arXiv Science⌕ Search

arXiv subjects

Jizhong Li

Publications and source records attributed to Jizhong Li.

3 recordsLinked to original sources

Explicit Language Memory for Long-Horizon Planning in Vision-Language-Action Models

Vision-language-action (VLA) models provide a unified paradigm for connecting visual perception, language understanding, and robotic control. However, existing VLA models still face major challenges in long-horizon tasks: sparse expert demonstrations constrain cross-task compositional generalization; the non-Markovian nature of long-horizon tasks makes it difficult for policies conditioned only on current observations to maintain temporal consistency; limited closed-loop error correction allows execution errors to accumulate; and end-to-end action fine-tuning may weaken the high-level semantic representations of vision-language model (VLM) backbones. To address these issues, we propose a hierarchical long-horizon VLA architecture with an explicit language-memory module. The central idea is to convert discrete temporal observations into a coherent textual memory sequence with temporal logic. The system is decoupled into a high-level VLM and a low-level VLA: the high-level VLM performs semantic reasoning through a visual question answering training paradigm, while the low-level VLA executes precise continuous control conditioned on subtask instructions and visual observations. The high-level VLM recursively updates both language memory and subtask instructions using the previous memory as a contextual anchor, enabling persistent temporal tracking and dynamic correction during long-horizon execution. We evaluate the proposed method in multiple simulation environments and conduct sim-to-real experiments on a real robotic platform. The results demonstrate that explicit language memory improves the success rate and robustness of VLA models on complex long-horizon tasks while providing an interpretable semantic account of the decision process.

cs.RO↗

LowAux-RDNet: Low-Pass Residual Supervision with Scene-Balanced Real-World Training for Single-Image Reflection Removal

Single-image reflection removal aims to recover a clean transmission layer from one image captured through glass. We study an explicit decomposition pipeline built on RDNet and introduce LowAux, a training-only low-pass reflection auxiliary objective. The original residual target remains the main reflection supervision, while symmetrically filtered prediction and target provide a stable low-frequency constraint. We further incorporate scene-balanced real pairs from RRW to broaden real-scene coverage and improve cross-dataset generalization. To avoid evaluation discrepancies caused by model-specific resizing, padding, output quantization, and metric code, we build a unified public benchmark over CEILNet, Real20, Postcard, Objects, and Wild. Under the same evaluator, the proposed system obtains a five-dataset macro average of 27.546 dB PSNR, 0.9220 SSIM, 0.9751 NCC, and 0.004760 LMSE, achieving the highest macro-average PSNR, SSIM, and NCC and the lowest LMSE among the compared public checkpoints and internal variants. Per-dataset and qualitative analyses show that the main benefit is a more balanced performance across diverse reflection distributions, while clear semantic reflections in Postcard remain challenging.

cs.CV↗

Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping

High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase domain formation is significantly reduced in GaAs on ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge substrates ranges from 10^5 to 6 x 10^6 cm^(-2). These results paved the way for future VCSEL growth and fabrication on these ART-Ge substrates and also confirm that virtual Ge substrates via ART technique are effective Si platforms for optoelectronic integrated circuits.

cond-mat.mtrl-sci↗