arXiv subjects

I. Batko

Publications and source records attributed to I. Batko.

7 recordsLinked to original sources

arXiv2020

Effect of pressure on electric transport properties of carbon-doped EuB6

We report about influence of external pressure on electrical resistivity of EuB5.99C0.01, the compound believed to be intrinsically inhomogeneous due to fluctuation of carbon content. Our results show that the low-temperature resistivity maximum shifts to lower temperature with applied pressure, opposite to the behavior reported for stoichiometric EuB6. The origin of such qualitative difference we associate with the increasing volume fraction of the phase that is not compatible with ferromagnetic ordering (originating in regions with relatively higher carbon concentratio) with enhancing pressure. Our results support a recent proposition that carbon-rich regions strongly influence magnetotransport properties of carbon-doped EuB6, such as they play a role of spacers, which prevent percolation of ferromagnetic phase.

cond-mat.str-el↗

arXiv2018

SmB6: A material with anomalous energy distribution function of charge carriers?

We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in an impurity band of valence fluctuating semiconductors both occupied and unoccupied sites can be found in the impurity band above as well as below the Fermi level even in the ground state. As a consequence, the ground state energy distribution function of the subsystem of localized charge carriers for valence fluctuating semiconductors is qualitatively different than one for conventional semiconductors at T = 0 K, what sheds new light on interpretation of experimental results of valence fluctuating semiconductors, e.g. SmB6 and YbB12, at lowest temperatures.

cond-mat.str-el↗

arXiv2016

Effect of valence fluctuations on the ground state properties of SmB6

We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in the impurity band of SmB6, energies of electrons occupying impurity sites can be due to the uncertainty principle only estimated with corresponding uncertainty, so they can be represented by energy intervals of non-zero width. As a conse- quence, both occupied as well as unoccupied states can be found in the impurity band above as well as below Fermi level even in the ground state. Therefore the subsystem of localized charge carriers in the ground state of SmB6 cannot be described by an energy distribution function expected for T = 0 K. This fundamental conclusion adds another reason for absence of resistivity divergence in SmB6 at lowest temperatures, and sheds new light on interpretation of experimental data obtained for SmB6 and similar systems at lowest temperatures.

cond-mat.str-el↗

arXiv2011

Observation of drift and diffusion processes in Ti/TiOx/Ti memristive devices prepared by local anodic oxidation

We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior and inferred diffusion of oxygen vacancies in the TiOx barrier. Consequent Kelvin probe force microscopy studies provided evidence for the diffusion, as well as for expected oxygen vacancy drift. Time evolution of the space distribution of the vacancies due to the diffusion process revealed minute-scale (at least) retention times of the devices. The work presents technology alternative for fabrication of memristive nanodevices in geometry favouring advantageous scanning probe microscopy studies of their in-barrier processes, as well as widely utilizable approach to search for novel oxide materials for perspective memristive applications.

cond-mat.mes-hall↗

arXiv2007

SmB$_6$: Topological insulator or semiconductor with valence-fluctuation induced hopping transport?

We advert to the fact that presence of valence fluctuations (VFs) in semiconductors with in-gap impurity bands unconditionally leads to dynamical changes (fluctuations) of energies of localized impurity states. We provide arguments that in the impurity subnetwork consisting of centers having energy levels fluctuating around the Fermi energy there exist favorable conditions for hops from occupied states to empty states of less energy. Consequently, we propose original valence-fluctuation induced hopping mechanism as a new possibility to explain unusual metallic-like conduction of SmB$_6$ and other Kondo insulators experimentally observed at lowest temperatures. Interestingly, the proposed mechanism infers enhanced metallic-like surface conductivity of SmB$_6$, what resembles a characteristic property of topological insulator, and is in agreement with experimental observations attempting to prove the existence of topologically protected surface state in SmB$_6$.

cond-mat.str-el↗

arXiv2007

Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons

We present results of measurements of electrical, magnetic and thermal properties of EuB$_{5.99}$C$_{0.01}$. The observed anomalously large negative magnetoresistance as above, so below the Curie temperature of ferromagnetic ordering $T_C$ is attributed to fluctuations in carbon concentration. Below $T_C$ the carbon richer regions give rise to helimagnetic domains, which are responsible for an additional scattering term in the resistivity, which can be suppressed by a magnetic field. Above $T_C$ these regions prevent the process of percolation of magnetic polarons (MPs), acting as "spacers" between MPs. We propose that such "spacers", being in fact volumes incompatible with existence of MPs, may be responsible for the decrease of the percolation temperature and for the additional (magneto)resistivity increase in systems with MPs.

cond-mat.mtrl-sci↗

arXiv2004

Calorimetric tunneling study of heat generation in metal-vacuum-metal tunnel junction

We have proposed novel calorimetric tunneling (CT) experiment allowing exact determination of heat generation (or heat sinking) in individual tunnel junction (TJ) electrodes which opens new possibilities in the field of design and development of experimental techniques for science and technology. Using such experiment we have studied the process of heat generation in normal-metal electrodes of the vacuum-barrier tunnel junction (VBTJ). The results show there exists dependence of the mutual redistribution of the heat on applied bias voltage and the direction of tunnel current, although the total heat generated in tunnel process is equal to Joule heat, as expected. Moreover, presented study indicates generated heat represents the energy of non-equilibrium quasiparticles coming from inelastic electron processes accompanying the process of elastic tunneling.

cond-mat.other↗