arXiv subjects

Jeremiah Croshaw

Publications and source records attributed to Jeremiah Croshaw.

8 recordsLinked to original sources

arXiv2024

Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length

Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1 to 5 dimers were intentionally fabricated and characterised by STM techniques combined with density functional theory to provide detailed insights into geometric and electronic structure. Structural and dynamic qualities displayed by short wires were shown to be similar to the characteristics of a relatively long 37 dimer wire. Rather than adding two states into the band gap, experiment and theory reveal that each dimer adds one empty state into the gap and one filled state into the valence bands. Coupling among these states provides a conduction pathway with small bulk coupling.

cond-mat.mtrl-sci↗

arXiv2023

Atomic Defect-Aware Physical Design of Silicon Dangling Bond Logic on the H-Si(100)2x1 Surface

Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nanometer substrate defects still pose a hindrance to production due to the need for atomic precision. In essence, unpassivated or missing surface atoms, contaminants, and structural deformations disturb the fabricated logic or prevent its realization altogether. Moreover, design automation techniques in this domain have not yet adopted any defect-aware behavior to circumvent the present obstacles. In this paper, we derive a surface defect model for design automation from experimentally verified defect types that we apply to identify sensitivities in an established gate library in an effort to generate more robust designs. Furthermore, we present an automatic placement and routing algorithm that considers scanning tunneling microscope data obtained from physical experiments to lay out dot-accurate circuitry that is resilient against the presence of atomic surface defects. This culminates in a holistic evaluation on surface data of varying defect rates that enables us to quantify the severity of such defects. We project that fabrication capabilities must achieve defect rates of around 0.1 %, if charged defects can be completely eliminated, or < 0.1 %, otherwise. This realization sets the pace for future efforts to scale up this promising circuit technology.

physics.app-ph↗

arXiv2023

Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness

Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of $32\times10^3\,\text{nm}^{2}$ -- orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the $10\,\text{nm}$ scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.

cond-mat.mes-hall↗

arXiv2020

Ionic Charge Distributions in Silicon Atomic Wires

Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at varying energies, we identify the formation of previously unobserved ionic charge distributions correlated to the net charge of DB wires and their predicted lattice distortion. Performing spectroscopic analysis, we identify higher energy configurations corresponding to alternative lattice distortions as well as tip-induced charging effects. By varying the length and orientation of these DB structures, we further highlight key features in the formation of these ionic surface phases.

cond-mat.mtrl-sci↗

arXiv2020

Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM

The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with relatively large areas of the hydrogen terminated 2x1 surface are routinely created using an in-situ methodology, surface defects are inevitably formed as well reducing the area available for patterning. Here, we present a catalog of several commonly found defects of the H-Si(100)-2x1 surface. By using a combination of scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM), we are able to extract useful information regarding the atomic and electronic structure of these defects. This allowed for the confirmation of literature assignments of several commonly found defects, as well as proposed classification of previously unreported and unassigned defects. By better understanding the structure and origin of these defects, we make the first steps toward enabling the creation of superior surfaces ultimately leading to more consistent and reliable fabrication of atom scale devices.

cond-mat.mtrl-sci↗

arXiv2019

Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography

As the development of atom scale devices transitions from novel, proof-of-concept demonstrations to state-of-the-art commercial applications, automated assembly of such devices must be implemented. Here we present an automation method for the identification of defects prior to atomic fabrication via hydrogen lithography using deep learning. We trained a convolutional neural network to locate and differentiate between surface features of the technologically relevant hydrogen-terminated silicon surface imaged using a scanning tunneling microscope. Once the positions and types of surface features are determined, the predefined atomic structures are patterned in a defect-free area. By training the network to differentiate between common defects we are able to avoid charged defects as well as edges of the patterning terraces. Augmentation with previously developed autonomous tip shaping and patterning modules allows for atomic scale lithography with minimal user intervention.

cond-mat.mtrl-sci↗

arXiv2019

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understanding of materials at the atomic scale. Here, we report a versatile scanning tunneling microscope (STM) charge characterization technique, which reduces the influence of the typically perturbative STM tip field, to develop this understanding even further. Using this technique, we can now observe single molecule binding events to atomically defined reactive sites (fabricated on a hydrogen-terminated silicon surface) through electronic detection. We then developed a new error correction tool for automated hydrogen lithography, directing molecular hydrogen binding events using these sites to precisely repassivate surface dangling bonds (without the use of a scanned probe). We additionally incorporated this molecular repassivation technique as the primary rewriting mechanism in new ultra-dense atomic data storage designs (0.88 petabits per in$^{2}$).

cond-mat.mtrl-sci↗

arXiv2019

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highly-doped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor species, we suggest is of a character more consistent with either a negatively charged interstitial hydrogen or a hydrogen vacancy complex.

cond-mat.mtrl-sci↗