arXiv subjects

Haoyu Lin

Publications and source records attributed to Haoyu Lin.

6 recordsLinked to original sources

arXiv2026

Molexar: A Unified Multimodal Molecular Foundation Model for Drug Design

Molecular generation is a central challenge in drug discovery, requiring models that explore vast chemical space while satisfying diverse design constraints. We present Molexar, a unified multimodal molecular foundation model built on Fragment-SELFIES, a robust, fragment-aware molecular language with validity-preserving decoding and explicit fragment structure. A pretrained autoregressive decoder learns the Fragment-SELFIES syntax and molecular distribution; supervised fine-tuning (SFT) then trains the same decoder on condition-molecule pairs spanning scalar molecular properties, pharmacophore fingerprints, protein sequences, and binding pockets, injecting each condition by in-place replacement of value-token embeddings so that all generation modes share one autoregressive path. Molexar achieves strong efficiency at a small parameter count while matching or exceeding larger models. The pretrained model reaches 100% validity and high drug-likeness in unconditional and fragment-constrained generation; the SFT model follows single- and multi-property instructions and remains competitive on target-conditioned generation on the CrossDocked2020 test set. On MolGenBench, Molexar further generates molecules with favorable safety and potency. These results establish Molexar as a practical unified foundation for computational chemistry and drug-design workflows.

q-bio.BM↗

arXiv2026

Investigating the intrinsic anomalous Hall effect in MnPt3 topological semimetal

The cubic Cu$_3$Au-type $X$Pt$_3$ family ($X$ = V, Cr, and Mn) is a topological semimetal characterized by anti-crossing gapped nodal lines near the Fermi level, which give rise to significant Berry curvatures and thus to the anomalous Hall effect (AHE). Among the three members, CrPt$_3$ has been experimentally verified to exhibit a large anomalous Hall conductivity (AHC), while its counterparts MnPt$_3$ and VPt$_3$ remain largely unexplored. Here, a series of MnPt$_3$ thin films with varying thicknesses (20--70 nm) was epitaxially grown on the MgO substrates using magnetron sputtering and was systematically investigated by magnetization, electrical resistivity, and Hall resistivity measurements. MnPt$_3$ films undergo a ferromagnetic transition at a Curie temperature $T_\mathrm{C}$, which increases as the film thickness increases, reaching $\sim$ 344 K for the 70-nm-thick film. All the anomalous Hall transport properties of MnPt$_3$ films, including the resistivity, conductivity, and angle, exhibit a strong correlation with their magnetic properties. The scaling analysis suggests that the intrinsic Berry-curvature mechanism dominates the observed AHE, while the extrinsic contributions are much smaller. The intrinsic AHC increases as the film thickness increases, while the extrinsic AHC is thickness-independent. Such an enhanced intrinsic AHC in the MnPt$_3$ films is most likely attributed to the strain effect, implying that it serves as an effective method to tune the electronic band topology in the $X$Pt$_3$ topological semimetal.

cond-mat.str-el↗

arXiv2026

Engineering of Orbital Hybridization: An Exotic Strategy to Manipulate Orbital Current

Current-induced spin-orbit torque (SOT) plays a crucial role in the next-generation spin-orbitronics. Enhancing its efficiency is both fundamentally and practically interesting and remains a challenge to date. Recently, orbital counterparts of spin effects that do not rely on the spin-orbit coupling (SOC) have been found as an alternative mechanism to realize it. This work highlights the engineering of copper oxidation states for manipulating the orbital current and its torque in the CuO$_x$-based heterostructures. The orbital hybridization and thus the orbital-Rashba-Edelstein effect at the CuO$_x$/Cu interfaces are significantly enhanced by increasing the copper oxidation state, yielding a torque efficiency that is almost ten times larger than the conventional heavy metals. The Cu$_4$O$_3$/Cu interface, rather than the widely accepted CuO/Cu interface, is revealed to account for the enhanced SOT performance in the CuO$_x$-based heterostructures. In addition, the torque efficiency can be alternatively switched between high and low thresholds through the redox reaction. The current results establish an exotic and robust strategy for engineering the orbital current and SOT for spin-orbitronics, which applies to other weak-SOC materials.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous Hall effect and rich magnetic phase diagram of Mn$_{100-x}$Rh$_{x}$ epitaxial films

A series of Mn$_{100-x}$Rh$_x$ ($20 \le x \le 50$) thin films were epitaxially grown on the MgO substrate using magnetron sputtering technique, and were systematically investigated by magnetization, longitudinal electrical resistivity, and transverse Hall resistivity. After optimizing the growth conditions, phase-pure Mn$_{100-x}$Rh$_x$ films with a cubic CsCl-type structure were obtained, and their magnetic phase diagram was built. The manipulation of Rh content leads to a rich magnetic phase diagram, where three different regimes can be identified: for $x < 40$, Mn$_{100-x}$Rh$_x$ films undergo a ferromagnetic (FM) transition below $T_\mathrm{C} \approx$ 330-350 K; for $40 \le x \le 45$, in addition to the FM transition at $T_\mathrm{C} \approx$ 200 K, Mn$_{100-x}$Rh$_x$ films undergo a FM-to-antiferromagnetic (AFM) transition at $T_\mathrm{N} \approx$ 120 K; finally for $x > 45$, only one AFM transition at $T_\mathrm{N} \approx$ 150 K can be tracked. All the Mn$_{100-x}$Rh$_x$ films exhibit distinct anomalous Hall effect in their magnetically ordered state, which is most likely due to the intrinsic Berry-curvature mechanism. In addition, all the anomalous Hall transport properties, including the resistivity, conductivity, and angle exhibit a strong correlation with the magnetic properties of Mn$_{100-x}$Rh$_x$ films, which become most evident for $x$ = 35. Our systematic investigations suggest a strong correlation between magnetic properties and electronic band topology in Mn$_{100-x}$Rh$_x$ films, highlighting their great potential for AFM spintronics.

cond-mat.str-el↗

arXiv2024

DeepRLI: A Multi-objective Framework for Universal Protein--Ligand Interaction Prediction

Protein (receptor)--ligand interaction prediction is a critical component in computer-aided drug design, significantly influencing molecular docking and virtual screening processes. Despite the development of numerous scoring functions in recent years, particularly those employing machine learning, accurately and efficiently predicting binding affinities for protein--ligand complexes remains a formidable challenge. Most contemporary methods are tailored for specific tasks, such as binding affinity prediction, binding pose prediction, or virtual screening, often failing to encompass all aspects. In this study, we put forward DeepRLI, a novel protein--ligand interaction prediction architecture. It encodes each protein--ligand complex into a fully connected graph, retaining the integrity of the topological and spatial structure, and leverages the improved graph transformer layers with cosine envelope as the central module of the neural network, thus exhibiting superior scoring power. In order to equip the model to generalize to conformations beyond the confines of crystal structures and to adapt to molecular docking and virtual screening tasks, we propose a multi-objective strategy, that is, the model outputs three scores for scoring and ranking, docking, and screening, and the training process optimizes these three objectives simultaneously. For the latter two objectives, we augment the dataset through a docking procedure, incorporate suitable physics-informed blocks and employ an effective contrastive learning approach. Eventually, our model manifests a balanced performance across scoring, ranking, docking, and screening, thereby demonstrating its ability to handle a range of tasks. Overall, this research contributes a multi-objective framework for universal protein--ligand interaction prediction, augmenting the landscape of structure-based drug design.

q-bio.BM↗

arXiv2023

Absence of topological Hall effect in Fe$_x$Rh$_{100-x}$ epitaxial films: revisiting their phase diagram

A series of Fe$_x$Rh$_{100-x}$ ($30 \leq x \leq 57$) films were epitaxially grown using magnetron sputtering, and were systematically studied by magnetization-, electrical resistivity-, and Hall resistivity measurements. After optimizing the growth conditions, phase-pure Fe$_{x}$Rh$_{100-x}$ films were obtained, and their magnetic phase diagram was revisited. The ferromagnetic (FM) to antiferromagnetic (AFM) transition is limited at narrow Fe-contents with $48 \leq x \leq 54$ in the bulk Fe$_x$Rh$_{100-x}$ alloys. By contrast, the FM-AFM transition in the Fe$_x$Rh$_{100-x}$ films is extended to cover a much wider $x$ range between 33 % and 53 %, whose critical temperature slightly decreases as increasing the Fe-content. The resistivity jump and magnetization drop at the FM-AFM transition are much more significant in the Fe$_x$Rh$_{100-x}$ films with $\sim$50 % Fe-content than in the Fe-deficient films, the latter have a large amount of paramagnetic phase. The magnetoresistivity (MR) is rather weak and positive in the AFM state, while it becomes negative when the FM phase shows up, and a giant MR appears in the mixed FM- and AFM states. The Hall resistivity is dominated by the ordinary Hall effect in the AFM state, while in the mixed state or high-temperature FM state, the anomalous Hall effect takes over. The absence of topological Hall resistivity in Fe$_{x}$Rh$_{100-x}$ films with various Fe-contents implies that the previously observed topological Hall effect is most likely extrinsic. We propose that the anomalous Hall effect caused by the FM iron moments at the interfaces nicely explains the hump-like anomaly in the Hall resistivity. Our systematic investigations may offer valuable insights into the spintronics based on iron-rhodium alloys.

cond-mat.mtrl-sci↗