arXiv subjects

Jan Kunc

Publications and source records attributed to Jan Kunc.

16 recordsLinked to original sources

arXiv2026

Light-induced effective magnetic fields in Landau quantized graphene

Ultrafast magnetism triggered by circularly polarized radiation underpins ultrafast spin control, relevant to future technologies, e.g., opto-spintronics and magnonics. The dynamics are often complicated and intertwined among correlated subsystems, such as electrons, spins, phonons, plasmons, topology, and lattice, due to many-body quantum coupling at ultrafast timescales. Here, we demonstrate light-induced effective magnetic fields generated by selective excitation between non-equidistant Landau quantized states in graphene, a prototypical Dirac material, using circularly polarized pulses. By magnetically tuning the Landau-level transition resonance away from other low-energy excitations, we obtain a clean electrostatically controllable platform and identify the microscopic origin of the light-induced magnetic signals, independent of sublattice coupling. Because different Landau levels carry distinct optical Hall conductivities, direct modification of their occupancies via optical excitations creates transient Faraday rotation signals with dispersive magnetic-field dependence, mirroring the static magneto-optical lineshape. The induced effective magnetic field normalized by the pump electric field exceeds typical reported values for the inverse Faraday effect of electronic origin. Our results establish a clear microscopic picture of the inverse Faraday effect of electronic origin, which can trigger hierarchical dynamics among correlated sublattices once Landau-level transitions are magnetically tuned to coincide with other low-energy excitations in Dirac systems and related materials.

cond-mat.str-el↗

arXiv2026

Unveiling Davydov-Split Excitons in a Template-Engineered Molecular-Graphene Heterostructure

The realization of high-fidelity organic-inorganic quantum emulators is frequently hindered by the interfacial imperfections introduced during device fabrication. Here, we demonstrate a robust nanofabrication protocol that restores the atomic-scale purity of epitaxial graphene on SiC to UHV-equivalent levels, as confirmed by Low-Energy Electron Diffraction, and Microscopy. This pristine interface enables the emergence of macroscopic excitonic coherence in epitaxial overlayers of 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), a model molecular system characterized by intense electron-phonon coupling. Through a combination of high-sensitivity Fourier Transform Photo-current Spectroscopy, photoluminescence, and dynamic Raman mapping, we resolve a complex vibronic manifold governed by Davydov splitting. We show that the $P6_3/m$ crystalline symmetry of the HMTP overlayer lifts the degeneracy of the HOMO-LUMO transition, creating discrete bright and dark excitonic branches. Using an analytical tight-binding model parameterized by ARPES-derived intermolecular coupling and Raman vibrational modes validated by molecular dynamics simulations, we quantify the polarization energy, the Huang-Rhys factor, and Herzberg-Teller corrections to the Franck-Condon model. Our results reveal that the dark-state branch dominates the radiative channel, following a polaron-mediated relaxation pathway consistent with Kasha's rule. By reconciling macroscopic device architecture with UHV-level surface science, this work establishes a scalable platform for the study of dark-exciton dynamics and the development of solid-state molecular quantum memories.

cond-mat.mes-hall↗

arXiv2026

Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC

Epitaxial growth critically influences structural and electronic properties of organic semiconductors. Graphene serves as a prominent van der Waals template for molecular self-assembly; however, graphene on SiC is intrinsically heterogeneous, with decoupled monolayer graphene coexisting with residuals of a covalently bound buffer layer, which may affect molecular ordering. Here, we track the ordering of the molecular donor, 2,3,6,7,10,11-hexamethoxytriphenylene (HMTP), from the first layer to thin films, combining low-energy electron microscopy and diffraction with X-ray diffraction. HMTP forms highly ordered epitaxial layers on single-layer graphene, whereas growth on the buffer layer initiates as amorphous and evolves into polycrystalline films with weak orientation with respect to the substrate. Crucially, hydrogen intercalation decouples the buffer layer, converting it into quasi-freestanding monolayer graphene and restoring epitaxial growth. These findings demonstrate that interfacial coupling governs molecular epitaxy on graphene/SiC, and interface engineering via hydrogen intercalation provides a scalable route to control organic thin-film crystallinity on graphene.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast Terahertz Photoconductivity and Near-Field Imaging of Nanoscale Inhomogeneities in Multilayer Epitaxial Graphene Nanoribbons

We study broadband terahertz (THz) conductivity and ultrafast photoconductivity spectra in lithographically fabricated multilayer epitaxial graphene nanoribbons grown on C- face of 6H-SiC substrate. THz near-field spectroscopy reveals local conductivity variations across nanoscale structural inhomogeneities such as wrinkles and grain boundaries within the multilayer graphene. Ultrabroadband THz far-field spectroscopy (0.15-16 THz) distinguishes doped graphene layers near the substrate from quasi-neutral layers (QNLs) further from the substrate. Temperature-dependent THz conductivity spectra are dominated by intra-band transitions both in the doped and QNLs. Photoexcitation then alters mainly the response of the QNLs: these exhibit a very high carrier mobility and a large positive THz photoconductivity with picosecond lifetime. The response of QNLs strongly depends on the carrier temperature $T_c$: the scattering time drops by an order of magnitude down to ~10 fs upon an increase of $T_c$ from 50 K to $T_c >$ 1000 K, which is attributed to an enhanced electron-electron and electron-phonon scattering and to an interaction of electrons with mid-gap states.

cond-mat.mtrl-sci↗

arXiv2024

Ultrafast terahertz conductivity in epitaxial graphene nanoribbons: an interplay between photoexcited and secondary hot carriers

Optical pump-terahertz probe spectroscopy has been used to investigate ultrafast photo-induced charge carrier transport in 3.4 $\mu$m wide graphene ribbons upon scaling the optical pump intensity. For low pump fluences, the deposited pump energy is rapidly redistributed through carrier-carrier scattering, producing secondary hot carriers: the picosecond THz photoconductivity then acquires a negative sign and scales linearly with an increasing pump fluence. At higher fluences, there are not enough equilibrium carriers able to accept the deposited energy, directly generated (excess) carriers start to contribute significantly to the photoconductivity with a positive sign leading to its saturation behavior. This leads to a non-monotonic variation of the carrier mobility and plasmonic resonance frequency as a function of the pump fluence and, at high fluences, to a balance between a decreasing carrier scattering time and an increasing Drude weight. In addition, a weak carrier localization observed for the polarization parallel to the ribbons at low pump fluences is progressively lifted upon increasing the pump fluence as a result of the rise of initial carrier temperature.

cond-mat.mtrl-sci↗

arXiv2024

Nanoscale Terahertz Conductivity and Ultrafast Dynamics of Terahertz Plasmons in Periodic Arrays of Epitaxial Graphene Nanoribbons

Dynamics of plasmons in nanoribbons of (hydrogen intercalated) quasi-free-standing single layer graphene is studied by terahertz spectroscopy both in the steady state and upon photoexcitation by an ultrashort near infrared laser pulse. The use of two-dimensional frequency domain analysis of the optical pump - THz probe signals allows us to determine the evolution of carrier temperature and plasmon characteristics with ~100 fs time resolution. Namely, we find that the carrier temperature decreases from more than 5000 K to the lattice temperature within about 7 ps and that during this evolution the carrier mobility remains practically constant. The time-resolved THz conductivity spectra suggest that graphene nanoribbons contain defects which act as low potential barriers causing a weak localization of charges; the potential barriers are overcome upon photoexcitation. Furthermore, the edges of graphene nanoribbons are found to slightly enhance the scattering of carriers. The results are supported by complementary measurements using THz scanning near-field microscopy which confirm a high uniformity of the THz conductivity across the sample and demonstrate high enough sensitivity to resolve even the impact of nanometric terrace steps on SiC substrate under the graphene monolayer.

cond-mat.mtrl-sci↗

arXiv2023

Investigation of internal electric fields in graphene/6H-SiC under illumination by Pockels effect

In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differences of low-intensity polarized light. In the case of the studied 6H-SiC crystal with graphene electrodes, the experiment is significantly affected by birefringence at zero bias voltage applied to the crystal and a strong thermo-optical effect. We dealt with these phenomena by adding a Soleil-Babinet compensator and using considerations based on measurements of crystal heating under laser illumination. The method can be generalized and adapted to any Pockels crystal that can withstand sufficiently high voltages. We demonstrate the significant formation of space charge in semi-insulating 6H-SiC under illumination by above-bandgap light.

physics.optics↗

arXiv2023

Plasmon-plasmon interaction and the role of buffer in epitaxial graphene micro-flakes

We investigate the origin of the translational symmetry breaking in epitaxially grown single-layer graphene. Despite the surface morphology of homogeneous graphene films influenced by the presence of mutually parallel SiC surface terraces, the far-infrared magneto-plasmon absorption is almost independent of the angle between the probing light polarization and the orientation of terraces. Based on a detailed analysis of the plasmon absorption lineshape and its behavior in the magnetic field, supported by confocal Raman mapping and atomic force microscopy, we explain this discrepancy by spontaneously formed graphene micro flakes. We further support our conclusions using data collected on artificially created graphene nanoribbons: we recognize similar plasmon origin in artificial ribbons and naturally formed grains. An unexpectedly large plasmon resonance redshift was observed in nanoribbons. In a hydrogen-intercalated sample (which does not contain the buffer), this redshift is quantitatively taken into account by a plasmon-plasmon interaction. In non-intercalated samples featuring a buffer layer, this redshift is due to an interplay between the plasmon-plasmon coupling and Coulomb screening by the buffer-induced interface states. This model determines the density of interface states in good agreement with experimentally reported values.

cond-mat.mes-hall↗

arXiv2022

Spectral Current Density and Responsivity Scaling for Fourier Transform Photocurrent Spectroscopy

We propose and experimentally verify two methods to scale arbitrary units to photocurrent spectral density (A/eV) in Fourier Transform Photocurrent (FTPC) spectroscopy. We also propose the FTPC scaling to responsivity (A/W), provided a narrow-band optical power measurement is available. The constant background of the interferogram provides a precise determination of the photocurrent spectral density. The second method relies on the scaled amplitude of the interferogram. Although the latter method leads to more significant errors, it still provides good order of magnitude estimates of the total photocurrent. We demonstrate the technique on a calibrated InGaAs diode and weak responsivity SiC interdigital sensors. We identify a series of impurity-band and interband transitions in the SiC sensors.

cond-mat.mtrl-sci↗

arXiv2018

Intercalation of hydrogen in the SiC/epitaxial graphene interface

We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated epitaxial graphene grown on silicon face of SiC. We have used attenuated total reflection geometry to enhance absorption related to the surface and SiC/graphene interface. The samples of epitaxial graphene have been intercalated in the temperature range of 790 to 1250$^\circ$C and compared to the reference samples of hydrogen etched SiC. We have found that although the Si-H bonds form at as low temperatures as 790$^\circ$C, the well developed bond order has been reached only for epitaxial graphene intercalated at temperatures exceeding 1000$^\circ$C. We also show that the hydrogen intercalation degradates on a time scale of few days when samples are stored in ambient air. The optical spectroscopy shows on a formation of vinyl and silyl functional groups on the SiC/graphene interface due to the residual atomic hydrogen left from the intercalation process.

cond-mat.mtrl-sci↗

arXiv2017

Efficient Charge Collection in Coplanar Grid Radiation Detectors

We have modeled laser-induced transient current waveforms in radiation coplanar grid detectors. Poisson's equation has been solved by finite element method and currents induced by photo-generated charge were obtained using Shockley-Ramo theorem. The spectral response on a radiation flux has been modeled by Monte-Carlo simulations. We show 10$\times$ improved spectral resolution of coplanar grid detector using differential signal sensing. We model the current waveform dependence on doping, depletion width, diffusion and detector shielding and their mutual dependence is discussed in terms of detector optimization. The numerical simulations are successfully compared to experimental data and further model simplifications are proposed. The space charge below electrodes and a non-homogeneous electric field on a coplanar grid anode are found to be the dominant contributions to laser-induced transient current waveforms.

physics.ins-det↗

arXiv2017

Effect of residual gas composition on epitaxial graphene growth on SiC

In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content during epitaxial graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial graphene growth. The growth conditions in high vacuum and purified argon are compared. The grown epitaxial graphene is studied by Raman scattering mapping and mechanical strain, charge density, number of graphene layers and graphene grain size are evaluated. Charge density and carrier mobility has been studied by Hall effect measurements in van der Pauw configuration. We have identified a major role of chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show, that according to time varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of water and carbon is discussed to be one of the factors increasing number of defects in graphene. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides more stable and defined growth ambient.

cond-mat.mtrl-sci↗

arXiv2014

Controlled epitaxial graphene growth within amorphous carbon corrals

Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface steps under epitaxial graphene on SiC is an important consideration for graphene device production. We demonstrate lithographically patterned evaporated amorphous carbon corrals as a method to pin SiC surface steps. Evaporated amorphous carbon is an ideal step-flow barrier on SiC due to its chemical compatibility with graphene growth and its structural stability at high temperatures, as well as its patternability. The amorphous carbon is deposited in vacuum on SiC prior to graphene growth. In the graphene furnace at temperatures above 1200$^\circ$C, mobile SiC steps accumulate at these amorphous carbon barriers, forming an aligned step free region for graphene growth at temperatures above 1330$^\circ$C. AFM imaging and Raman spectroscopy support the formation of quality step-free graphene sheets grown on SiC with the step morphology aligned to the carbon grid.

cond-mat.mes-hall↗

arXiv2013

Wafer bonding solution to epitaxial graphene - silicon integration

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.

cond-mat.mtrl-sci↗

arXiv2013

A method to extract pure Raman spectrum of epitaxial graphene on SiC

A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer areas, with the advantage that no prior information on the impulse response functions is needed. We have used this property to characterize the Raman laser beam. The method capability in efficient data smoothing is also demonstrated.

cond-mat.mtrl-sci↗

arXiv2013

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.

cond-mat.mtrl-sci↗