arXiv subjects

Hangdong Wang

Publications and source records attributed to Hangdong Wang.

At least 19 recordsLinked to original sources

arXiv2026

Large magnetoresistance and weak-antilocalization in the nodal-line semimetal VP2

After growing successfully high quality VP$_2$ single crystals, we studied systematically their longitudinal $\rho_{xx}(T)$ and Hall resistivity $\rho_{yx}(T)$ at various magnetic fields, combining the electronic band and Fermi surface (FS) calculations. Band calculations reveal that VP$_2$ is a type-II nodal-line semimetal, evidenced by the Hall resistivity measurements. It is found that the magnetoresistance (MR) at higher magnetic fields exhibits a linear behavior and does not show any sign of saturation, reaching 170\% at 40 K up to 9 T, which is determined by the intrinsic electronic structure and dominated by the Lorenz force, demonstrated by the resistivity anisotropy measurements and the numerical simulations. We also found that the existence of small amount magnetic impurities (V$^{4+}$, $S=1/2$, 2.24\%) results in Kondo effect emerging in $\rho_{xx}(T)$, the conductivity at lower magnetic fields exhibits a typical weak anti-localization (WAL) behavior. These results illustrate that VP$_2$ is a platform to study the electronic transport properties of a topological material containing magnetic impurities.

cond-mat.str-el↗

arXiv2025

Topological nontrivial berry phase in altermagnet CrSb

The study of topological properties in magnetic materials has long been one of the forefront research areas in condensed matter physics. CrSb, as a prototypical candidate material for altermagnetism, has attracted significant attention due to its unique magnetic properties. This system provides a novel platform for exploring the intrinsic relationship between altermagnetic order and exotic topological states. In this study, we combine systematic electrical transport experiments with first-principles calculations to investigate the possible realization mechanisms of topological semimetal states in CrSb and their manifestations in quantum transport phenomena. Our high field magneto-transport measurements reveal that the magnetoresistance of CrSb exhibits no sign of saturation up to 35 T, following a distinct power-law dependence with an exponent of 1.48. The nonlinear Hall resistivity further indicates a multiband charge transport mechanism. Under high magnetic fields, we observe pronounced Shubnikov-de Haas (SdH) quantum oscillations and discernible Zeeman-effect-induced band splitting at 1.6 K. Systematic Fermi surface and band calculations combined with Berry phase analysis confirm the nontrivial topological character of this material (with a Berry phase approaching {\pi}). These findings not only provide crucial experimental evidence for understanding the electronic structure of CrSb, but also establish an important foundation for investigating topological quantum states in altermagnets.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous Hall and Nernst effects in the Two-Dimensional ferromagnetic metal FePd2Te2

The transverse thermoelectric effect enables simpler, more flexible thermoelectric devices by generating electricity perpendicular to heat flow, offering promising solutions for waste heat recovery and solid-state cooling applications. Here, we report a striking observation of zero-field anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) below TC in the two-dimensional metallic magnet FePd2Te2. The anomalous Nernst signal Syx^A peaks a maximum value of 0.15 {\mu}V/K at 100 K, much larger than that of conventional FM materials. Remarkably, the derived ratio alpha_ij/sigma_ij in FePd2Te2 approaches the fundamental limit of 86 {\mu}V/K. Our findings suggest a dominant Berry curvature contribution to the ANE. The observed giant zero-field anomalous Nernst response in 2D FePd2Te2 not only advances fundamental understanding of transverse thermoelectricity in layered magnets, but also provides this material as a promising candidate for practical thermoelectric spintronic applications.

cond-mat.str-el↗

arXiv2024

Universal Scaling Behavior of Transport Properties in Non-Magnetic RuO$_{2}$

As a prototypical altermagnet, RuO$_{2}$ has been subject to many controversial reports regarding its magnetic ground state and the existence of crystal Hall effects. We obtained high-quality RuO$_{2}$ single crystal with a residual resistivity ratio (RRR = 152), and carefully measured its magnetization, longitudinal resistivity ($\rho_{xx}$) and Hall resistivity ($\rho_{yx}$) up to 35 T magnetic field. We also calculated its electronic band, Fermi surface, and conducted numerical simulations for its transport properties. It was found that no magnetic transition occurs below 400 K, and that all the transport properties are consistent with the numerical simulations results, indicating that the magnetotransport properties originate from the intrinsic electronic structures and are dominated by the Lorentz force. Particularly, no crystal Hall effects were observed in our RuO$_{2}$ samples and both magnetoresistance and Hall resistivity follow scaling behavior. These results demonstrate that RuO$_{2}$ is a typical semimetal, rather than an altermagnet.

cond-mat.mtrl-sci↗

arXiv2024

Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb

The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi surface (FS) calculations, as well as the magneto-transport property numerical simulations. An antiferromagnetic transition occurring at $T_{N}$ = 712 K was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multi-band structure, rather than an anomalous Hall effect (AHE). Especially, the scaling behavior in Hall resistivity is first observed within an AM material. These findings demonstrate that the magneto-transport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force.

cond-mat.mtrl-sci↗

arXiv2022

Superconductivity in the nodal-line compound La$_3$Pt$_3$Bi$_4$

Owing to the specific topological states in nodal-line semimetals, novel topological superconductivity is expected to emerge in these systems. In this letter, by combination of the first-principles calculations and resistivity, susceptibility and specific heat measurements, we demonstrate that La$_3$Pt$_3$Bi$_4$ is a topologically nontrivial nodal-ring semimetal protected by the gliding-mirror symmetry even in the presence of spin-orbit coupling. Meanwhile, we discover bulk superconductivity with a transition temperature of $\sim$1.1 K, and an upper critical field of $\sim$0.41 T. These findings demonstrate that La$_3$Pt$_3$Bi$_4$ provides a material platform for studying novel superconductivity in the nodal-ring system.

cond-mat.supr-con↗

arXiv2022

Superconductivity in TlBi$_2$ with a large Kadowaki-Woods ratio

In this article, the superconducting and normal state properties of TlBi$_2$ with the AlB$_2$-type structure were studied by the resistivity, magnetization and specific heat measurements. It was found that bulk superconductivity with $T_{C}$ = 6.2 K emerges in TlBi$_2$, which is a phonon-mediated $s$-wave superconductor with a strong electron-phonon coupling ($\lambda$$_{ep}$ = 1.38) and a large superconducting gap ($\Delta_{0}$/$k_{B}T_{C}$ = 2.25). We found that the $\rho$($T$) exhibits an unusual $T$-linear dependence above 50 K, and can be well described by the Fermi-liquid theory below 20 K. Interestingly, its Kadowaki-Woods ratio $A/\gamma^{2}$ [9.2$\times$10$^{-5}$ $\mu\Omega$ cm(mol K$^{2}$/mJ)$^{2}$] is unexpectedly one order of magnitude larger than that obtained in many heavy Fermi compounds, although the electron correlation is not so strong.

cond-mat.supr-con↗

arXiv2021

Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure

Compounds with the A15 structure have attracted extensive attention due to their superconductivity and nontrivial topological band structure. We have successfully grown Nb$_3$Sb single crystals with a A15 structure and systematically measured the longitudinal resistivity, Hall resistivity and quantum oscillations in magnetization. Similar to other topological trivial/nontrivial semimetals, Nb$_3$Sb, exhibits large magnetoresistance (MR) at low temperatures (717$\%$, 2 K and 9 T), unsaturating quadratic field dependence of MR and up-turn behavior in $\rho_{xx}$(\emph{T}) curves under magnetic field, which is considered to result from a perfect hole-electron compensation, as evidenced by the Hall resistivity measurements. The nonzero Berry phase obtained from the de-Hass van Alphen (dHvA) oscillations demonstrates that Nb$_3$Sb is topologically nontrivial. These results indicate that Nb$_{3}$Sb superconductor is also a semimetal with large MR and nontrivial Berry phase, indicating that Nb$_{3}$Sb may be another platform to search for Majorana zero-energy mode.

cond-mat.supr-con↗

arXiv2021

Extremely large magnetoresistance in the "ordinary" metal ReO3

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS) calculations with the Hall resistivity and de Haas-Van Alphen (dHvA) oscillation measurements, we studied the anisotropy of magnetoresistance (MR) of ReO$_3$ with a simple cubic structure, an "ordinary" nonmagnetic metal considered previously. We found that ReO$_3$ exhibits almost all the characteristics of XMR semimetals: the nearly quadratic field dependence of MR, a field-induced upturn in resistivity followed by a plateau at low temperatures, high mobilities of charge carriers. It was found that for magnetic field \emph{H} applied along the \emph{c} axis, the MR exhibits an unsaturated \emph{H}$^{1.75}$ dependence, which was argued to arise from the complete carrier compensation supported by the Hall resistivity measurements. For \emph{H} applied along the direction of 15$^\circ$ relative to the \emph{c} axis, an unsaturated \emph{H}$^{1.90}$ dependence of MR up to 9.43~$\times$~$10^3$$\%$ at 10~K and 9~T was observed, which was explained by the existence of electron open orbits extending along the $k_{x}$ direction. Two mechanisms responsible for XMR observed usually in the semimetals occur also in the simple metal ReO$_3$ due to its peculiar FS (two closed electron pockets and one open electron pocket), once again indicating that the details of FS topology are a key factor for the observed XMR in materials.

cond-mat.str-el↗

arXiv2020

Bulk Superconductivity in the Dirac Semimetal TlSb

A feasible strategy to realize the Majorana fermions is searching for a simple compound with both bulk superconductivity and Dirac surface states. In this paper, we performed calculations of electronic band structure, the Fermi surface and surface states, as well as measured the resistivity, magnetization, specific heat for TlSb compound with a CsCl-type structure. The band structure calculations show that TlSb is a Dirac semimetal when spin-orbit coupling is taken into account. Meanwhile, we first found that TlSb is a type-II superconductor with $T_c$ = 4.38 K, $H_{c1}$(0) = 148 Oe, $H_{c2}$(0) = 1.12 T and $\kappa_{GL}$ = 10.6, and confirmed it to be a moderately coupled s-wave superconductor. Although we can not determine which bands near the Fermi level $E_F$ to be responsible for superconductivity, its coexistence with the topological surface states implies that TlSb compound may be a simple material platform to realize the fault-tolerant quantum computations.

cond-mat.supr-con↗

arXiv2020

Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity rhoxx(T,H), Hall resistivity rhoxy(T,H) and quantum oscillations of the magnetization as a function of temperature at various magnetic fields for MoO2 with monoclinic crystal structure. The band structure calculations show that MoO2 is a nodal-line semimetal when spin-orbit coupling is ignored. It was found that a large magnetoresistance reaching 5.03x10^4% at 2 K and 9 T, its nearly quadratic field dependence and a field-induced up-turn behavior of rhoxx(T), the characteristics common for many topologically non-trivial as well as trivial semimetals, emerge also in MoO2. The observed properties are attributed to a perfect charge-carrier compensation, evidenced by both calculations relying on the Fermi surface topology and the Hall resistivity measurements. Both the observation of negative magnetoresistance for magnetic field along the current direction and the non-zero Berry phase in de Haas-van Alphen measurements indicate that pairs of Weyl points appear in MoO2, which may be due to the crystal symmetry breaking. These results highlight MoO2 as a new platform materials for studying the topological properties of oxides.

cond-mat.mtrl-sci↗

arXiv2020

Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal

In this paper, the magnetic and transport properties were systematically studied for EuAg$_4$As$_2$ single crystals, crystallizing in a centrosymmetric trigonal CaCu$_4$P$_2$ type structure. It was confirmed that two magnetic transitions occur at $\textit{T}$$_{N1}$ = 10 K and $\textit{T}$$_{N2}$ = 15 K, respectively. With the increasing field, the two transitions are noticeably driven to lower temperature. At low temperatures, applying a magnetic field in the $\textit{ab}$ plane induces two successive metamagnetic transitions. For both $\textit{H}$ $\parallel$ $\textit{ab}$ and $\textit{H}$ $\parallel$ $\textit{c}$, EuAg$_4$As$_2$ shows a positive, unexpected large magnetoresistance (up to 202\%) at low fields below 10 K, and a large negative magnetoresistance (up to -78\%) at high fields/intermediate temperatures. Such anomalous field dependence of magnetoresistance may have potential application in the future magnetic sensors. Finally, the magnetic phase diagrams of EuAg$_{4}$As$_{2}$ were constructed for both $\textit{H}$ $\parallel$ $\textit{ab}$ and $\textit{H}$ $\parallel$ $\textit{c}$.

cond-mat.mtrl-sci↗

arXiv2020

Local Structure of Mott Insulating Iron Oxychalcogenides La$_{2}$O$_{2}$Fe$_{2}$O$M$$_{2}$ ($M$ = S, Se)

We describe the local structural properties of the iron oxychalcogenides, La$_2$O$_2$Fe$_2$O$M_2$ ($M$ = S, Se), by using pair distribution function (PDF) analysis applied to total scattering data. Our results of neutron powder diffraction show that $M$ = S and Se possess similar nuclear structure at low and room temperatures. The local crystal structures were studied by investigating deviations in atomic positions and the extent of the formation of orthorhombicity. Analysis of the total scattering data suggests that buckling of the Fe$_2$O plane occurs below 100 K. The buckling may occur concomitantly with a change in octahedral height. Furthermore, within a typical range of 1-2 nm, we observed short-range orthorhombic-like structure suggestive of nematic fluctuations in both of these materials.

cond-mat.str-el↗

arXiv2020

Linear and quadratic magnetoresistance in the semimetal SiP2

Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this article, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP$_{2}$ which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field, $H$, is applied along the $a$ axis, the MR exhibits an unsaturated nearly linear $H$ dependence, which was argued to arise from incomplete carriers compensation. For the $H$ $\parallel$ [101] orientation, an unsaturated nearly quadratic $H$ dependence of MR up to 5.88 $\times$ 10$^{4}$$\%$ (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the $k_{x}$ direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.

cond-mat.mtrl-sci↗

arXiv2020

Polymorphism and superconductivity in the V-Nb-Mo-Al-Ga high-entropy alloys

High-entropy alloys (HEAs) are at the focus of current research for their diverse properties, including superconductivity and structural polymorphism. However, the polymorphic transition has been observed only in nonsuperconducting HEAs and mostly under high pressure. Here we report the discovery of superconductivity and temperature-driven polymorphism in the (V$_{0.5}$Nb$_{0.5}$)$_{3-x}$Mo$_{x}$Al$_{0.5}$Ga$_{0.5}$ (0.2 $\leq$ $x$ $\leq$ 1.4) HEAs. It is found that the as-cast HEA is of a single body-centered cubic (bcc) structure for $x$ = 0.2 and a mixture of the bcc and A15 structures for higher $x$ values. Upon annealing, the bcc structure undergoes a polymorphic transformation to the A15 one and all HEAs exhibits bulk superconductivity. For $x$ = 0.2, whereas the bcc polymorph is not superconducting down to 1.8 K, the A15 polymorph has a superconducting transition temperature $T_{\rm c}$ of 10.2 K and an estimated zero-temperature upper critical field $B_{\rm c2}$(0) of 20.1 T, both of which are the highest among HEA superconductors. With increasing Mo content $x$, both $T_{\rm c}$ and $B_{\rm c2}$(0) of the A15-type HEAs decrease, yet the large ratio of $B_{\rm c2}$(0)/$T_{\rm c}$ signifies a disorder-induced enhancement of the upper critical field over a wide $x$ range. The decrease in $T_{\rm c}$ is attributed to the decrease in both the electronic specific-heat coefficient and electron-phonon coupling strength. Furthermore, the valence electron count dependence of $T_{\rm c}$, which is different from both the binary A15 and other structurally different HEA superconductors, suggests that $T_{\rm c}$ may be increased further by reducing the number of valence electrons. Our results not only uncover HEA superconductors of a new structural type, but also provide the first example of polymorphism dependent superconductivity in HEAs.

cond-mat.supr-con↗

arXiv2019

Enhancement of the upper critical field in the cubic Laves-phase superconductor HfV$_{2}$ by Nb doping

We report the effect of Nb doping on the upper critical field of the cubic Laves-phase superconductor HfV$_{2}$ studied in a series of HfV$_{2-x}$Nb$_{x}$ samples with 0 $\leq$ $x$ $\leq$ 0.3 under pulsed fields up to 30 T. The undoped HfV$_{2}$ undergoes a martensitic structural transition around 110 K, and becomes superconducting below $T_{\rm c}$ = 9.4 K. Upon Nb doping, while the structural transition is suppressed for $x$ $\geq$ 0.1, a maximum in $T_{\rm c}$ of 10.1 K and zero-temperature upper critical field $B_{\rm c2}$(0) of 22.4 T is found at $x$ = 0.2, which is ascribed to an increase of the density of states at the Fermi level. For all samples, the temperature dependence of $B_{\rm c2}$ can be well described by the Werthamer-Helfand-Hohenberg (WHH) theory that takes into account both the spin paramagnetic effect and spin orbit scattering. In addition, a comparison is made between the $B_{\rm c2}$ behavior of HfV$_{2-x}$Nb$_{x}$ and those of Nb-Ti and Nb$_{3}$Sn.

cond-mat.supr-con↗

arXiv2019

Superconducting phase diagram and nontrivial band topology of structurally modulated Sn$_{1-x}$Sb$_{x}$

We report the discovery of superconductivity in binary alloy Sn$_{1-x}$Sb$_{x}$ with $x$ in the range of 0.43 to 0.6, which possesses a modulated rhombohedral structure due to the incommensurate ordering of Sn and Sb layers along the $c$-axis. The specific heat measurements indicate a weakly coupled, fully gapped superconducting state in this homogeneity range with a maximum bulk $T_{\rm c}$ of 1.58 K at $x$ = 0.46, though the electronic specific heat and Hall coefficients remain nearly $x$-independent. The nonmonotonic dependence of the bulk $T_{\rm c}$ is discussed in relation to the effects of Sb-layer intercalation between the [Sn$_{4}$Sb$_{3}$] seven-layer lamellae that are the essential building block for superconductivity. On the other hand, a zero-resistivity transition is found to take place well above the bulk superconducting transition, and the corresponding $T_{\rm c}$ increases monotonically with $x$ from 2.06 K to 3.29 K. This contrast, together with the uniform elements distribution revealed by energy dispersive x-ray mapping, implies that the resistive transition is due to the strain effect at the grain boundary rather than the compositional inhomogeneity. The first-principles calculations on the representative composition Sn$_{4}$Sb$_{3}$ ($x$ = 0.43) indicate that it is topologically nontrivial similar to Sb, but with different Z$_{2}$ invariants (0;111). Our results not only identify a new superconducting region in the Sn-Sb phase diagram, but also provide a viable platform to study the interplay between structural modulation, nontrivial band topology and superconductivity.

cond-mat.supr-con↗

arXiv2018

Type-II superconductivity in W5Si3-type Nb5Sn2Al

We report the discovery of superconductivity in the ternary aluminide Nb$_{5}$Sn$_{2}$Al, which crystallizes in the W$_{5}$Si$_{3}$-type structure with one-dimensional Nb chains along the $c$-axis. It is found that the compound has a multiband nature and becomes a weakly coupled, type-II superconductor below 2.0 K. The bulk nature of superconductivity is confirmed by the specific heat jump, whose temperature dependence shows apparent deviation from a single isotropic gap behavior. The lower and upper critical fields are estimated to be 2.0 mT and 0.3 T, respectively. From these values, we derive the penetration depth, coherence length and Ginzburg-Landau parameter to be 516 nm, 32.8 nm and 15.6, respectively. By contrast, the isostructural compound Ti$_{5}$Sn$_{2}$Al dose not superconduct above 0.5 K. A comparison of these results with other W$_{5}$Si$_{3}$-type superconductors suggests that $T_{\rm c}$ of these compounds correlates with the average number of valence electrons per atom.

cond-mat.supr-con↗