 4d electron orbitals of the Nb dopants contribute to the density of states of Nb-doped WS2 around the Fermi level, resulting in an n to p-type conversion. Nb-doping also reduces the energy barrier of hydrogen absorption in WS2, leading to an improved electrocatalytic hydrogen evolution performance. These results highlight the effectiveness of controlled doping in modulating the electronic structure of TMDCs and their use in electronic related applications.

cond-mat.mtrl-sci↗

arXiv2020

High-Throughput Production of Cheap Mineral-Based 2D Electrocatalysts for High-Current-Density Hydrogen Evolution

The high-throughput scalable production of cheap, efficient and durable electrocatalysts that work well at high current densities demanded by industry is a great challenge for the large-scale implementation of electrochemical technologies. Here we report the production of a 2D MoS2-based ink-type electrocatalyst by a scalable top-down exfoliation technique followed by a simple heat treatment. The catalyst shows a high current density of 1000 mA cm^-2 at an overpotential of 454 mV for the hydrogen evolution reaction (HER) without the need of iR correction, as well as good stability over 24 hours. Using the same method, we have, for the first time, produced a cheap MoS2 mineral-based catalyst and found that it had an excellent performance for high-current-density HER. Noteworthy, production rate of this MoS2-based catalyst is one to two orders of magnitude higher than those previously reported. In addition, the price of the MoS2 mineral is five orders of magnitude lower than commercial Pt catalysts, making the MoS2 mineral-based catalyst cheap, and the ink-type catalyst dispersions can be easily integrated with other technologies for large-scale catalyst electrode preparation. These advantages indicate the huge potentials of this method and mineral-based cheap and abundant natural resources as catalysts in the electrochemical technologies.

physics.app-ph↗

arXiv2020

Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in-situ defect healing with thiol molecules

Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, we propose to use thiol as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2, resulting in high quality MoS2. This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2020

Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

cond-mat.mtrl-sci↗

arXiv2020

Mass Production of Two-Dimensional Materials by Intermediate-Assisted Grinding Exfoliation

The scalable and high-efficiency production of two-dimensional (2D) materials is a prerequisite to their commercial use. Currently, only graphene and graphene oxide can be produced on a ton scale, and the inability to produce other 2D materials on such a large scale hinders their technological applications. Here we report a grinding exfoliation method that uses micro-particles as force intermediates to resolve applied compressive forces into a multitude of small shear forces, inducing the highly-efficient exfoliation of layer materials. The method, referred to as intermediate-assisted grinding exfoliation (iMAGE), can be used for the large-scale production of many 2D materials. As an example, we have exfoliated bulk h-BN into 2D h-BN with large flake sizes, high quality and structural integrity, with a high exfoliation yield of 67%, a high production rate of 0.3 g h-1 and a low energy consumption of 3.01x10^6 J g-1. The production rate and energy consumption are one to two orders of magnitude better than previous results. Besides h-BN, this iMAGE technology has been used to exfoliate various layer materials such as graphite, black phosphorus, transition metal dichalcogenides, and metal oxides, proving its universality. Molybdenite concentrate, a natural low-cost and abundant mineral, was used as a demo for the large-scale exfoliation production of 2D MoS2 flakes. Our work indicates the huge potential of the iMAGE method to produce large amounts of various 2D materials, which paves the way for their commercial application.

physics.app-ph↗