arXiv subjects

Igor Levin

Publications and source records attributed to Igor Levin.

3 recordsLinked to original sources

arXiv2026

Connecting Diffuse Scattering to Atomic-Site-Resolved Occupancy and Displacement Fields through Fourier Filtering

Local structural correlations are encoded in diffuse scattering, but identifying atomic motifs that produce specific diffuse features can be challenging. We introduce MOSAIC, a computational framework for this task when an atomistic configuration is available and a phase-bearing scattering amplitude can be calculated. Our approach relies on applying the Fourier filter to this amplitude over the reciprocal-space regions encompassing the scattering features of interest to obtain maps of atomic displacements and site occupancies responsible for those features. The method is effective in interrogating the nature and spatial distributions of interatomic correlations in large-scale structural models, such as obtained using Reverse Monte Carlo refinements from experimental data, molecular dynamics, or Monte Carlo simulations, or 2D structural projections derived from atomic-resolution electron microscopy images.

cond-mat.mtrl-sci↗

arXiv2014

Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions

The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode in a traditional internal photoemission measurement, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al2O3/InAs/GaSb layer structure, the barrier height from the top of InAs and GaSb valence band to the bottom of Al2O3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of Al2O3 valence band to the bottom of InAs and GaSb conduction band. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted model of electron quantum tunneling efficiency and transistor performance.

cond-mat.mes-hall↗

arXiv2012

The magnetic structure of bixbyite a-Mn2O3: a combined density functional theory DFT+U and neutron diffraction study

First principles density functional theory DFT+U calculations and experimental neutron diffraction structure analyses were used to determine the low-temperature crystallographic and magnetic structure of bixbyite Mn2O3. The energies of various magnetic arrangements, calculated from first principles, were fit to a cluster-expansion model using a Bayesian method that overcomes a problem of underfitting caused by the limited number of input magnetic configurations. The model was used to predict the lowest-energy magnetic states. Experimental determination of magnetic structure benefited from optimized sample synthesis, which produced crystallite sizes large enough to yield a clear splitting of peaks in the neutron powder diffraction patterns, thereby enabling magnetic-structure refinements under the correct orthorhombic symmetry. The refinements employed group theory to constrain magnetic models. Computational and experimental analyses independently converged to similar ground states, with identical antiferromagnetic ordering along a principal magnetic axis and secondary ordering along a single orthogonal axis, differing only by a phase factor in the modulation patterns. The lowest-energy magnetic states are compromise solutions to frustrated antiferromagnetic interactions between certain corner-sharing MnO6 octahedra.

cond-mat.mtrl-sci↗