Fast On-Chip Thermometry with TiN Kinetic Inductance Resonators in 22 nm Process Technology
Understanding the temporal and spatial dependence of temperature is critical in high-performance cryogenic devices. Typical thermometry techniques struggle to simultaneously combine high bandwidth, sensitivity and on-chip integration, limiting their ability to measure fast intra-device thermal fluctuations. Here, we demonstrate a time-resolved thermometry platform based on TiN kinetic inductance resonators integrated in a 22 nm FDSOI chip. By tracking temperature-dependent shifts in the resonant frequency, we achieve sub-millikelvin temperature sensitivity down to temperatures of 100 mK. Time-resolved on-chip pulsed heating experiments as a function of distance reveal an onset delay, consistent with a quasi-ballistic heat propagation velocity of 3.9 ${\pm}$ 0.1 mm ${\mu}$s${}^{-1}$. We also show that elevated temperatures increase net thermal conductance, shortening thermal relaxation times across all spatial separations. This behaviour manifests in two distinct regimes: a substrate-limited regime at 100 mK, where cooling rates vary with heater distance, and a Kapitza boundary-limited regime at 400 mK, where thermal relaxation becomes more spatially uniform. These measurements demonstrate kinetic inductance thermometry's ability to rapidly probe non-equilibrium temperature dynamics in cryogenic devices such as quantum processors.