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Jing-Wei Dong

Publications and source records attributed to Jing-Wei Dong.

2 recordsLinked to original sources

Observation of Kondo Effect in Rhombohedral Graphene Superlattices

Kondo effect in strongly correlated systems arises from the antiferromagnetic coupling between itinerant conduction electrons and localized magnetic moments, giving rise to a variety of exotic quantum phenomena. Two-dimensional moiré superlattice systems provide a highly tunable platform featuring topological flat bands, where Wannier orbitals are spatially confined by the periodic moiré potential and serve as localized magnetic moments, enabling the observable Kondo effect. Here we experimentally demonstrate Kondo interactions in hexalayer rhombohedral graphene moiré superlattices through magneto-transport and temperature-dependent measurements. With increasing magnetic field, the magnetoresistance exhibits an increase-decrease transition across a critical field B_c, while the Hall resistance R_xy undergoes a sign reversal near B_c. Moreover, as temperature decreases, the longitudinal resistance R_xx first increases logarithmically and then decreases following a T^2 behavior, indicating a transition to heavy fermion liquid. These behaviors can be consistently explained by the breakdown of Kondo singlets induced by either magnetic field or temperature, which liberates carriers previously bound to localized moments, thereby enhancing conductivity and altering the dominant carrier type. Furthermore, our results demonstrate that the Kondo interaction can be continuously tuned by both carrier density n and displacement electric field D, and suggest the emergence of a Kondo insulating state. Our findings provide deep insight into the Kondo effect in moiré engineered flat-band systems, paving the path for exploring exotic correlated quantum phases.

cond-mat.mes-hall

Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets

We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1$T$-phase VSe$_2$ nanosheets, synthesized using chemical vapor deposition (CVD). The nanosheets exhibit a charge density wave (CDW) transition at $\sim$77 K. Detailed angle-resolved and temperature-dependent measurements reveal a strong cubic relationship between the third-harmonic Hall voltage $V_{3ω}^\perp$ and the bias current $I_ω$, persisting up to room temperature. Notably, the third-order NLHE demonstrates a twofold angular dependence and significant enhancement below the CDW transition temperature, indicative of threefold symmetry breaking in the CDW phase. Scaling analysis suggests that the intrinsic contribution from the Berry connection polarizability tensor is substantially increased in the CDW phase, while extrinsic effects dominate at higher temperatures. Our findings highlight the critical role of CDW-induced symmetry breaking in modulating quantum geometric properties and nonlinear transport phenomena in VSe$_2$, paving the way for future explorations in low-dimensional quantum materials.

cond-mat.mes-hall