arXiv subjects

J. Kub

Publications and source records attributed to J. Kub.

2 recordsLinked to original sources

arXiv2026

Unusual phase coexistence regime across the ferroelectric - paraelectric transition

A PbTiO3 epitaxial thin film grown on a DyScO3 substrate was studied by x-ray diffraction in the temperature range of 20-500 degrees Celsius. It is found that the ferroelectric to paraelectric phase transition proceeds through a peculiar transitional coexistence state extending between 402 degrees Celsius and 414 degrees Celsius. Within this temperature interval, at a temperature of 405 degrees Celsius, a domain structure transition occurs, at which the three-domain c/a1/a2 polytwin phase transforms into an ordinary c/a2 twinned phase. It is proposed that the coexistence of two independent twinned phases with the paraelectric phase is enabled by vertical strain gradients in the film.

cond-mat.mtrl-sci↗

arXiv2010

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional calculations evidence an attraction of Mn_Ga impurities to the stacking faults. We argue that the enhanced Mn density along the common [1-10] direction of the stacking fault planes produces sufficiently strong [110]/[1-10] symmetry breaking mechanism to account for the in-plane uniaxial magnetocrystalline anisotropy of these ferromagnetic semiconductors.

cond-mat.mtrl-sci↗