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Jinchi Han

Publications and source records attributed to Jinchi Han.

3 recordsLinked to original sources

Terahertz Field-Induced Reemergence of Quenched Photoluminescence in Quantum Dots

Continuous and concerted development of colloidal quantum-dot light-emitting diodes over the past two decades has established them as a bedrock technology for the next generation of displays. However, a fundamental issue that limits the performance of these devices is the quenching of photoluminescence due to excess charges from conductive charge transport layers. Although device designs have leveraged various workarounds, doing so often comes at the cost of limiting efficient charge injection. Here we demonstrate that high-field terahertz (THz) pulses can dramatically brighten quenched QDs on metallic surfaces, an effect which persists for minutes after THz irradiation. This phenomenon is attributed to the ability of the THz field to remove excess charges, thereby reducing trion and non-radiative Auger recombination. Our findings show that THz technologies can be used to suppress and control such undesired non-radiative decay, potentially in a variety of luminescent materials for future device applications.

cond-mat.mes-hall

Precise Fabrication of Uniform Molecular Gaps for Active Nanoscale Devices

Molecules with versatile functionalities and well-defined structures, can serve as building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here, we present a hybrid fabrication approach enabling uniform molecular gaps. Template-stripped lithographically-patterned gold electrodes with sub-nanometer roughness are used as the bottom contacts upon which the molecular layer is formed through self-assembly. The top contacts are assembled using dielectrophoretic trapping of colloidal gold nanorods, resulting in uniform sub-5 nm junctions. In these electrically-active designs, we further explore the possibility of mechanical tunability. The presence of molecules may help control sub-nanometer mechanical modulation which is conventionally difficult to achieve due to instabilities caused by surface adhesive forces. Our approach is versatile, providing a platform to develop and study active molecular gaps towards functional nanodevices.

physics.app-ph

Intrinsic 1T' phase induced in atomically thin 2H-MoTe$_2$ by a single terahertz pulse

Polymorphic transitions in layered transition metal dichalcogenides provide an excellent platform for discovering exotic phenomena associated with metastable states, ranging from topological phase transitions to enhanced superconductivity. In particular, the transition from 2H to 1T'-MoTe$_2$, which was thought to be induced by high-energy photon irradiation among many other means, has been intensely studied for its technological relevance in nanoscale transistors. Despite the remarkable electrical performance arising from this 2H-to-1T' transition, it remains controversial whether a crystalline 1T' phase is produced because optical signatures of this putative transition are found to be associated with the formation of elemental Te clusters instead. Here, we demonstrate the creation of an intrinsic 1T' lattice after irradiating a mono- or few-layer 2H-MoTe$_2$ with a single field-enhanced terahertz pulse, whose low photon energy limits possible structural damage by optical pulses. To visualize the temporal evolution of this irreversible transition, we further develop a single-shot terahertz pump-second harmonic probe technique, and we find that the transition out of the 2H phase occurs within 10 ns after photoexcitation. Our results not only resolve the long-standing debate over the light-induced polymorphic transition in MoTe$_2$, they also highlight the unique capability of strong-field terahertz pulses in manipulating the structure of quantum materials.

cond-mat.mes-hall