arXiv subjects

I. Gayduchenko

Publications and source records attributed to I. Gayduchenko.

8 recordsLinked to original sources

arXiv2026

Room-temperature graphene sub-terahertz detector integrated on a silicon dielectric waveguide

Terahertz (THz) photonics offers a promising platform for next-generation 6G wireless communications, on-chip spectrometers, and non-invasive biomedical sensors. In the near- and mid-infrared, monolithically integrated photodetectors are a cornerstone of photonic integrated circuits (PICs). In the THz range, however, such integration on low-loss dielectric waveguides remains an open challenge: to date, room-temperature on-waveguide detection has been realized only through hybrid flip-chip assembly of discrete elements, which leads to poor mode coupling, larger footprint, and reduced mechanical stability. Here we address this gap by demonstrating a room-temperature graphene sub-THz detector monolithically integrated on a high-resistivity silicon dielectric waveguide for D-band (110-170 GHz) operation. We couple an hBN-encapsulated graphene channel to the guided mode using a tapered slot-line antenna patterned directly onto the silicon surface. The detector achieves a voltage responsivity of 11.5 V/W and a 3 dB bandwidth of 1.94 GHz, with the latter currently limited by parasitic inductance of the readout interconnects rather than by the intrinsic graphene response. This platform provides a practical pathway to fully integrated room-temperature THz photonic circuits, where electrostatic gating and impedance matching can improve both responsivity and bandwidth by roughly an order of magnitude.

physics.optics↗

arXiv2026

Correlated Insulator Moir\'e Bolometer

Light incident on an insulator is generally not expected to turn it into a metal without invoking intense ultrafast excitation that leads to transient structural transitions. Here we show that magic-angle twisted bilayer graphene tuned to half filling of the moir\'e band provides a notable exception to this expectation. We find that weak beam of long-wavelength photons, with energies comparable to the flat-band width, selectively heat the low-heat-capacity electronic subsystem, thereby suppressing the correlated gap. This produces a giant resistance change governed not by a persistent photocarrier population, but by the extreme sensitivity of a many-body correlated gap to weak electronic heating. The resulting photon-driven insulator-to-metal transition produces a broadband low-noise photoresponse with voltage responsivity exceeding millivolts per nW of absorbed power. The mechanism is dual to superconducting hot-electron response: radiation-heated electrons suppress a many-body order, but in reverse the correlated insulator melts into a metal, providing robustness to magnetic fields of several tesla and a sharp insulator-to-metal resistive contrast. Our results establish correlated flat-band systems as a platform for ultra-sensitive detection of faint long-wavelength radiation.

cond-mat.mes-hall↗

arXiv2026

Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies

Graphene Josephson junctions (JJ) provide a promising platform for ultra-broadband quantum sensing of light owing to graphene's frequency-independent absorption, vanishing electronic heat capacity, and weak electron-phonon coupling, which enable rapid suppression of the critical current through radiation-induced electron heating. Existing investigations have been confined to the microwave and infrared regimes, where competing detector technologies are already established; by contrast, the terahertz (THz) band - where sensitivity is most urgently lacking and no mature quantum sensor exists - has remained largerly unexplored. Here we demonstrate a strong photoresponse of graphene JJs at THz frequencies, establishing a first experimental step towards graphene-based THz quantum sensors. Under low-intensity illumination, we observe a pronounced suppression of the critical current that generates a strong photovoltage (Vph) under current bias. By tracking this Vph and independently measuring the electron temperature as a function of absorbed power, we extract a responsivity of 88 kV W^-1 and a noise-equivalent power of 45 aW Hz^-1/2 at 1.7 K. Furthermore, gate tunability of our JJ enables access to a regime where hysteretic current-voltage characteristics persist up to 0.9 K, offering a potential route toward single-photon THz detection beyond millikelvin (mK) temperatures. These findings establish graphene JJ as a versatile platform for broadband cryogenic radiation sensing and point towards their use as quantum sensors at THz frequencies.

cond-mat.mes-hall↗

arXiv2026

Graphene Zero-Bias Sub-Terahertz Turnkey Detector with Above 43 GHz Bandwidth

High-frequency terahertz (THz) detectors are vital for next-generation high-speed wireless communication systems. Graphene, with its high carrier mobility, broadband absorption, and weak electron-phonon coupling, offers great promise for ultra-fast THz photothermoelectric devices. Although graphene-based detectors in the infrared range have shown bandwidths above 500 GHz, extending their operation to the THz range is difficult because long-wavelength radiation does not efficiently couple to the small graphene area. To overcome this issue, THz antennas are often employed; however, their use typically limits system performance to only a few gigahertz due to parasitic effects. In this work, we present an antenna-coupled sub-THz graphene detector with a bandwidth exceeding 43 GHz. We optimized the detector design to minimize losses, match the antenna impedance to the 1 kOhm graphene channel, and maintain zero-bias operation. Importantly, we introduce a compact, turnkey packaged solution. Our results provide a practical route toward high-speed and low-power graphene THz detectors suitable for real-world communication and imaging applications.

cond-mat.mes-hall↗

arXiv2025

Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moir\'e Superlattices

Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moir\'e band engineering unlocks these singularities for THz optoelectronics. Using 2D moir\'e structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moir\'e superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.

cond-mat.mes-hall↗

arXiv2024

Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.

cond-mat.mes-hall↗

arXiv2023

Fundamental limits of few-layer NbSe$_2$ microbolometers at terahertz frequencies

The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast photoresponse, superconducting hot-electron bolometers (HEBs) have become a critical component in these applications. While superconducting HEBs are traditionally made from sputtered superconducting thin films like Nb or NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we report the fabrication of superconducting HEBs out of few-layer NbSe$_2$ microwires. By improving the interface between NbSe$_2$ and metal leads connected to a broadband antenna, we overcome the impedance mismatch between this vdW superconductor and the radio frequency (RF) readout circuitry that allowed us to achieve large responsivity THz detection over the range from 0.13 to 2.5 THz with minimum noise equivalent power of 7~pW$\sqrt{Hz}$. Using the heterodyne sub-THz mixing technique, we reveal that NbSe$_2$ superconducting HEBs are relatively fast and feature a characteristic response time in the nanosecond range limited by the slow heat escape to the bath through a SiO$_2$ layer, on which they are assembled, in agreement with energy relaxation model. Our work expands the family of materials for superconducting HEBs technology, reveals NbSe$_2$ as a promising platform, and offers a reliable protocol for the in-lab production of custom bolometers using the vdW assembly technique.

cond-mat.supr-con↗

arXiv2018

Resonant Terahertz Detection Using Graphene Plasmons

Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moir\'e minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures and strong magnetic fields) and promise a viable route for various photonic applications.

cond-mat.mes-hall↗