1D Interface-Induced Real-Space Berry Curvature Gradient Encoded in SpinValley-Coupled Nonlinear Photocurrent in Lateral Heterostructure
Symmetry breaking enables helicity-dependent optoelectronic responses in quantum materials. In two-dimensional transition-metal dichalcogenides (TMDs), circular photocurrent (CPC) is typically observed under oblique illumination via the circular photon drag effect, while realization of the intrinsic circular photogalvanic effect (CPGE) under normal incidence remains challenging. Here, we report a clear signature of CPGE in chemical vapor deposition-grown monolayer 2D lateral heterostructure (LHS). By probing the nonlocal photocurrent across the 1D hetero-interface, we observe a helicity-dependent photocurrent consistent with a spin-valley-coupled CPGE-dominated mechanism driven by interface-induced Berry-curvature asymmetry, i.e., Berry curvature dipole. Spatially and spectrally resolved measurements under selective excitation of the MoSe2, WSe2, and the interface regions exhibit distinct magnitudes and polarities of the CPG responses. These contrasting behaviors highlight the opposite spin-valley dichroism for MoSe2 and WSe2, as well as enhanced valley mixing at the 1D interface. Our findings establish LHS as a robust platform for realizing a hetero-interface-induced CPGE-like response and highlight its potential for valleytronics and optospintronics.