arXiv subjects

Hongwei Tang

Publications and source records attributed to Hongwei Tang.

9 recordsLinked to original sources

arXiv2026

A Systematic Analysis of Automatic Differentiation versus Discretization-based Constraints for Physics-Informed PDE Solvers

Physics-informed neural networks (PINNs) represent a growing frontier in using artificial intelligence to solve partial differential equations (PDEs). Automatic differentiation (AD) plays a central role in this paradigm, which is mesh-free and replaces traditional iterative solvers with gradient-based optimization in continuous space. However, the inherent limitations of AD, particularly in handling higher-order derivatives and discontinuous solutions, pose significant challenges for complex problems. This has motivated a growing number of researchers to explore discretization-based constraints as an alternative path. Yet, the respective applicability of these two paradigms remains largely unexplored. In this work, we conduct systematic experiments across a wide spectrum of problems, from simple linear Poisson to high-Mach hypersonic flows with strong discontinuities. Through a rigorous decomposition of approximation, optimization, and truncation errors, we systematically elucidate the fundamental trade-offs and error-governing mechanisms of both paradigms, as well as two representative network architectures: multi-layer perceptron (MLP) and graph neural network (GNN). Our results reveal a consistent trend: as nonlinearity strengthens, the accuracy advantage of discretization-based constraints becomes increasingly pronounced, with smaller optimization errors compensating for the truncation errors. Moreover, the more complex the nonlinearity and boundary conditions, the greater the advantage of GNN over MLP. These insights offer a robust practical guideline for configuring neural PDE solvers in demanding engineering applications. Our source data and code are available at https://github.com/guoxing0809/neuropde_analysis.

math.NA↗

arXiv2026

Meta-Learning Where to Allocate Experts: Task-Conditioned Layer-Wise Compression for MoEs

Mixture-of-Experts (MoE) models route each token to a subset of expert networks, increasing capacity while keeping per-token computation sparse. In many deployed MoEs, the number of active experts is fixed across layers and tasks, although layer roles and expert redundancy vary with depth and demand varies with difficulty. Existing approaches address only part of this setting: layer-wise allocations are usually determined offline and reused for all tasks, while token-level methods vary expert activation using local routing signals without task-level context. We propose MetaNet, a support-set controller that predicts, for each layer, an expert-retention threshold and a bounded routing bias. The backbone, experts, and router remain frozen. On DeepSeek-MoE-16B-Chat, MetaNet provides a tunable accuracy-expert-activation trade-off. Relative to fixed k=6, a conservative setting activates 3.61 experts on average (40% fewer) and achieves comparable MMLU accuracy (0.489 vs. 0.474), whereas an aggressive setting activates 2.28 experts on average (62% fewer) with accuracy approximately 3.7 percentage points lower. The MMLU-trained controller also transfers to C-Eval without retraining, activating 2.90 experts on average (52% fewer than fixed k=6) at 0.386 accuracy.

cs.CL↗

arXiv2025

Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium gallium zinc oxide (IGZO) channel at temperatures from 300 K down to 4 K is presented. Main observations include: 1) At room temperature (300 K), the devices exhibit a SS of 61 mV/dec, and a low interface trap density (<1011 cm-2), among the best reported values for IGZO devices. 2) A SS saturation around 40 mV/dec is observed between 200 K and 100 K. It is well explained by the electron transport via band tail states with exponential decay (Wt) of 13 meV. 3) At deep-cryogenic temperature, SS increase significantly exceeding 200 mV/dec at 4 K. Such high SS values are actually limited by the measurement current range, confirmed by Id-Vg simulations based on the variable range hopping (VRH) model. This work not only elucidates the SS behavior in amorphous IGZO devices but also provides a deep understanding of the physical mechanisms of electron transport in amorphous semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.

physics.app-ph↗

arXiv2024

TriLoRA: Integrating SVD for Advanced Style Personalization in Text-to-Image Generation

As deep learning technology continues to advance, image generation models, especially models like Stable Diffusion, are finding increasingly widespread application in visual arts creation. However, these models often face challenges such as overfitting, lack of stability in generated results, and difficulties in accurately capturing the features desired by creators during the fine-tuning process. In response to these challenges, we propose an innovative method that integrates Singular Value Decomposition (SVD) into the Low-Rank Adaptation (LoRA) parameter update strategy, aimed at enhancing the fine-tuning efficiency and output quality of image generation models. By incorporating SVD within the LoRA framework, our method not only effectively reduces the risk of overfitting but also enhances the stability of model outputs, and captures subtle, creator-desired feature adjustments more accurately. We evaluated our method on multiple datasets, and the results show that, compared to traditional fine-tuning methods, our approach significantly improves the model's generalization ability and creative flexibility while maintaining the quality of generation. Moreover, this method maintains LoRA's excellent performance under resource-constrained conditions, allowing for significant improvements in image generation quality without sacrificing the original efficiency and resource advantages.

cs.CV↗

arXiv2023

Discovering explicit Reynolds-averaged turbulence closures for turbulent separated flows through deep learning-based symbolic regression with non-linear corrections

This work introduces a novel data-driven framework to formulate explicit algebraic Reynolds-averaged Navier-Stokes (RANS) turbulence closures. Recent years have witnessed a blossom in applying machine learning (ML) methods to revolutionize the paradigm of turbulence modeling. However, due to the black-box essence of most ML methods, it is currently hard to extract interpretable information and knowledge from data-driven models. To address this critical limitation, this work leverages deep learning with symbolic regression methods to discover hidden governing equations of Reynolds stress models. Specifically, the Reynolds stress tensor is decomposed into linear and non-linear parts. While the linear part is taken as the regular linear eddy viscosity model, a long short-term memory neural network is employed to generate symbolic terms on which tractable mathematical expressions for the non-linear counterpart are built. A novel reinforcement learning algorithm is employed to train the neural network to produce best-fitted symbolic expressions. Within the proposed framework, the Reynolds stress closure is explicitly expressed in algebraic forms, thus allowing for direct functional inference. On the other hand, the Galilean and rotational invariance are craftily respected by constructing the training feature space with independent invariants and tensor basis functions. The performance of the present methodology is validated through numerical simulations of three different canonical flows that deviate in geometrical configurations. The results demonstrate promising accuracy improvements over traditional RANS models, showing the generalization ability of the proposed method. Moreover, with the given explicit model equations, it can be easier to interpret the influence of input features on generated models.

physics.flu-dyn↗

arXiv2020

Robust active flow control over a range of Reynolds numbers using an artificial neural network trained through deep reinforcement learning

This paper focuses on the active flow control of a computational fluid dynamics simulation over a range of Reynolds numbers using deep reinforcement learning (DRL). More precisely, the proximal policy optimization (PPO) method is used to control the mass flow rate of four synthetic jets symmetrically located on the upper and lower sides of a cylinder immersed in a two-dimensional flow domain. The learning environment supports four flow configurations with Reynolds numbers 100, 200, 300 and 400, respectively. A new smoothing interpolation function is proposed to help the PPO algorithm to learn to set continuous actions, which is of great importance to effectively suppress problematic jumps in lift and allow a better convergence for the training process. It is shown that the DRL controller is able to significantly reduce the lift and drag fluctuations and to actively reduce the drag by approximately 5.7%, 21.6%, 32.7%, and 38.7%, at $Re$=100, 200, 300, and 400 respectively. More importantly, it can also effectively reduce drag for any previously unseen value of the Reynolds number between 60 and 400. This highlights the generalization ability of deep neural networks and is an important milestone to active flow control.

physics.flu-dyn↗

arXiv2019

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics.

physics.app-ph↗

arXiv2019

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3E7 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

physics.app-ph↗