arXiv subjects

Haoran Mu

Publications and source records attributed to Haoran Mu.

15 recordsLinked to original sources

arXiv2026

Oxidation of Tantalum Nano-Film by Microwave Exposure

Oxidation and ablation of 200 nm tantalum films were carried out by three routes: (i) femtosecond (fs-)laser direct write, (ii) high-temperature annealing (HTA) in a tube furnace, and (iii) annealing in a 2.45 GHz microwave cavity. Complete conversion of the 200 nm Ta layer into 409 nm of Ta2O5 required one hour at 600 C in the furnace, but only minutes at ~ 50 W of microwave power. Fs-laser (515 nm/200 fs) oxidation of the Ta nano-film set in at an average single-pulse fluence of ~ 0.1 J/cm2 under strong pulse-to-pulse overlap (900 pulses per focal spot), i.e. within a narrow window bounded from above by the onset of ablation. Under microwave annealing, both the cavity resonance frequency and the quality factor Q changed markedly at the metal-to-oxide transition, reflecting the collapse of the real and imaginary parts of the permittivity at 2.45 GHz. This dielectric contrast turns the cavity into a sensor: the oxidation can be followed in real time from the shift of the cavity resonance, providing a non-invasive, in-situ diagnostic tool.

cond-mat.mtrl-sci↗

arXiv2026

Diamond membranes: platform for photonic and opto-mechanical applications

Diamond 1 - 10 micrometers thick membranes are platform for photonic, quantum and opto-mechanic devices with applications across UV-IR spectral ranges. IR characterization of diamond gratings in reflection and transmission showed a change of the IR absorbance dichroism between positive and negative when the grating period was 1-2 wavelengths (free space) including inside the region of the intrinsic diamond absorbance. Femtosecond laser cutting of micrometers-wide and mm-long structures are demonstrated by steps of carbonization > 0.4 J/cm2/pulse (1030 nm/200 fs) and oxidation of diamond membranes. Light intensity distribution inside form-birefringent diamond structure was modeled for a scaled-down structure and wavelength to reveal characteristic interference patterns for different polarizations.

physics.optics↗

arXiv2026

UV-enhanced SEM: towards orientation and electron work function imaging

Deep-UV ~ 250 nm (4.96 eV) tilted in-situ co-illumination of the sample under imaging by scanning electron microscope (SEM) is developed at a robust and practical instrument level. Precise mechanical control of the lateral position and tilt angle (within 6.5$^\circ$ from a 42$^\circ$ baseline) of the UV-C LED source is achieved using mechanisms external to the vacuum chamber. The incorporated linear polariser (for s-pol. mode illumination) with external polarisation plane adjustment allows for modulation and tuning of tangential $E^{(t)}$ and normal $E^{(n)}$ electric field components and their enhancement for controlled directional electron emission from the surface of the sample. Numerical modelling of E-field enhancement corroborates the expected enhancement in the production of secondary electrons. This modality of SEM imaging does not require metal coatings, preserving sample integrity for subsequent analysis. The feasibility of having linearly polarised incident UV-C light with azimuthal orientation control in $(s,p)$-plane is modeled and discussed.

physics.optics↗

arXiv2026

Olivine annealed up to 1500 C: changes traced by polarised IR reflectance and magnetization

Spectral analysis at the infrared (IR) spectral range is introduced with assignment of synthetic red-green-blue (RGB) colours defined by adjustable wavelength and bandwidth. The RGB bands were selected at the phase-specific absorbance A or reflectance R bands of olivine and related materials, which can be formed via high temperature annealing (HTA) of natural minerals up to 1500 C. Natural olivines were collected from quarry at volcanic site in Mortlake, Victoria, Australia and spectrally characterised during IR-THz spectroscopy beamtime experiments at Australian Synchrotron. Phase changes in HTA natural olivines were traced by correlation of optical IR 4-polarisation spectroscopy, X-ray energy dispersive spectroscopy and magnetisation. After HTA, olivine samples were magnetized via precipitation of Fe-rich oxides.

physics.geo-ph↗

arXiv2026

Nanoscale Surface Analysis of High Entropy Alloy

Nanoscale surface analysis of 1 micrometer thick high entropy alloys (HEAs) was carried out using nano-IR for hyperspectral imaging and single point spectroscopy in the 700-1700 1/cm spectral range. Nano-IR is based on the detection of scattered light from an oscillating metal coated nano-tip in one of the arms of the Fourier transform infrared spectrometer and has a resolution defined by the tip radius of the probe, 20 nm, regardless of the excitation wavelength. HEA CuPdAgPtAu showed an absorption and reflection increase at 900-1100 1/cm band, which is consistent with Drude-Lorenz modeling of permittivity, however, could also signify oxide formation as tested by X-ray photoelectron spectroscopy of CuPdAgPtAu and CrFeCoNiCuMo. Realization of polarization analysis for nano-IR nano-spectroscopy in the plane perpendicular to the sample's surface is discussed and modeled. The currently available modality of surface analysis with the excitation-detection mode of the p-pol. antenna can be extended to full 3D analysis of the orientational dependencies of local absorbance and refractive index.

physics.optics↗

arXiv2026

High Entropy Alloy under Shock Compression: Optical-Pump X-Ray-Probe

High entropy alloys (HEAs) are multi-principal-element alloys designed for tailorable mechanical performance and have been attracting significant engineering interest, yet their fundamental behaviour under extreme dynamic conditions, such as shock loading, remains unexplored. Here, we report laser-shock experiments on two different types of 1-micrometers-thick HEA microfilms, CuPdAgPtAu and CrFeCoNiCuMo, on 25-micrometers-thick black-Kapton ablator driven by a high intensity laser pulse (532 nm, 5 ns, 16 J, 0.5-mm diameter focal spot) and probed by an X-ray free electron laser (XFEL) pulse (12 keV, 7 fs). Time-resolved X-ray diffraction (XRD) shows the formation of a transient phase with a lattice compression up to 5.1% of the CuPdAgPtAu HEA along the (111) plane; this transient compressed phase existed for 0.3 ns. The impedance matching Hugoniot analysis estimated a shock pressure of 55 +/- 6 GPa in the HEA film, while Au- and Fe-based equations of state (EoS) modelling predict 80 GPa (0.8 MBar) at the free HEA surface. The free HEA surface reached maximum velocities of ~ 5 km/s as recorded from in situ monitoring with the velocity interferometry system for any reflector (VISAR) imaging. These initial HEA results show the suitability of HEA sample preparation and XFEL-based XRD characterisation under extreme shock loading, and are promising for experimental determination of the EoS of this emerging class of materials (beamtime proposal No.: 2024A8503 for a 6-hour preliminary experiment).

cond-mat.mtrl-sci↗

arXiv2026

Structure orientation determined in transmission and reflection: q-plate

Determination of orientation in the imaged sample/scene has a large application potential when the anisotropy of properties is analysed, usually, under a linearly polarised illumination. This study combined several improvements of microscopy imaging: use of an incoherent white illumination source (a lamp) with a spectral filter to define a spectral window, a plastic circular polariser to image with circularly polarised light (instead of linear), and a 4-pol. camera with integrated polarisers for simultaneous acquisition of images at four pi/4-azimuth shifts. In the transmission mode, a high-fidelity readout of form birefringent optical elements, q-plates, was achieved using a fitting procedure based on the analytical expression of S0 (intensity) Stokes parameters at the pixel level. In the reflection mode, the S0 fit was used to determine the azimuth orientation of the q-plates, as well as a generic Amp x cos(2Q1 - 2Q0) + Offset fit (at pixel level) applied to images taken at four Q1 azimuths. The 4-pol. analysis in reflection under circularly polarised illumination is discussed.

physics.optics↗

arXiv2026

Burst-mode fs-laser direct writing for full-thickness oxidation of Ta thin films

Direct fs-laser (1030~nm/200~fs) write of a throughout oxide Ta$_{2}$O$_{5}$ on a 200~nm Ta film was achieved using a combined ps- and ns- burst mode (Burst-in-Burst or BiB) of fs-pulse exposure at a high 0.6~MHz repetition rate. Few micrometers-wide lines were formed at the center of 12~$\mu$m focal spot by controlled oxidation without ablation. The oxidized regions were flat and optically transparent. Wavelength-scale self-organized ripples of oxidized Ta$_{2}$O$_{5}$ sub-1~$\mu$m gratings were recorded by rastering a $1\times 1$~mm$^2$ area. The oxidized ripples with periodic pattern $\sim wavelength$ were aligned with the polarization of the writing beam. Energy deposition in the burst-mode oxidation is discussed by comparing 200~fs and 20~ps BiB-mode writing modes. The presented strategy of self-guided oxidation with heat deposition by BiB fs-laser opens an opportunity for debris-free and annealing-free oxidation on a sub-wavelength scale.

physics.optics↗

arXiv2025

Ablation of black-Si by (Gauss-)Bessel femtosecond laser beams

Laser machining and modification of black-Si (b-Si) by femtosecond laser Gaussian (G-) and Gauss-Bessel (GB-) beams are compared at a wavelength of 1030 nm. The GB-beam was generated using a diffractive axicon lens and 10x demagnification optics. It was found that modification of b-Si well below (a factor 50x) the single pulse ablation fluence of 0.2 J/cm2 was possible, corresponding to ablation/melting of nano-needles. The width of modification was almost independent of pulse energy/fluence and had a width of 1/e2-intensity profile at the melting regime. For the GB-beam, the smallest width of laser modification at 0.2 J/cm2 threshold (at the center core) was close to the FWHM of the core of the GB-beam. The aspect ratio of the ablated groove on the surface of b-Si made by GB-beam was twice as large - up to 8 - compared to that achievable with G-beam, and it was at a lower fluence of 4 J/cm2 (50x reduction). Reflectivity of two-side nanotextured b-Si on plasma-thinned 70-micrometers thick Si was strongly reduced in the near-IR range, reaching transmittance >95% at 1.7-2.1 micrometres wavelengths.

physics.optics↗

arXiv2025

Scalable, universal and conformal direct electrodes microprinting for high-performance van der Waals-integrated two-dimensional electronics and flexible applications

Two-dimensional (2D) materials with extraordinary electrical properties, hold promising for large-scale, flexible electronics. However, their device performance could be hindered due to the excessive defects introduced via traditional electrode integration processes. Transfer printing techniques have been developed for van der Waals contacts integration, while existing techniques encounter limitations in achieving conformal electrode transfer and compatibility with flexible devices. Here we introduce a highly conformal microprinting technique utilizing polypropylene carbonate (PPC)/Polyvinyl alcohol (PVA) copolymer, which enables successful transfer of wafer-scale, micropatterned electrodes onto diverse substrates, including those with complex geometries. This technique, implemented with 2D transition metal dichalcogenides (TMDCs), yields 2D field-effect transistors with near-ideal ohmic contacts, and a record-high carrier mobility up to 334 cm2 V-1 s-1 for a WSe2 device. Furthermore, we fabricated transistor arrays on MoS2 thin film, which show uniform device performance. We also present the flexible MoS2 transistors that not only achieve a high electron mobility of up to 111 cm2 V-1 s-1 but also exhibit outstanding mechanical robustness. Our findings represent a significant leap forward in the fabrication of flexible 2D electronics, paving the way for numerous emerging technologies.

physics.app-ph↗

arXiv2025

Ultrathin Ga$_2$O$_3$ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor

The development of two-dimensional (2D) transition metal dichalcogenides (TMDs) based transistors has been constrained by high contact resistance and inadequate current delivery, primarily stemming from metal-induced gap states and Fermi level pinning. Research into addressing these challenges is essential for the advancing 2D transistors from laboratory experiments to industrial-grade production. In this work, we present amorphous Ga$_2$O$_3$ as a novel tunneling contact layer for multilayer WS2-based field-effect transistors (FETs) to enhance electrical performance. The addition of this innovative tunneling layer avoid Schottky barrier forming while finally change into a tunneling barrier with the barrier height to just 3.7 meV, near-ideal ohmic contacts. This approach effectively reduces contact resistance to only 2.38 k$\Omega\,\mu$m and specific contact resistivity as low as $3 \times 10^{-5}$ $\Omega$cm$^2$. A record-high electron mobility of 296 cm$^2$ V$^{-1}$ s$^{-1}$ and ON-OFF ratio over 106 are realized for WS$_2$ transistor at room temperature. Compared to other tunneling materials, ultrathin Ga$_2$O$_3$ layer offers scalability, cost-efficient production and broad substrate compatibility, making it well-suited for seamless integration with industrial wafer-scale electronics. A robust device performance remains highly consistent in a large-scale transistor array fabricated on $1.5\times 1.5$ cm$^2$ chips, with the average mobility closing to 200 cm$^2$ V$^{-1}$ s$^{-1}$. These findings establish a new benchmark for contact performance in 2D transistors and prove the potential of tunneling contact engineering in advancing high-performance, scalable 29 pelectronics with promising applications in quantum computing and communication.

cond-mat.mes-hall↗

arXiv2024

3D Free-Form Optical Lens -- Miniaturised Fibre Couplers for Astrophotonics

In astronomy, multi-object spectrographs employ fibre positioning robots to couple the light from multiple astronomy sources (stars or galaxies) into multiple multi-mode fibres, which are distributed across the focal plane of the telescope. These fibres transport the celestial light to the entrance slit of a spectrograph (or bank of spectrographs) for analysis. For any multi-object system mm-scale opto-mechanical solutions are required to couple the telescope light efficiently into the fibre. We demonstrate a unique micro-optics solution to replace current optical fibre couplers. Specifically, we target technology on board the Keck telescope's FOBOS - Fibre-Optic Broadband Optical Spectrograph - which operates at UV to IR spectral ranges. For spectrally broad UV-IR band operation we use glass and crystals: fused silica, crystalline quartz (transparency 0.16 - 2 micrometers), sapphire Al2O3 (0.2 - 5 micrometers), CaF2 (0.2-7 micrometers), and BaF2 (0.2-10 micrometers). The miniaturised micro-coupler is monolithic, with the entire light path contained within glass or crystal, seamlessly extending to the fibre entrance, which is laser-machined and precisely aligned with the optical axis.

astro-ph.IM↗

arXiv2024

Bessel-beam direct-write of the etch-mask in a nano-film of alumina for high-efficiency Si solar cells

Large surface area applications such as high-efficiency > 26% solar cells require surface patterning with 1-10 micrometers periodic patterns at high fidelity over 1-10 cm^2 areas (before up scaling to 1 m^2) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Here we show a pathway to high-resolution sub-1 micrometer etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam was used to alleviate the required high surface tracking tolerance for ablation of 0.3-0.8 micrometer diameter holes in ~40 nm alumina Al2O3-mask at high writing speed, 7.5 cm/s; a patterning rate 1 cm^2 per 20 min. The plasma etching protocol was optimised for a zero-mesa formation of photonic crystal (PhC) trapping structures and smooth surfaces at the nanoscale level. Scaling up in area and throughput of the demonstrated approach is outlined.

physics.optics↗

arXiv2019

Evanescent Field Functional Cu3-xP Nanoparticles as Effective Saturable Absorbers with high Repeatability for Femtosecond Soliton Pulse generation

Recently, a new emerging field about heavily-doped colloidal plasmonic nanocrystals (NCs) has attracted great attention due to their lower and expediently adjustable free carrier densities, lower and tunable LSPR band in the spectral range from NIR to MIR and higher optical nonlinearity. These new kinds of plasmonic materials will show huge potential and opportunities for nonlinear optical applications, such as ultrafast switching, nonlinear sensing and pulse laser generation. In this work, we demonstrate that high-quality mode-locking and Q-switching pulses at 1560 nm can both be generated by using controllable concentration of Cu3-xP NCs solution and fabricating evanescently interacted saturable absorbers. Furthermore, the plasmonic NCs material has good reproduction for fabricating SA devices and promising potential for large-scale industrial production. Our results may attract great attention for further investigations of heavily-doped plasmonic NCs as next generation, cheap and solution-processed element for fascinating applications in optoelectronic devices.

physics.app-ph↗

arXiv2015

Black Phosphorus-Polymer Composites for Pulsed Lasers

Black phosphorus is a very promising material for telecommunication due to its direct bandgap and strong resonant absorption in near-infrared wavelength range. However, ultrafast nonlinear photonic applications relying on the ultrafast photo-carrier dynamics as well as optical nonlinearity in black phosphorus remain unexplored. In this work, we investigate nonlinear optical properties of solution exfoliated BP and demonstrate the usage of BP as a new saturable absorber for high energy pulse generation in fiber laser. In order to avoid the oxidization and degradation of BP, we encapsulated BP by polymer matrix which is optically transparent in the spectrum range of interest to form a composite. Two fabrication approaches were demonstrated to produce BP-polymer composite films which were further incorporated into fiber laser cavity as nonlinear media. BP shows very fast carrier dynamics and BP-polymer composite has a modulation depth of 10.6%. A highly stable Q-switched pulse generation was achieved and the single pulse energy of ~194 nJ was demonstrated. The ease of handling of such black phosphorus-polymer composite thin films affords new opportunities for wider applications such as optical sensing, signal processing and light modulation.

cond-mat.mtrl-sci↗