arXiv subjects

Iuegyun Hong

Publications and source records attributed to Iuegyun Hong.

3 recordsLinked to original sources

arXiv2026

Topological signatures in the curvature-induced energy response

Relativistic effective field theory predicts a topological energy response to a gravitational field that appears at third order in spatial gradients. Here, we investigate how this response emerges in the nonrelativistic Haldane model using a microscopic lattice formulation of curvature-induced deformations. We find that the leading first-order energy response is nonuniversal and depends on the bond-resolved structure of the deformation; in particular, it vanishes for a symmetric modulation of the three nearest-neighbor hoppings. At third order, the curvature-induced energy response contains a bond-symmetric component together with nonuniversal bond-dependent contributions. The bond-symmetric component, which is isolated by a uniform modulation of the three hoppings, exhibits a universal discontinuity across the topological transition whose magnitude agrees with the relativistic gravitational Chern--Simons prediction. Thus, although the full curvature-induced energy response generally contains nonuniversal lattice contributions, its third-order response retains a universal topological component beyond the relativistic limit.

cond-mat.mes-hall↗

arXiv2025

Quantum Monte Carlo Benchmarking of Molecular Adsorption on Graphene-Supported Single Pt Atom

The precise understanding of adsorption energetics and molecular geometry at catalytic sites is fundamental for advancing catalysis, particularly under the constraints of resource efficiency and environmental sustainability. This study benchmarks the performance of density functional theory (DFT) calculations against diffusion Monte Carlo (DMC) calculations for adsorption properties of small gas molecules relevant to CO oxidation -- namely O$_2$, CO, CO$_2$, and atomic oxygen -- on a single Pt atom supported by pristine graphene. Our findings reveal that DMC calculations provide a significantly different landscape of adsorption energetics compared to DFT results. Notably, DFT predicts different lowest-energy configurations and spin states, particularly for O$_2$, which suggests potential discrepancies in predicting the catalytic behavior. Furthermore, this study identifies the critical issue of CO poisoning, highlighted by the large disparity between the DMC adsorption energies of O$_2$ ($-1.23(2)$ eV) and CO ($-3.37(1)$ eV), which can inhibit the catalytic process. These results emphasize the necessity for more sophisticated computational approaches in catalysis research, aiming to refine the prediction accuracy of reaction mechanisms and to enhance the design of more effective catalysts.

cond-mat.mtrl-sci↗

arXiv2024

Stacking Polymorphism of PtSe$_{2}$: Its Implication to Layer-dependent Metal-insulator Transitions

Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examined the structural stability and interlayer binding properties of PtSe$_2$, a representative transition metal dichalcogenide (TMD) with strong interlayer interaction. Our DMC results for the bilayer revealed that AA and AB-r stacking modes are nearly degenerate, highlighting the significant role of interlayer hybridization in offsetting the energy cost due to larger interlayer separations in the AB-r mode. Additionally, our DMC-benchmarked DFT studies with the r$^2$SCAN+rVV10 functional demonstrated pronounced stacking polymorphism in few-layer PtSe$_2$, suggesting the potential for stacking faults and the formation of grain boundaries between different stacking domains which could develop metallic electronic structures. Thus this polymorphism, along with selenium vacancies, influences a layer-dependent metal-insulator transition observed in few-layer PtSe$_2$. Our findings emphasize the importance of both van der Waals interactions and interlayer hybridization in determining the phase stability and electronic properties of TMDs, advancing our understanding of their fundamental properties and refining theoretical models for practical applications in nanoelectronic devices.

cond-mat.mtrl-sci↗