arXiv subjects

Jihui Yang

Publications and source records attributed to Jihui Yang.

18 recordsLinked to original sources

arXiv2026

LoGIC: Budgeted Context Construction for Node-Level Graph In-Context Learning with Tabular Foundation Models

Tabular foundation models have become powerful graph learners. Systems such as G2T-FM and GraphPFN encode each node as a feature row and make predictions through in-context learning (ICL), with labeled rows serving as the prompt. Current protocols employ the complete training table as context, causing attention to scale quadratically with the labeled pool and introducing preprocessing and memory bottlenecks. We investigate context construction for node-level graph ICL: which labeled nodes and auxiliary unlabeled nodes should constitute the prompt for specified queries. We formulate this allocation in terms of two resources: a labeled-context budget for predictive evidence and an unlabeled-halo budget for adapter message passing without using label capacity. We present LoGIC, which retrieves labeled nodes via structural, feature-based, and coverage channels, shares each context across the queries in a graph-local cluster, incorporates an unlabeled halo for adapter backbones, and chooses the channel and context budget without test labels. Across three backbone configurations drawn from two model families on GraphLand, budgeted contexts maintain locally runnable full-context performance, stay competitive with published large-dataset results, and markedly lower peak memory requirements compared with full-context and whole-graph inference. They further permit frozen graph ICL on million-node graphs without retraining. Our analysis identifies when retrieval channels work best and connects their behavior with graph properties.

cs.LG↗

arXiv2026

Record magnetoresistance, enhanced superconductivity, and fermiology in WTe2

The diverse electronic properties of transition metal chalcogenides can be very sensitive to crystal imperfections. A new crystal growth technique, known as horizontal flux transport, offers a route to improved crystal quality. By refining this technique and applying it to the topological semimetal WTe2, we achieved crystals with an order of magnitude less disorder as determined by electrical transport and scanning tunneling microscopy measurements. At low temperatures these crystals exhibit the largest magnetoresistance reported in a metal. Exfoliated monolayers show quantum oscillations for the first time in the electrostatically doped metallic states, enabling determination of band degeneracies and the valley splitting induced by an electric field. Moreover, they exhibit a gated superconducting dome with a greatly enhanced critical temperature approaching 1.8 K. This advance opens up new avenues for employing WTe2 in topological electronics and gated superconducting devices, and promises comparable breakthroughs with other chalcogenides.

cond-mat.supr-con↗

arXiv2025

Driving the field-free Josephson diode effect using Kagome Mott insulator barriers

Josephson junctions (JJs), devices consisting of two superconductors separated by a barrier, are of great technological importance, being a cornerstone of quantum information processing. Classical understanding of superconductor-insulator-superconductor JJs is that conventional insulator's properties, other than magnetism, do not significantly influence the junction's behavior. However, recent work on quantum material (QM) JJs - using Mott insulator Nb3Br8 - resulted in magnetic field-free non-reciprocal superconductivity, termed the Josephson diode effect (JDE), implying the QM's intrinsic properties can modulate superconductivity in non-trivial ways. To date, the underlying mechanism and dependence of the JDE on correlation strength (U/t) has not been elucidated. Here we fabricate QMJJs using correlated Kagome insulators with varying U/t, Nb3X8 (X=Cl, Br, I), observing a decreasing trend of the field-free JDE with Nb3Cl8 reaching ~48% efficiency, Nb3Br8 ~6%, and Nb3I8 having no discernible JDE, matching the trend of decreasing U/t from Cl to I and suggesting correlation in insulators drives the field-free JDE.

cond-mat.supr-con↗

arXiv2024

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayers. At half filling of the second miniband, we observe spontaneous ferromagnetism and an incipient Chern insulator state. The Chern numbers of the top two moiré flat bands exhibit opposite signs for twist angles above 3.1°, but share the same sign near 2.6°, consistent with theoretical predictions. In the 2.6° device, increasing magnetic field induces a topological phase transition via band crossing between opposite valleys, resulting in an emergent state with Chern number C = -2. Additionally, an insulating state at half filling of the second valley-polarized band suggests a charge-ordered state is favored over the fractional Chern insulator state. These findings lay a foundation for understanding the higher flat Chern bands, crucial for the discovery of non-Abelian fractional Chern insulators.

cond-mat.mes-hall↗

arXiv2024

Absence of $E_{2g}$ nematic instability and dominant $A_{1g}$ response in the kagome metal CsV$_3$Sb$_5$

Ever since the discovery of the charge density wave (CDW) transition in the kagome metal CsV$_3$Sb$_5$, the nature of its symmetry breaking is under intense debate. While evidence suggests that the rotational symmetry is already broken at the CDW transition temperature ($T_{\rm CDW}$), an additional electronic nematic instability well below $T_{\rm CDW}$ has been reported based on the diverging elastoresistivity coefficient in the anisotropic channel ($m_{E_{2g}}$). Verifying the existence of a nematic transition below $T_{\rm CDW}$ is not only critical for establishing the correct description of the CDW order parameter, but also important for understanding low-temperature superconductivity. Here, we report elastoresistivity measurements of CsV$_3$Sb$_5$ using three different techniques probing both isotropic and anisotropic symmetry channels. Contrary to previous reports, we find the anisotropic elastoresistivity coefficient $m_{E_{2g}}$ is temperature-independent, except for a step jump at $T_{\rm CDW}$. The absence of nematic fluctuations is further substantiated by measurements of the elastocaloric effect, which show no enhancement associated with nematic susceptibility. On the other hand, the symmetric elastoresistivity coefficient $m_{A_{1g}}$ increases below $T_{\rm CDW}$, reaching a peak value of 90 at $T^* = 20$ K. Our results strongly indicate that the phase transition at $T^*$ is not nematic in nature and the previously reported diverging elastoresistivity is due to the contamination from the $A_{1g}$ channel.

cond-mat.supr-con↗

arXiv2024

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices.

cond-mat.mes-hall↗

arXiv2024

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.

physics.ins-det↗

arXiv2024

Universal Machine Learning Kohn-Sham Hamiltonian for Materials

While density functional theory (DFT) serves as a prevalent computational approach in electronic structure calculations, its computational demands and scalability limitations persist. Recently, leveraging neural networks to parameterize the Kohn-Sham DFT Hamiltonian has emerged as a promising avenue for accelerating electronic structure computations. Despite advancements, challenges such as the necessity for computing extensive DFT training data to explore each new system and the complexity of establishing accurate ML models for multi-elemental materials still exist. Addressing these hurdles, this study introduces a universal electronic Hamiltonian model trained on Hamiltonian matrices obtained from first-principles DFT calculations of nearly all crystal structures on the Materials Project. We demonstrate its generality in predicting electronic structures across the whole periodic table, including complex multi-elemental systems, solid-state electrolytes, Moiré twisted bilayer heterostructure, and metal-organic frameworks (MOFs). Moreover, we utilize the universal model to conduct high-throughput calculations of electronic structures for crystals in GeNOME datasets, identifying 3,940 crystals with direct band gaps and 5,109 crystals with flat bands. By offering a reliable efficient framework for computing electronic properties, this universal Hamiltonian model lays the groundwork for advancements in diverse fields, such as easily providing a huge data set of electronic structures and also making the materials design across the whole periodic table possible.

physics.comp-ph↗

arXiv2023

Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8

Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb3Cl8 in bulk and few layer flakes using polarized Raman spectroscopy and density functional theory (DFT) analysis to determine the material's vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, 5 of which are A1g modes while the remaining 7 are Eg modes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and FWHM are affected. Raman measurements as a function of excitation wavelength (473-785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperature P3m1 phase to the low-temperature R3m phase. Magneto-Raman measurements carried out at 140 and 2 K between -2 to 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb3Cl8 material which can be further exploited for future applications.

cond-mat.mtrl-sci↗

arXiv2023

Observation of flat and weakly dispersing bands in a van der Waals semiconductor Nb3Br8 with breathing kagome lattice

Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are well explained by the theoretical calculations, which show they have Nb d character indicating their origination from the Nb atoms forming the breathing kagome plane. This van der Waals material can be easily thinned down via mechanical exfoliation to the ultrathin limit and such ultrathin samples are stable as depicted from the time-dependent Raman spectroscopy measurements at room temperature. These results demonstrate that Nb3Br8 is an excellent material not only for studying breathing kagome induced flat band physics and its connection with magnetism, but also for heterostructure fabrication for application purposes.

cond-mat.mes-hall↗

arXiv2023

Pressure-Induced Detour of Li$^+$ Transport during Large-Scale Electroplating of Lithium in High-Energy Lithium Metal Pouch Cells

Externally applied pressure impacts the performance of batteries particularly in those undergoing large volume changes, such as lithium metal batteries. In particular, the Li$^+$ electroplating process in large format pouch cells occurs at a larger dimension compared to those in smaller lab-scale cells. A fundamental linkage between external pressure and large format electroplating of Li$^+$ remains missing but yet critically needed to understand the electrochemical behavior of Li$^+$ in practical batteries. Herein, this work utilizes 350 Wh/kg lithium metal pouch cell as a model system to study the electroplating of Li$^+$ ions and the impact of external pressure. The vertically applied uniaxial pressure on the batteries using liquid electrolyte profoundly affects the electroplating process of Li$^+$ which is well reflected by the self-generated pressures in the cell and can be correlated to battery cycling stability. Taking advantage of both constant gap and pressure application, all Li metal pouch cells demonstrated minimum swelling of 6-8% after 300 cycles, comparable to that of state-of-the-art Li-ion batteries. Along the horizontal directions, the pressure distributed across the surface of Li metal pouch cell reveals a unique phenomenon of Li$^+$ migration during the electroplating (charge) process driven by an uneven distribution of external pressure across the large electrode area, leading to a preferred Li plating in the center area of Li metal anode. This work addresses a longstanding question and provides new fundamental insights on large format electrochemical plating of Li which will inspire more innovations and lead to homogeneous deposition of Li to advance rechargeable lithium metal battery technology.

physics.chem-ph↗

arXiv2022

Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8

Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evidence of at and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of Niobium atoms and have Nb d character. They are found to be sensitive to polarization of the incident photon beam. Our study provides insight into the electronic structure and at band topology in an exfoliable kagome semiconductor thereby providing an important platform to understand the interaction of geometry and electron correlations in 2D material.

cond-mat.mes-hall↗

arXiv2021

Apparatus Design for Measuring of the Strain Dependence of the Seebeck Coefficient of Single Crystals

We present the design and construction of an apparatus that measures the Seebeck coefficient of single crystals under in-situ tunable strain at cryogenic temperatures. A home-built three piezostack apparatus applies uni-axial stress to a single crystalline sample and modulates anisotropic strain up to 0.7%. An alternating heater system and cernox sensor thermometry measures the Seebeck coefficient along the uniaxial stress direction. To demonstrate the efficacy of this apparatus, we applied uniaxial stress to detwin single crystals of BaFe2As2 in the orthorhombic phase. The obtained Seebeck coefficient anisotropy is in good agreement with previous measurements using a mechanical clamp.

cond-mat.str-el↗

arXiv2021

Quadrupling the stored charge by extending the accessible density of states

Nanosized energy storage, energy-harvesting, and functional devices are the three key components for integrated self-power systems. Here, we report on nanoscale electrochemical devices with a nearly three-fold enhanced stored charge under the field effect. We demonstrated the field-effect transistor can not only work as a functional component in nanodevices but also serve as an amplifier for the nanosized energy storage blocks. This unusual increase in energy storage is attributed to having a wide range of accessible electronic density of states (EDOS), hence redox reactions are occurring within the nanowire and not being confined to the surface. Initial results with MoS2 suggest that this field effect modulated energy storage mechanism may also apply to many other redox-active materials. Our work demonstrates the novel application of the field-effect in energy storage devices as a universal strategy to improve ion diffusion and the surface-active ion concentration of the active material, which can greatly enhance the charge storage ability of nanoscale devices. The fabrication process of the field-effect energy storage device is also compatible with microtechnology and can be integrated into other microdevices and nanodevices.

physics.app-ph↗

arXiv2020

Electron-phonon coupling and superconductivity in the doped topological-crystalline insulator (Pb$_{0.5}$Sn$_{0.5}$)$_{1-x}$In$_x$Te

We present a neutron scattering study of phonons in single crystals of (Pb$_{0.5}$Sn$_{0.5}$)$_{1-x}$In$_x$Te with $x=0$ (metallic, but nonsuperconducting) and $x=0.2$ (nonmetallic normal state, but superconducting). We map the phonon dispersions (more completely for $x=0$) and find general consistency with theoretical calculations, except for the transverse and longitudinal optical (TO and LO) modes at the Brillouin zone center. At low temperature, both modes are strongly damped but sit at a finite energy ($\sim4$ meV in both samples), shifting to higher energy at room temperature. These modes are soft due to a proximate structural instability driven by the sensitivity of Pb-Te and Sn-Te $p$-orbital hybridization to off-center displacements of the metal atoms. The impact of the soft optical modes on the low-energy acoustic modes is inferred from the low thermal conductivity, especially at low temperature. Given that the strongest electron-phonon coupling is predicted for the LO mode, which should be similar for both studied compositions, it is intriguing that only the In-doped crystal is superconducting. In addition, we observe elastic diffuse (Huang) scattering that is qualitatively explained by the difference in Pb-Te and Sn-Te bond lengths within the lattice of randomly distributed Pb and Sn sites. We also confirm the presence of anomalous diffuse low-energy atomic vibrations that we speculatively attribute to local fluctuations of individual Pb atoms between off-center sites.

cond-mat.supr-con↗

arXiv2017

Quantitative Nanoscale Mapping of Three-Phase Thermal Conductivities in Filled Skutterudites via Scanning Thermal Microscopy

In the last two decades, a nanostructuring paradigm has been successfully applied in a wide range of thermoelectric materials, resulting in significant reduction in thermal conductivity and superior thermoelectric performance. These advances, however, have been accomplished without directly investigating the local thermoelectric properties, even though local electric current can be mapped with high spatial resolution. In fact, there still lacks an effective method that links the macroscopic thermoelectric performance to the local microstructures and properties. Here, we show that local thermal conductivity can be mapped quantitatively with good accuracy, nanometer resolution, and one-to-one correspondence to the microstructure using a three-phase skutterudite as a model system. Scanning thermal microscopy combined with finite element simulations demonstrate close correlation between sample conductivity and probe resistance, enabling us to distinguish thermal conductivities spanning orders of magnitude, yet resolving thermal variation across a phase interface with small contrast. The technique thus provides a powerful tool to correlate local thermal conductivities, microstructures, and macroscopic properties for nanostructured materials in general, and nanostructured thermoelectrics in particular.

cond-mat.mtrl-sci↗

arXiv2013

A New Multiferroic State with Large Electric Polarization in Tensile Strained TbMnO3

By performing first-principles calculations, we systematically explore the effect of epitaxial strain on the structure and properties of multiferroic TbMnO3. We show that, although the unstrained bulk TbMnO3 displays a non-collinear antiferromagnetic spin order, TbMnO3 can be ferromagnetic under compressive strain, in agreement with the experimental results on TbMnO3 grown on SrTiO3. By increasing the tensile strain up to 5%, we predict that TbMnO3 transforms into a new multiferroic state with a large ferroelectric polarization,two orders of magnitude larger than that in the unstrained bulk, and with a relatively high Neel temperature E-type antiferromagnetic order. We also find that the ferroelectric domain and antiferromagnetic domain are interlocked with each other, thus an external electric field can switch the ferroelectric domain and the antiferromagnetic domain simultaneously. Our work demonstrates that strain engineering can be used to improve the multiferroic properties of TbMnO3.

cond-mat.mtrl-sci↗

arXiv2011

Predicting Two-Dimensional Boron-Carbon Compounds by the Global Optimization Method

We adopt a global optimization method to predict two-dimensional (2D) nanostructures through the particle-swarm optimization (PSO) algorithm. By performing PSO simulations, we predict new stable structures of 2D boron-carbon (B-C) compounds for a wide range of boron concentrations. Our calculations show that: (1) All 2D B-C compounds are metallic except for BC3 which is a magic case where the isolation of carbon six-membered ring by boron atoms results in a semiconducting behavior. (2) For C-rich B-C compounds, the most stable 2D structures can be viewed as boron doped graphene structures, where boron atoms typically form 1D zigzag chains except for BC3 in which boron atoms are uniformly distributed. (3) The most stable 2D structure of BC has alternative carbon and boron ribbons with strong in-between B-C bonds, which possesses a high thermal stability above 2000K. (4) For B-rich 2D B-C compounds, there is a novel planar-tetracoordinate carbon motif with an approximate C2v symmetry.

cond-mat.mtrl-sci↗