arXiv subjects

Heinz Pernegger

Publications and source records attributed to Heinz Pernegger.

14 recordsLinked to original sources

arXiv2026

A Data-Driven Fast Simulation Approach for MAPS-based Detectors and their Optimization

A parametric simulation tool for pixel sensors is presented. A realistic pixel response is simulated purely based on measurement input, without requiring detailed knowledge of the underlying manufacturing process. As such, it provides an efficient alternative to the use of Technology Computer-Aided Design simulations, which typically depend on proprietary process information. Due to its parametric approach, the package is fast and thus particularly useful for larger detector systems and high hit rate environments. This work presents measurements, simulation and its validation for the MALTA2 sensor. It is a small collection electrode monolithic active pixel sensor produced in the Tower 180nm Complementary Metal-Oxide-Semiconductor imaging process. Modifications to the sensor's periphery, mainly in the hit merger, are studied in order to optimize the performance for tracking and calorimetry. This optimization is of special interest as part of the MALTA3 sensor redesign in the 65nm Tower Partners Semiconductor Co. process.

physics.ins-det↗

arXiv2026

First results of a Monolithic Active Pixel Sensor with Internal Signal Gain Fully Integrated in a 180 nm CMOS Technology

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the information available, and is essential for pile-up mitigation at high luminosity. The CASSIA sensor project (CMOS Active SenSor with Internal Amplification) focuses on the development of pixel matrices with internal charge multiplication based on monolithic CMOS sensor technologies suitable for application as charged particle tracking and timing detectors. CMOS sensors with in-pixel internal amplification would result in higher signal amplitudes having an improved signal-to-noise ratio, better time resolution and increased sensitivity, making them attractive for high-radiation environments. Their monolithic integration in small pixels reduces the input capacitance of a front-end amplifier and power dissipation making it suitable for fine-pitch low-power detectors. Fast signal rise time due to internal charge amplification improves the response time and timing resolution, all of which makes such a technology attractive for future 4D tracking applications in HEP experiments. This paper presents the first results of the CASSIA sensor, a novel MAPS which uses gain layers fully integrated in a 180nm imaging process to achieve internal signal amplification. In the first measurements presented here we demonstrate the gain behaviour of different pixel implant designs and show that the sensor can be operated with low gain proportional mode as LGAD sensor at lower voltages and as SPAD sensor at higher voltages.

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arXiv2025

X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100$\,$Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100$\,$Mrad and continuous operability throughout the irradiation campaign.

physics.ins-det↗

arXiv2025

Charge calibration of MALTA2, a radiation hard depleted monolithic active pixel sensor

MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and typically low detection threshold of $\sim150\,\mathrm{e^-}$. A precise knowledge of the threshold is crucial to understanding the charge collection in the pixel and specifying the environment for sensor application. A simple procedure is developed to calibrate the threshold to unit electrons making use of a dedicated charge injection circuit and an Fe-55 source with dominant charge deposition of $1600\, \mathrm{e^-}$. The injection voltage is determined which corresponds to the injection under Fe-55 exposure and is the basis for charge calibration. The charge injection circuit incorporates a capacitance with design value of $\mathrm{C_{inj}}=$ 230 aF. Experimentally, the average capacitance value for non-irradiated samples is found to be $\mathrm{C_{inj,exp}}=$ 257 aF. The 12 % divergence motivates the need for the presented precise calibration procedure, which is proposed to be performed for each MALTA2 sensor.

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arXiv2024

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.

physics.ins-det↗

arXiv2023

Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates

MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope.

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arXiv2023

Performance of the MALTA Telescope

MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under test. The telescope system has a dedicated custom readout, online monitoring integrated into DAQ with realtime hit map, time distribution and event hit multiplicity. It hosts a dedicated fully configurable trigger system enabling to trigger on coincidence between telescope planes and timing reference from a scintillator. The excellent time resolution performance allows for fast track reconstruction, due to the possibility to retain a low hit multiplicity per event which reduces the combinatorics. This paper reviews the architecture of the system and its performance during the 2021 and 2022 test beam campaign at the SPS North Area.

hep-ex↗

arXiv2023

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology

Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.

physics.ins-det↗

arXiv2022

Recent results with radiation-tolerant TowerJazz 180 nm MALTA Sensors

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometries. These sensors have a total silicon thickness of between 50-300 $μ$m, implying reduced material budgets and multiple scattering rates for future detectors which utilize such technology. Furthermore, their monolithic design bypasses the costly stage of bump-bonding in hybrid sensors and can substantially reduce detector costs. This contribution presents the latest results from characterization studies of the MALTA2 sensors, including results demonstrating the radiation tolerance of these sensors.

physics.ins-det↗

arXiv2020

DMAPS Monopix developments in large and small electrode designs

LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.

physics.ins-det↗

arXiv2019

Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source

This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous $\mathrm{n^-}$ layer layout and front-end, and extra deep p-well and $\mathrm{n^-}$ gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated.

physics.ins-det↗

arXiv2019

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel sizes larger than approximately forty micrometers. This paper presents the development of concepts of CMOS sensors with a small collection electrode to overcome these limitations, using three-dimensional Technology Computer Aided Design simulations. The studied design uses a 0.18 micrometer process implemented on a high-resistivity epitaxial layer.

physics.ins-det↗

arXiv2019

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.

physics.ins-det↗

arXiv2011

Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 μm thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATLAS pixel read-out systems, before and after irradiation with 24 GeV/c protons. In addition preliminary testbeam results for the tracking efficiency and charge collection, obtained with a SCM, are discussed.

physics.ins-det↗