arXiv subjects

Himani Jawa

Publications and source records attributed to Himani Jawa.

5 recordsLinked to original sources

arXiv2026

Process-Technology Co-optimization for 2D-FETs

We present the first experimental machine learning (ML)-enabled Process-Technology Co-Optimization (PTCO) framework for optimizing 2D transition metal dichalcogenide (TMD) FET fabrication directly from statistically meaningful experimental data rather than pure simulation data. We first introduce a transition voltage metric, VTrans, to quantify the gate voltage required for off-to-on switching and reveal its direct correlation with subthreshold swing (SS), highlighting an overlooked switching characteristic that governs both off-state and on-state performance. By integrating automated metric extraction, multi-objective recipe ranking, and predictive modeling, our framework uncovers hidden process-performance correlations and predicts the performance of unexplored fabrication recipes from limited experimental data. Experimental validation shows close agreement with ML predictions, thus demonstrating the framework's ability to efficiently guide gate stack optimization through iterative experimental feedback.

cond-mat.mes-hall↗

arXiv2026

Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors

Integrating two-dimensional semiconductors such as MoS$_2$ with dielectric materials remains a central challenge for their use in future logic technologies. While seed layers are typically introduced to promote dielectric nucleation and adhesion, we show that they also critically govern charge-transfer doping and, in turn, transistor performance. Back-gated monolayer MoS$_2$ transistors passivated on their top-surface with a Ta-seed/HfO$_x$ dielectric stack were fabricated and characterized electrically and physically using Raman, photoluminescence, and X-ray photoelectron spectroscopies. Threshold voltage and on-current varied strongly with Ta-seed thickness and deposition conditions, and these changes correlated with signatures observed across all spectroscopic probes. The results reveal that the seed layer both introduces disorder into the MoS$_2$ channel and modifies the interfacial charge environment controlling charge transfer between HfO$_x$ and MoS$_2$. Optical spectroscopy shows that on-current tracks seed-induced disorder, whereas X-ray photoelectron spectroscopy indicates that threshold voltage correlates with shifts in the local electrostatic environment associated with interfacial charge transfer. Better performance was obtained with ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions, which limit deposition-induced damage while facilitating charge transfer. These findings identify seed-layer engineering as a key strategy for controlling disorder and interfacial doping in MoS$_2$ devices and establish multimodal spectroscopy as a practical during-fabrication approach for process development and monitoring.

cond-mat.mtrl-sci↗

arXiv2021

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS$_2$ Heterostructure

Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi-level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a key requirement for these applications. This report demonstrates visible-to-near infrared wavelength-driven NPC and PPC, along with reversible switching between the two, in an air stable, high mobility, broadband black phosphorus (BP) field effect transistor (FET) covered with a few layer MoS$_2$ flake. The crossover switching wavelength can be tuned by varying the MoS$_2$ bandgap through its flake thickness and the NPC and PPC photoresponsivities can be modulated using electrostatic gating as well as laser power. Recombination-driven NPC and PPC allows for reversible switching at reasonable time scales of a few seconds. Further, gate voltage-dependent negative persistent photoconductance enables synaptic behavior that is well-suited for optosynaptic applications.

physics.app-ph↗

arXiv2020

Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction

Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first time, an NO2 gas sensor that leverages a gate tunable type II WSe2 (p)/MoS2 (n) heterojunction to realize a 4x enhancement in sensitivity, 8x lower limit of detection and improved dynamic response when compared to an MoS2 FET sensor on the same flake. Comprehensive sensing measurements over a range of analyte concentrations, gate biases and MoS2 flake thicknesses indicate a novel two-fold electrical response to NO2 exposure underlying the enhanced sensitivity of the heterojunction- (i) a series resistance change that leads to an exponential change in thermionic current at high bias, and, (ii) a carrier concentration change that leads to a linear change in interlayer recombination current near zero bias. The heterojunction diode also exhibits fast and tunable recovery under negative gate biasing. All-electrical (gate controlled) sensing and recovery operation at room temperature makes this a simple, low-overhead sensor. The ability to sense tri-nitro toluene (TNT) molecules down to a concentration of 80PPB highlights its potential as a comprehensive chemical sensing platform.

physics.app-ph↗

arXiv2020

Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS$_2$ FETs

Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS$_2$ channels holds significant promise for non-volatile memory applications. However such crossovers have been shown to manifest only at high temperature. In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS$_2$ FETs by using a gate-drain underlap design to induce a differential response from traps at the MoS$_2$-HfO$_2$ channel-gate dielectric interface to applied gate bias. The appearance of interface trap-driven anti-clockwise hysteresis at high gate voltages in underlap FETs can be unambiguously attributed to the presence of an underlap since transistors with and without the underlap region were fabricated on the same MoS$_2$ channel flake. The underlap design also enables room temperature tuning of the anti-clockwise hysteresis window (by 140$\times$) as well as the crossover gate voltage (by 2.6$\times$) with applied drain bias and underlap length. Comprehensive measurements of the transfer curves in ambient and vacuum conditions at varying sweep rates and temperatures (RT, 45 $^\circ$C and 65 $^\circ$C) help segregate the quantitative contributions of adsorbates, interface traps, and bulk HfO$_2$ traps to the clockwise and anti-clockwise hysteresis.

physics.app-ph↗