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Hu He

Publications and source records attributed to Hu He.

2 recordsLinked to original sources

RS-HyRe-R1: A Hybrid Reward Mechanism to Overcome Perceptual Inertia for Remote Sensing Images Understanding

Reinforcement learning (RL) post-training substantially improves remote sensing vision-language models (RS-VLMs). However, when handling complex remote sensing imagery (RSI) requiring exhaustive visual scanning, models tend to rely on localized salient cues for rapid inference. We term this RL-induced bias "perceptual inertia". Driven by reward maximization, models favor quick outcome fitting, leading to two limitations: cognitively, overreliance on specific features impedes complete evidence construction; operationally, models struggle to flexibly shift visual focus across tasks. To address this bias and encourage comprehensive visual evidence mining, we propose RS-HyRe-R1, a hybrid reward framework for RSI understanding. It introduces: (1) a spatial reasoning activation reward that enforces structured visual reasoning; (2) a perception correctness reward that provides adaptive quality anchors across RS tasks, ensuring accurate geometric and semantic alignment; and (3) a visual-semantic path evolution reward that penalizes repetitive reasoning and promotes exploration of complementary cues to build richer evidence chains. Experiments show RS-HyRe-R1 effectively mitigates "perceptual inertia", encouraging deeper, more diverse reasoning. With only 3B parameters, it achieves state-of-the-art performance on REC, OVD, and VQA tasks, outperforming models up to 7B parameters. It also demonstrates strong zero-shot generalization, surpassing the second-best model by 3.16%, 3.97%, and 2.72% on VQA, OVD, and REC, respectively. Code and datasets are available at https://github.com/geox-lab/RS-HyRe-R1.

cs.CV

Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO2 was characterized by using transmission electron microscopy and X-ray diffraction. The TBR is measured as 8.11*10-8 m2K/W by 3-omega method. Furthermore, the diffuse mismatch model was employed to predict the TBR of different interfaces which is in good agreement with measurements. Heat transport behavior based on phonon scattering perspective was also discussed to understand the variations of TBR across different interfaces. Besides, the intrinsic thermal conductivity of SiO2 thin films (200~1,500 nm in thickness) on 4H-SiC substrates was measured by 3 omega procedure, as 1.42 W/mK at room temperature. It is believed the presented results could provide useful insights on the thermal management and heat dissipation for SiC devices.

physics.app-ph