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Junfeng Zhang

Publications and source records attributed to Junfeng Zhang.

21 records · Page 2Linked to original sources

LEARN: Learned Experts' Assessment-based Reconstruction Network for Sparse-data CT

Compressive sensing (CS) has proved effective for tomographic reconstruction from sparsely collected data or under-sampled measurements, which are practically important for few-view CT, tomosynthesis, interior tomography, and so on. To perform sparse-data CT, the iterative reconstruction commonly use regularizers in the CS framework. Currently, how to choose the parameters adaptively for regularization is a major open problem. In this paper, inspired by the idea of machine learning especially deep learning, we unfold a state-of-the-art "fields of experts" based iterative reconstruction scheme up to a number of iterations for data-driven training, construct a Learned Experts' Assessment-based Reconstruction Network ("LEARN") for sparse-data CT, and demonstrate the feasibility and merits of our LEARN network. The experimental results with our proposed LEARN network produces a competitive performance with the well-known Mayo Clinic Low-Dose Challenge Dataset relative to several state-of-the-art methods, in terms of artifact reduction, feature preservation, and computational speed. This is consistent to our insight that because all the regularization terms and parameters used in the iterative reconstruction are now learned from the training data, our LEARN network utilizes application-oriented knowledge more effectively and recovers underlying images more favorably than competing algorithms. Also, the number of layers in the LEARN network is only 12, reducing the computational complexity of typical iterative algorithms by orders of magnitude.

physics.med-ph↗

Quantum oscillation in carrier transport in two-dimensional junctions

Two-dimensional (2D) device structures have recently attracted considerable attention. Here, we show that most 2D device structures, regardless vertical or lateral, act as a lateral monolayer-bilayer-monolayer junction in their operation. In particular, a vertical structure cannot function as a vertical junction as having been widely believed in the literature. Moreover, due to a larger electrostatic screening, the bilayer region in the junction always has a smaller band gap than its monolayer counterpart. As a result, a potential well, aside from the usual potential barrier, will form universally in the bilayer region to affect the hole or electron quantum transport in the form of transmission or reflection. Taking black phosphorus as an example, we show that an oscillation in the transmission coefficient can be clearly resolved in a two-electrode prototypical device by non-equilibrium Green function combined with density functional theory calculations and the results can be qualitatively understood using a simple quantum well model. The presence of the quantum well is vital to 2D device design, including the effective tuning of quantum transmission by a vertical electric field.

cond-mat.mes-hall↗

Band alignment of two-dimensional lateral heterostructures

Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky-Mott limits for semiconductor-metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.

physics.comp-ph↗