arXiv subjects

Jiating Lu

Publications and source records attributed to Jiating Lu.

3 recordsLinked to original sources

arXiv2024

Lattice dynamics and phonon dispersion of van der Waals layered ferromagnet Fe3GaTe2

Despite the tremendous progress in spintronic studies of van der Waals (vdW) room-temperature ferromagnet Fe3GaTe2, much less effort has been spent on its lattice dynamics and possible interaction with spintronic degrees of freedom. In this work, by combining Raman spectroscopy in a wide range of pressure (atmospheric pressure~19.5 GPa) and temperature (80~690 K) with first-principles calculation, we systematically studied the lattice dynamics and phonon dispersion of Fe3GaTe2. Our results show that the phonon energies of Fe3GaTe2 located at 126.0 cm-1 and 143.5 cm-1 originate from the anharmonic and harmonic vibration modes, respectively. Furthermore, the first room-temperature spin-phonon coupling in vdW ferromagnet is observed with strength of ~0.81 cm-1 at 300 K, by identifying Raman anomalies in both phonon energy and full width at half maximum (FWHM) of below Curie temperature of Fe3GaTe2. Our findings are valuable for fundamental and applied studies of vdW materials under variable conditions.

cond-mat.mtrl-sci↗

arXiv2020

High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-doped SiGe Thin Films

Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by radio frequency magnetron sputtering and then crystallized by rapid thermal annealing (RTA). After the RTA, the samples became ferromagnetic (FM) semiconductors, in which the Curie temperature increased with increasing Mn doping concentration and reached 280 K with 5% Mn concentration. The data suggest that the ferromagnetism came from the hole-mediated process and was enhanced by the tensile strain in the SiGe crystals. Meanwhile, the Hall effect measurement up to 33 T to eliminate the influence of anomalous Hall effect (AHE) reveals that the hole mobility of the annealed samples was greatly enhanced and the maximal value was ~1000 cm2/Vs, owing to the tensile strain-induced band structure modulation. The Mn-doped SiGe thin films with high Curie temperature ferromagnetism and high hole mobility may provide a promising platform for semiconductor spintronics.

cond-mat.mtrl-sci↗

arXiv2020

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were investigated using phonon spectra, and an infinite miscibility between Si and Ge elements were revealed in the 2D honeycomb structures. The simulated scanning tunneling microscope images and Raman and infrared active modes of the Si1-xGexM were then obtained for structural characterizations. Interestingly, the study of electronic properties revealed not previously reported oscillatory nonlinear dependence of band gap values on the elementary proportion x in the Si1-xGexM, which suggests an alternative way for tuning the band gaps of 2D materials. Additionally, low effective masses (0.008m0 ~ 0.021m0) of the carriers in the semiconducting Si1-xGexM were found, which has potentials for high-speed applications. Considering the advantage of their compatibility with current Si-based technology and the trend of miniature of electronic devices, the Si1-xGexM with stable structures and excellent properties would be important for 2D applications based on group IV materials.

cond-mat.mtrl-sci↗