arXiv subjects

Ivan Prieto

Publications and source records attributed to Ivan Prieto.

7 recordsLinked to original sources

arXiv2025

High-purity frequency-degenerate photon pair generation via cascaded SFG/SPDC in thin film lithium niobate

Frequency-degenerate photon pairs generated using nonlinear photonic integrated devices are a crucial resource for scalable quantum information processing and metrology. However, their realization is hindered by unwanted parametric processes occurring within the same phase matching band, which degrade the signal-to-noise ratio and reduce the purity of the associated quantum states. Here, we propose a dual-pump scheme to produce frequency-degenerate photon pairs, based on cascaded sum-frequency generation and spontaneous parametric down-conversion occurring within a single waveguide, while strongly suppressing parasitic photon pair generation from single-pump processes. This approach significantly simplifies the design compared to microresonator-based methods and enables both pumping and collection of photon pairs entirely in the telecom band. We experimentally validate the concept in a layer-poled thin film lithium niobate waveguide, achieving frequency-degenerate photon pair generation with a brightness of \SI{1.0(3)e5}{\hertz \per \nm \per \square \milli \watt } and a 40 dB suppression of unwanted single-pump processes.

quant-ph↗

arXiv2024

Single-photon detectors on arbitrary photonic substrates

Detecting non-classical light is a central requirement for photonics-based quantum technologies. Unrivaled high efficiencies and low dark counts have positioned superconducting nanowire single photon detectors (SNSPDs) as the leading detector technology for fiber and integrated photonic applications. However, a central challenge lies in their integration within photonic integrated circuits regardless of material platform or surface topography. Here, we introduce a method based on transfer printing that overcomes these constraints and allows for the integration of SNSPDs onto arbitrary photonic substrates. We prove this by integrating SNSPDs and showing through-waveguide single-photon detection in commercially manufactured silicon and lithium niobate on insulator integrated photonic circuits. Our method eliminates bottlenecks to the integration of high-quality single-photon detectors, turning them into a versatile and accessible building block for scalable quantum information processing.

quant-ph↗

arXiv2023

Photonic crystal cavity IQ modulators in thin-film lithium niobate for coherent communications

Thin-Film Lithium Niobate (TFLN) is an emerging integrated photonic platform showing great promise due to its large second-order nonlinearity at microwave and optical frequencies, cryogenic compatibility, large piezoelectric response, and low optical loss at visible and near-infrared wavelengths. These properties enabled Mach-Zehnder interferometer-based devices to demonstrate amplitude- and in-phase/quadrature (IQ) modulation at voltage levels compatible with complementary metal-oxide-semiconductor (CMOS) electronics. Maintaining low-voltage operation requires centimeter-scale device lengths, making it challenging to realize the large-scale circuits required by ever-increasing bandwidth demands in data communications. Reduced device sizes reaching the 10 um scale are possible with photonic crystal (PhC) cavities. So far, their operation has been limited to modulation of amplitudes and required circulators or lacked cascadability. Here, we demonstrate a compact IQ modulator using two PhC cavities operating as phase shifters in a Fabry-Perot-enhanced Michelson interferometer configuration. It supports cascadable amplitude and phase modulation at GHz bandwidths with CMOS-compatible voltages. While the bandwidth limitation of resonant devices is often considered detrimental, their compactness enables dense co-integration with CMOS electronics where clock-rate-level operation (few GHz) removes power-hungry electrical time-multiplexing. Recent demonstrations of chip-scale transceivers with dense-wavelength division multiplied transceivers could be monolithically implemented and driven toward ultimate information densities using TFLN electro-optic frequency combs and our PhC IQ modulators.

physics.optics↗

arXiv2020

Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas

Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.

cond-mat.supr-con↗

arXiv2020

A singlet triplet hole spin qubit in planar Ge

Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $\mu$s which we extend beyond 150 $\mu$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.

cond-mat.mes-hall↗

arXiv2020

Twisted Nano-optics: Manipulating Light at the Nanoscale with Twisted Phonon Polaritonic Slabs

Recent discoveries have shown that when two layers of van der Waals (vdW) materials are superimposed with a relative twist angle between their respective in-plane principal axes, the electronic properties of the coupled system can be dramatically altered. Here, we demonstrate that a similar concept can be extended to the optics realm, particularly to propagating polaritons, hybrid light-matter interactions. To do this, we fabricate stacks composed of two twisted slabs of a polar vdW crystal (MoO3) supporting low-loss anisotropic phonon polaritons (PhPs), and image the propagation of the latter when launched by localized sources (metal antennas). Our images reveal that under a critical angle the PhPs isofrequency curve (determining the PhPs momentum at a fixed frequency) undergoes a topological transition. Remarkably, at this angle, the propagation of PhPs is strongly guided along predetermined directions (canalization regime) with no geometrical spreading (diffraction-less). These results demonstrate a new degree of freedom (twist angle) for controlling the propagation of polaritons at the nanoscale with potential for nano-imaging, (bio)-sensing, quantum applications and heat management.

physics.optics↗

arXiv2019

Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits

We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.

cond-mat.mes-hall↗