arXiv subjects

Jagadeesh S. Moodera

Publications and source records attributed to Jagadeesh S. Moodera.

At least 19 recordsLinked to original sources

arXiv2026

Vortex Transport in Ni/Bi Bilayer Superconductor with Strong Spin-Orbit and Exchange Interaction

Nickel/bismuth (Ni/Bi) bilayers are a promising platform for exploring unconventional superconductivity. Ferromagnetic Ni is coupled to Bi, a strong spin orbit metal that only becomes superconducting below approx 10 mK, forming a bilayer exhibits superconductivity at a much higher temperatures, a Tc of 3 to 4 K. Such a bilayer thus makes an ideal system to probe Cooper pairing in strong spin orbit coupled magnetic environments. Magneto transport studies near Tc reveal the behavior of vortex dynamics and exchange proximity effects. It is seen that isolated vortices of the bilayers respond sensitively to out of plane fields, producing antisymmetric transverse resistance peaks attributable to competing Magnus and viscous forces. Control experiments using a ferromagnetic insulator confirm that superconductivity extends throughout the bilayer, not just confined at the interface. Overall, the results provide a unified picture of transport dominated by vortex dynamics and show that a conventional s wave order parameter accounts for the observations, with any likely unconventional contributions being only subtle.

cond-mat.supr-con↗

arXiv2026

Proximity Magnetism in Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe Natural Heterostructures

Magnetic topological insulators and their heterostructures provide great opportunities in coupling band topology with nontrivial spin configuration for enhanced spintronic device performance as well as designing totally new magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb)2Te3 stabilizes as self-organized Mn(Bi,Sb)2Te4 septuple lamellae amongst alternating (Bi,Sb)2Te3 quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3 heterostructures that are exchange coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Neel temperature TN of 20 K, Mn(Bi,Sb)2Te4 mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb)2Te3/MnTe interface, with an enhanced interfacial TN exceeding 200 K. This novel magnetic interface in turn allows a robust and deterministic spin-orbit torque switching without an external magnetic field at a low critical current density of 300 kA cm-2. The antiferromagnetically coupled architecture of Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe, featuring unique magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds potential for practical applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Magnetic exchange coupled nonreciprocal devices for cryogenic memory

As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the development of efficient superconducting memories. Such devices should be nonvolatile, scalable to high integration density and memory capacity, enable fast and low-power reading and writing operations, and be compatible with the digital logic. We present a versatile device platform to develop such nonvolatile memory devices consisting of an exchange-coupled ultra-thin superconductor encapsulated between two ferromagnetic insulators (FIs). The superconducting exchange coupling, which is tuneable by the relative alignment between the FI magnetizations, enables the switching of superconductivity on and off. We exploit this mechanism to create a superconducting nonvolatile memory where single-cell writing is realized using heat-assisted magnetic recording, and explain how it can become a contender for state-of-the-art superconducting memories. Furthermore, below their critical temperatures, the memory elements show a marked nonreciprocity, with zero magnetic field superconducting diode efficiencies exceeding $\pm$60%, showing the versatility of the proposed devices for superconducting computing.

cond-mat.supr-con↗

arXiv2025

Magnetically Modulated Electrical Switching in an Antiferromagnetic Transistor

A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr, a van der Waals (vdW) antiferromagnetic semiconductor, as the channel material. Unlike the weak magnetic tunability of in-plane currents previously reported in vdW magnets, the channel current of our transistor is efficiently tuned by both gate voltage and magnetic transitions, achieving a magnetoresistance ratio as high as 1500%. Combining measurement and theoretical modeling, we reveal magnetically modulated carrier concentration as the origin of the large magnetoresistance. The strategy of using both magnetic ordering and electric field in the same device to control ON/OFF states of a transistor opens a new avenue of energy-efficient spintronics for memory, logic and magnetic sensing applications.

cond-mat.mtrl-sci↗

arXiv2025

Compensation-Like Temperature and Spin-Flip Switch in Strained Thulium Iron Garnet Thin Films: Tuning Sublattice Interactions for Ferrimagnetic Spintronics

Certain rare-earth iron garnet (RIG) thin films combine desirable properties such as low magnetic damping, high magnetostriction, and, in some cases, perpendicular magnetic anisotropy (PMA), making them attractive for spintronics applications. However, the interplay between their magnetic sublattices in confined films remains poorly explored, particularly the coupling between 3d and 4f electrons. Here, we investigate the magnetic properties of a 30 nm-thick thulium iron garnet (TmIG) thin film, where tensile strain promotes PMA. SQUID magnetometry and X-ray Magnetic Circular Dichroism measurements reveal a magnetization minimum near 50 K under moderate magnetic fields, leading to a compensation-like temperature (Tcomp-like), a feature absent in bulk TmIG. The presence of Tcomp-like is particularly relevant for controlling magnetization dynamics through compensation phenomena. Additionally, we observe a field-induced spin-flip transition in the Tm sublattice, where Tm moments reorient and align ferromagnetically concerning the Fe sublattices. This mechanism can be exploited for energy-efficient magnetization reversal. These findings provide new insights into strain-driven magnetic phenomena in rare-earth iron garnet thin films, highlighting the interplay between exchange interactions and anisotropy in confined geometries, which is crucial for the development of spintronic and magnonic devices.

cond-mat.mtrl-sci↗

arXiv2024

Signatures of a Spin-Active Interface and Locally Enhanced Zeeman field in a Superconductor-Chiral Material Heterostructure

A localized Zeeman field, intensified at heterostructure interfaces, could play a crucial role in a broad area including spintronics and unconventional superconductors. Conventionally, the generation of a local Zeeman field is achieved through magnetic exchange coupling with a magnetic material. However, magnetic elements often introduce defects, which could weaken or destroy superconductivity. Alternatively, the coupling between a superconductor with strong spin-orbit coupling and a non-magnetic chiral material could serve as a promising approach to generate a spin active interface. In this study, we leverage an interface superconductor, namely induced superconductivity in noble metal surface states, to probe the spin active interface. Our results unveil an enhanced interface Zeeman field, which selectively closes the surface superconducting gap while preserving the bulk superconducting pairing. The chiral material, i.e. trigonal tellurium, also induces Andreev bound states (ABS) exhibiting spin polarization. The field dependence of ABS manifests a substantially enhanced interface Land\'e g-factor (g_eff ~ 12), thereby corroborating the enhanced interface Zeeman energy.

cond-mat.supr-con↗

arXiv2024

Highly Efficient Superconducting Diodes and Rectifiers for Quantum Circuitry

Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many critical needs. SDs have been the subject of multiple studies, but integrating several SDs in a superconducting circuit remains a challenge. Here we implement the first SD bridge with multiple SDs exhibiting reproducible characteristics operating at temperatures of a few Kelvin. We demonstrate its functionality as a full wave rectifier using elemental superconductors and insulating ferromagnets, with efficiency up to 43%, and ac to dc signal conversion capabilities at frequencies up to 40 kHz. Our results show a pathway with a highly scalable thin film platform for nonreciprocal superconducting circuits. They could significantly reduce energy consumption as well as decohering thermal and electromagnetic noise in quantum computing.

cond-mat.supr-con↗

arXiv2024

Nonreciprocity of supercurrent along applied magnetic field

Nonreciprocal current responses arise in a broad range of systems, from magnons and phonons to supercurrents, due to an interplay between spatial and temporal symmetry breakings. These find applications in devices, such as circulators and rectifiers, as well as in probing the interactions and states that underlie the nonreciprocity. An established symmetry argument anticipates emergence of nonreciprocal currents along a direction perpendicular to the applied magnetic field that breaks the time-reversal symmetry. Here, motivated by recent experiments, we examine the emergence of nonreciprocity in vortex-limited superconducting critical currents along an applied magnetic field. Employing London's equations for describing the Meissner response of a superconducting film, we find that an additional symmetry breaking due to a preferred vortex axis enables nonreciprocal critical currents along the applied magnetic field, consistent with the so far unexplained experimental observation. Building on our concrete theoretical model for supercurrents, we discuss a possible generalization of the prevailing symmetry consideration to encompass nonreciprocal currents along the time-reversal symmetry breaking direction.

cond-mat.supr-con↗

arXiv2023

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2O3(001) substrates using molecular beam epitaxy. Robust ferromagnetism persists in the 2D limit. In particular, the Curie temperature TC of 2 ML Cr2Te3 increases from 100 K to ~ 120 K when proximitized to topological insulator (TI) (Bi,Sb)2Te3, with substantially boosted magnetization as observed via polarized neutron reflectometry. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely universal underlying TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics.

cond-mat.mtrl-sci↗

arXiv2022

Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions

Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 {\mu}m2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the structurally and dimensionally optimized OMTJs. Cu-PLY-based OMTJs, show a significant magnetoresistance up to 14 percent at room temperature due to the formation of hybrid states at the metal-molecule interfaces called spinterface, which reveals the importance of spin-dependent interfacial modification in OMTJs design. In particular, Cu-PLY OMTJs shows a stable voltage-driven resistive switching response that suggests their use as a new viable and scalable platform for building molecular scale quantum memristors and processors.

cond-mat.mtrl-sci↗

arXiv2022

Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor

Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access.

cond-mat.mes-hall↗

arXiv2022

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.

cond-mat.mtrl-sci↗

arXiv2022

Progress and prospects in the quantum anomalous Hall effect

The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and low-power information processing utilizing dissipationless chiral edge transport. In this Perspective, we provide an overview of the recent achievements as well as the materials challenges and opportunities, pertaining to engineering intrinsic/interfacial magnetic coupling, that are expected to propel future development of the field.

cond-mat.mes-hall↗

arXiv2022

Ubiquitous Superconducting Diode Effect in Superconductor Thin Films

The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.

cond-mat.supr-con↗

arXiv2021

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

cond-mat.mes-hall↗

arXiv2021

Interfacial control of vortex-limited critical current in type II superconductor films

In a small subset of type II superconductor films, the critical current is determined by a weakened Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A film property thus depends sensitively on the surface or interface to an adjacent material. We theoretically investigate the dependence of vortex barrier and critical current in such films on the Rashba spin-orbit coupling at their interfaces with adjacent materials. Considering an interface with a magnetic insulator, we find the spontaneous supercurrent resulting from the exchange field and interfacial spin-orbit coupling to substantially modify the vortex surface barrier, consistent with a previous prediction. Thus, we show that the critical currents in superconductor-magnet heterostructures can be controlled, and even enhanced, via the interfacial spin-orbit coupling. Since the latter can be controlled via a gate voltage, our analysis predicts a class of heterostructures amenable to gate-voltage modulation of superconducting critical currents. It also sheds light on the recently observed gate-voltage enhancement of critical current in NbN superconducting films.

cond-mat.supr-con↗

arXiv2021

Signatures of superconducting triplet pairing in Ni--Ga-bilayer junctions

Ni-Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al2O3(/EuS)/Ni-Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)-Ga (60 nm) bilayers can be well understood within the framework of earlier results, which associate the emerging main conductance maxima with the junction films' superconducting gaps, thinner Ni (1.6 nm)-Ga (30 nm) bilayers entail completely different physics, and give rise to novel large-bias (when compared to the superconducting gap of the thin Al film as a reference) conductance-peak subseries that we term conductance shoulders. These conductance shoulders might attract considerable attention also in similar magnetic superconducting bilayer junctions, as we predict them to offer an experimentally well-accessible transport signature of superconducting triplet pairings that are induced around the interface of the Ni-Ga bilayer. We further substantiate this claim performing complementary polarized neutron reflectometry measurements on the bilayers, from which we deduce (1) a nonuniform magnetization structure in Ga in a several nanometer-thick area around the Ni-Ga boundary and can simultaneously (2) satisfactorily fit the obtained data only considering the paramagnetic Meissner response scenario. While the latter provides independent experimental evidence of induced triplet superconductivity inside the Ni-Ga bilayer, the former might serve as the first experimental hint of its potential microscopic physical origin.

cond-mat.supr-con↗

arXiv2020

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconducting bridges, tunable via a back-gate voltage. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore we demonstrate infinite electroresistance and a hysteretic resistance dependence on the applied electric field which could lead to logic and memory applications in a superconductors-based low-dissipation digital computing paradigm. Our work thus provides the first demonstration of an electric field enhancement in the superconducting property in metallic superconductors, constituting a crucial step towards understanding of electric field-effects on the fundamental properties of a superconductor and its exploitation for future technologies.

physics.app-ph↗