arXiv subjects

Jonathan Baugh

Publications and source records attributed to Jonathan Baugh.

At least 19 recordsLinked to original sources

arXiv2026

Localized orbitals and tunnel couplings from general confinement potentials in gate-defined quantum-dot arrays

Efficient simulation of dense gate-defined multi-quantum-dot arrays requires accurate and scalable modeling methods, compatible with asymmetries and imperfections of realistic voltage-controlled confinement potentials. We present a numerical localization procedure that rotates the eigenbasis of a general one-particle effective orbital Hamiltonian into $s$-, $p$-, $d$-, $\ldots$-shells of localized orbital wavefunctions associated with individual quantum dots. The pairwise tunnel couplings between such states are computed directly as matrix elements of the Hamiltonian. We demonstrate this procedure on a 2D triangular Si-MOS triple-quantum-dot array by obtaining the voltage dependencies of the tunnel couplings and their distributions in the presence of disorder. We discuss the implications of this evaluation method on the many-body calculations, and relate it to the experimental tunnel coupling measurements.

cond-mat.mes-hall↗

arXiv2026

Impact of gate-voltage noise on silicon spin-qubit variational quantum eigensolvers

Quantum computers offer a route to outperform classical methods in tasks such as molecular simulation, motivating hybrid algorithms like the Variational Quantum Eigensolver (VQE) for near-term devices. Silicon spin qubits are a promising platform for scalable quantum computation, but their performance is limited by hardware imperfections -- most notably charge-noise-induced potential fluctuations and static miscalibration of gate-electrode voltages -- which degrade quantum gate fidelities and, ultimately, algorithmic accuracy. Here we develop a hardware-algorithm co-simulation framework for silicon quantum-dot processors that links 3D electrostatics to effective $g$-factors and exchange couplings, and propagates voltage-level noise through realistic control pulses. Using VQE for $\mathrm{H}_2$ ground-state energy estimation as a circuit-level testbed, we study both static scaling/offset errors on the gate-electrode voltages and stochastic fluctuations modeled as random-telegraph noise with tunable amplitudes and switching times. At the gate level, we show that exchange-based two-qubit gates are roughly an order of magnitude more sensitive to these types of noise than ESR-driven single-qubit rotations. Quantum process tomography and Kraus-operator analysis further distinguish coherent and incoherent contributions and quantify the fraction of error that is, in principle, correctable by a compensating unitary. Embedding these noise models into the VQE circuit, we identify regimes of miscalibration strength and noise switching time compatible with chemically accurate energy estimates, and discuss how statistical post-processing based on the full distribution of noisy energy estimates could further improve accuracy.

quant-ph↗

arXiv2025

Automated tuning and characterization of single-electron and single-hole transistor charge sensors

We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown, identifies a working point in barrier-gate space, and selects and ranks charge-sensing operating points. It further automates the acquisition and analysis of Coulomb diamonds to extract sensor-relevant parameters, including lever arm, charging energy, gate and source/drain capacitances, and estimated dot radius. We demonstrate the protocol on accumulation-mode silicon MOS SET and SHT devices operated at 1.5 K and $\approx 50$ mK, respectively, establishing ambipolar applicability across a wide temperature range. Operation at 1.5 K indicates that charge sensing in compact MOS devices is feasible in the 1-2 K regime, supporting higher-temperature readout relevant to scalable spin-qubit architectures. Compared to manual tuning, automation reduces operator overhead and provides consistent device characterization, with clear pathways for further speedups and improved robustness via faster electronics and feedback-based stabilization.

cond-mat.mes-hall↗

arXiv2024

On the microscopics of proximity effects in one-dimensional superconducting hybrid systems

Investigating the microscopic details of the proximity effect is crucial for both key experimental applications and fundamental inquiries into nanoscale devices featuring superconducting elements. In this work, we develop a framework motivated by experiments to study induced superconducting correlations in hybrid nanoscale devices featuring layered superconductor-normal heterostructures using the Keldysh non-equilibrium Green's functions. Following a detailed method for analyzing the induced pair amplitude in a prototypical one-dimensional hybrid, we provide insights into the proximity effect within and outside the Andreev approximation. Our analysis also uncovers a disorder-induced crossover in the correlation patterns of the system. By elucidating the spectral distribution of the induced pair amplitude, we investigate the pair correlations established in a recent experiment [Phys.Rev.Lett.128,127701], providing a theoretical basis for the enhanced Cooper pair injection demonstrated through the lens of the induced pair correlations, thereby establishing the promise of our methods in guiding new experiments in hybrid quantum devices.

cond-mat.mes-hall↗

arXiv2024

Electron Phase Detection in Single Molecules by Interferometry

Interferometry has underpinned a century of discoveries, ranging from the disproval of the ether theory to the detection of gravitational waves, offering insights into wave dynamics with unrivalled precision through the measurement of phase relationships. In electronics, phase-sensitive measurements can probe the nature of transmissive topological and quantum states, but are only possible using complex device structures in magnetic fields. Here we demonstrate electronic interferometry in a single-molecule device through the study of non-equilibrium Fano resonances. We show the phase difference between an electronic orbital and a coupled Fabry-Perot resonance are tuneable through electric fields, and consequently it is possible to read out quantum information in the smallest devices, offering new avenues for the coherent manipulation down to single molecules.

physics.chem-ph↗

arXiv2024

Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals

Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation to improve NIR photodetection, aiming to surpass the performance of established III-V semiconductor p-i-n (PIN) junction technology. These platforms include in situ-grown inorganic nanocrystals and nanowire arrays, as well as hybrid organic-inorganic materials such as graphene-perovskite heterostructures. However, challenges remain in nanocrystal and nanowire growth, large-area fabrication of high-quality 2D materials, and the fabrication of devices for practical applications. Here, we explore the potential for tailored semiconductor nanocrystals to enhance the responsivity of planar metal-semiconductor-metal (MSM) photodetectors. MSM technology offers ease of fabrication and fast response times compared to PIN detectors. We observe enhancement of the optical-to-electric conversion efficiency by up to a factor of ~2.5 through the application of plasmonically-active semiconductor nanorods and nanocrystals. We present a protocol for synthesizing and rapidly testing the performance of non-stoichiometric tungsten oxide (WO$_{3-x}$) nanorods and cesium-doped tungsten oxide (Cs$_y$WO$_{3-x}$) hexagonal nanoprisms prepared in colloidal suspensions and drop-cast onto photodetector surfaces. The results demonstrate the potential for a cost-effective and scalable method exploiting tailored nanocrystals to improve the performance of NIR optoelectronic devices.

physics.app-ph↗

arXiv2024

Quantum optimal control robust to $1/f^\alpha$ noises using fractional calculus: voltage-controlled exchange in semiconductor spin qubits

Low-frequency $1/f^\alpha$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. When stationary charge noise is the dominant source of gate infidelity, we derive that the optimal exchange pulse is long and weak, with the broad shape of the symmetric beta distribution function with parameter $1-\alpha/2$. The common practice of making exchange pulses fast and high-amplitude still remains beneficial in the case of strongly nonstationary noise dynamics, modeled as fractional Brownian motion. The proposed methods are applicable to the characterization and optimization of quantum gate operations in various voltage-controlled qubit architectures.

quant-ph↗

arXiv2024

Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for developing scalable spin qubit quantum processors.

cond-mat.mes-hall↗

arXiv2024

Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots

We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the presence of the global oscillating field, and a Control-Phase operation with the simultaneous control of g-factors and exchange couplings. We outline how to generalize the control scheme to multiqubit gate operations and the case of constrained or imperfect control of the Hamiltonian parameters.

quant-ph↗

arXiv2023

Stable electroluminescence in ambipolar dopant-free lateral p-n junctions

Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence.

cond-mat.mes-hall↗

arXiv2023

Quantum Interference Enhances the Performance of Single-Molecule Transistors

An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics.

physics.chem-ph↗

arXiv2022

Phase-Coherent Charge Transport through a Porphyrin Nanoribbon

Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmission remains phase coherent in molecular porphyrin nanoribbons, synthesized with perfectly defined geometry, connected to graphene electrodes. The device acts as a graphene Fabry-P\'erot interferometer, allowing direct probing of the transport mechanisms throughout several regimes, including the Kondo one. Electrostatic gating allows measurement of the molecular conductance in multiple molecular oxidation states, demonstrating a thousand-fold increase of the current by interference, and unravelling molecular and graphene transport pathways. These results demonstrate a platform for the use of interferometric effects in single-molecule junctions, opening up new avenues for studying quantum coherence in molecular electronic and spintronic devices.

cond-mat.mes-hall↗

arXiv2022

Charge-state dependent vibrational relaxation in a single-molecule junction

The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential transport via a non-equilibrium vibrational distribution. We demonstrate this is possible only when the vibrational dissipation is slow relative to sequential tunneling rates, and obtain a lower bound for the vibrational relaxation time of 8 ns, a value that is dependent on the molecular charge state.

cond-mat.mes-hall↗

arXiv2021

Observation and manipulation of a phase separated state in a charge density wave material

The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the nearly commensurate (NC) to commensurate (C) transition. We perform scanning tunneling microscopy on exfoliated ultrathin flakes of 1T-TaS$_\textrm{2}$ within the NC-C hysteresis window, finding evidence that the observed non-equilibrium phases consist of intertwined, irregularly shaped NC-like and C-like domains. After applying lateral electrical signals to the sample we image changes in the geometric arrangement of the different regions. We use a phase separation model to explore the relationship between electronic inhomogeneity present in ultrathin 1T-TaS$_\textrm{2}$ and its bulk resistivity. These results demonstrate the role of phase competition morphologies in determining the properties of 2D materials.

cond-mat.mes-hall↗

arXiv2021

Single-electron transport in a molecular Hubbard dimer

Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us to study the role of electron-electron interactions in the transport setting. In particular, we empirically determine the molecule's on-site and inter-site electron-electron repulsion energies, which are in good agreement with density functional calculations, and establish the molecular electronic structure within various charge states. The gate-dependent rectification behavior is used to further confirm the selection rules and state degeneracies resulting from the Hubbard model. We therefore demonstrate that current flow through the molecule is governed by a non-trivial set of vibrationally coupled electronic transitions between various many-body states, and experimentally confirm the importance of electron-electron interactions in single-molecule devices.

cond-mat.mes-hall↗

arXiv2021

Role of dephasing on the conductance signatures of Majorana zero modes

Conductance signatures that signal the presence of Majorana zero modes in a three terminal nanowire-topological superconductor hybrid system are analyzed in detail, in both the clean nanowire limit and in the presence of non-coherent dephasing interactions. In the coherent transport regime for a clean wire, we point out contributions of the local Andreev reflection and the non-local transmissions toward the total conductance lineshapes while clarifying the role of contact broadening on the Majorana conductance lineshapes at the magnetic field parity crossings. Interestingly, at larger $B$-field parity crossings, the contribution of the Andreev reflection process decreases which is compensated by the non-local processes in order to maintain the conductance quantum regardless of contact coupling strength. In the non-coherent transport regime, we include dephasing that is introduced by momentum randomization processes, that allows one to smoothly transition to the diffusive limit. Here, as expected, we note that while the Majorana character of the zero modes is unchanged, there is a reduction in the conductance peak magnitude that scales with the strength of the impurity scattering potentials. Important distinctions between the effect of non-coherent dephasing processes and contact-induced tunnel broadenings in the coherent regime on the conductance lineshapes are elucidated. Most importantly our results reveal that the addition of dephasing in the set up does not lead to any notable length dependence to the conductance of the zero modes, contrary to what one would expect in a gradual transition to the diffusive limit. We believe this work paves a way for a systematic introduction of scattering processes into the realistic modeling of Majorana nanowire hybrid devices and assessing topological signatures in such systems in the presence of non-coherent scattering processes.

cond-mat.mes-hall↗

arXiv2020

Optimizing lateral quantum dot geometries for reduced exchange noise

For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise.

cond-mat.mes-hall↗

arXiv2020

Roadmap for gallium arsenide spin qubits

Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.

cond-mat.mes-hall↗