arXiv subjects

Han Fu

Publications and source records attributed to Han Fu.

36 records · Page 2Linked to original sources

arXiv2021

Parmsurv: a SAS Macro for Flexible Parametric Survival Analysis with Long-Term Predictions

Health economic evaluations often require predictions of survival rates beyond the follow-up period. Parametric survival models can be more convenient for economic modelling than the Cox model. The generalized gamma (GG) and generalized F (GF) distributions are extensive families that contain almost all commonly used distributions with various hazard shapes and arbitrary complexity. In this study, we present a new SAS macro for implementing a wide variety of flexible parametric models including the GG and GF distributions and their special cases, as well as the Gompertz distribution. Proper custom distributions are also supported. Different from existing SAS procedures, this macro not only supports regression on the location parameter but also on ancillary parameters, which greatly increases model flexibility. In addition, the SAS macro supports weighted regression, stratified regression and robust inference. This study demonstrates with several examples how the SAS macro can be used for flexible survival modeling and extrapolation.

stat.CO↗

arXiv2020

A Software-Repair Robot based on Continual Learning

Software bugs are common and correcting them accounts for a significant part of costs in the software development and maintenance process. This calls for automatic techniques to deal with them. One promising direction towards this goal is gaining repair knowledge from historical bug fixing examples. Retrieving insights from software development history is particularly appealing with the constant progress of machine learning paradigms and skyrocketing `big' bug fixing data generated through Continuous Integration (CI). In this paper, we present R-Hero, a novel software repair bot that applies continual learning to acquire bug fixing strategies from continuous streams of source code changes, implemented for the single development platform Github/Travis CI. We describe R-Hero, our novel system for learning how to fix bugs based on continual training, and we uncover initial successes as well as novel research challenges for the community.

cs.SE↗

arXiv2020

MCEN: Bridging Cross-Modal Gap between Cooking Recipes and Dish Images with Latent Variable Model

Nowadays, driven by the increasing concern on diet and health, food computing has attracted enormous attention from both industry and research community. One of the most popular research topics in this domain is Food Retrieval, due to its profound influence on health-oriented applications. In this paper, we focus on the task of cross-modal retrieval between food images and cooking recipes. We present Modality-Consistent Embedding Network (MCEN) that learns modality-invariant representations by projecting images and texts to the same embedding space. To capture the latent alignments between modalities, we incorporate stochastic latent variables to explicitly exploit the interactions between textual and visual features. Importantly, our method learns the cross-modal alignments during training but computes embeddings of different modalities independently at inference time for the sake of efficiency. Extensive experimental results clearly demonstrate that the proposed MCEN outperforms all existing approaches on the benchmark Recipe1M dataset and requires less computational cost.

cs.CV↗

arXiv2020

A Machine Learning Framework for Data Ingestion in Document Images

Paper documents are widely used as an irreplaceable channel of information in many fields, especially in financial industry, fostering a great amount of demand for systems which can convert document images into structured data representations. In this paper, we present a machine learning framework for data ingestion in document images, which processes the images uploaded by users and return fine-grained data in JSON format. Details of model architectures, design strategies, distinctions with existing solutions and lessons learned during development are elaborated. We conduct abundant experiments on both synthetic and real-world data in State Street. The experimental results indicate the effectiveness and efficiency of our methods.

cs.CV↗

arXiv2020

Jet Sub-structure in Fireworks Emission from Non-uniform and Rotating Bose-Einstein Condensates

We show that jet emission from a Bose condensate with periodically driven interactions, a.k.a. "Bose fireworks", contains essential information on the condensate wavefunction, which is difficult to obtain using standard detection methods. We illustrate the underlying physics with two examples. When condensates acquire phase patterns from external potentials or from vortices, the jets display novel sub-structure, such as oscillations or spirals, in their correlations. Through a comparison of theory, numerical simulations and experiments, we show how one can quantitatively extract the phase and the helicity of a condensate from the emission pattern. Our work demonstrating the strong link between jet emission and the underlying quantum system, bears on the recent emphasis on jet sub-structure in particle physics.

cond-mat.quant-gas↗

arXiv2019

Band-Gap-Dependent Electronic Compressibility of Carbon Nanotubes in the Wigner Crystal Regime

Electronic compressibility, the second derivative of ground state energy with respect to total electron number, is a measurable quantity that reveals the interaction strength of a system and can be used to characterize the orderly crystalline lattice of electrons known as the Wigner crystal. Here, we measure the electronic compressibility of individual suspended ultraclean carbon nanotubes in the low-density Wigner crystal regime. Using low-temperature quantum transport measurements, we determine the compressibility as a function of carrier number in nanotubes with varying band gaps. We observe two qualitatively different trends in compressibility versus carrier number, both of which can be explained using a theoretical model of a Wigner crystal that accounts for both the band gap and the confining potential experienced by charge carriers. We extract the interaction strength as a function of carrier number for individual nanotubes and show that the compressibility can be used to distinguish between strongly and weakly interacting regimes.

cond-mat.str-el↗

arXiv2019

Reference Network for Neural Machine Translation

Neural Machine Translation (NMT) has achieved notable success in recent years. Such a framework usually generates translations in isolation. In contrast, human translators often refer to reference data, either rephrasing the intricate sentence fragments with common terms in source language, or just accessing to the golden translation directly. In this paper, we propose a Reference Network to incorporate referring process into translation decoding of NMT. To construct a \emph{reference book}, an intuitive way is to store the detailed translation history with extra memory, which is computationally expensive. Instead, we employ Local Coordinates Coding (LCC) to obtain global context vectors containing monolingual and bilingual contextual information for NMT decoding. Experimental results on Chinese-English and English-German tasks demonstrate that our proposed model is effective in improving the translation quality with lightweight computation cost.

cs.CL↗

arXiv2018

Density waves and jet emission asymmetry in Bose Fireworks

A Bose condensate subject to a periodic modulation of the two-body interactions was recently observed to emit matter-wave jets resembling "fireworks" [Nature 551, 356(2017)]. In this paper, combining experiment with numerical simulation, we demonstrate that these "Bose fireworks" represent a late stage in a complex time evolution of the driven condensate. We identify a "density wave" stage which precedes jet emission and results from interference of matterwaves. The density waves self-organize and self-amplify without the breaking of long range translational symmetry. Importantly, this density wave structure deterministically establishes the template for the subsequent patterns of the emitted jets. Our simulations, in good agreement with experiment, also address the apparent asymmetry in the jet pattern and show it is fully consistent with momentum conservation.

cond-mat.quant-gas↗

arXiv2017

Anomalous Thermodynamic Properties of Electron Accumulation Layer in SrTiO$_{3}$

Due to the nonlinear dielectric response within SrTiO$_{3}$ (STO), an accumulation layer created by positive charges at the surface of the STO sample ($x=0$) has an electron density profile $n(x)$ that slowly decays as $1/x^{12/7}$. Here we show that the long tail of $n(x)$ causes the magnetization and the specific heat of the accumulation layer to diverge at large $x$. We explore the truncation of the tail by the finite sample width $W$, the transition from the nonlinear to linear dielectric response with dielectric constant $\kappa$, and the use of a back gate with a negative voltage $-|V|$. We find that both the magnetization and specific heat are anomalously large and obey nontrivial power law dependences on $W$, $\kappa$, or $|V|$. We conclude with a discussion of how the capacitance as a function of the back gate voltage may be used to study the shape of the $n(x)$ tail in thin samples.

cond-mat.mes-hall↗

arXiv2017

Roughness scattering induced insulator-metal-insulator transition in a quantum wire

We have theoretically investigated the influence of interface roughness scattering on the low temperature mobility of electrons in quantum wires when electrons fill one or many subbands. We find the Drude conductance of the wire with length $\mathcal{L}$ first increases with increasing linear concentration of electrons $\eta$ and then decreases at larger concentrations. For small radius $R$ of the wire with length $\mathcal{L}$ the peak of the conductance $G_{max}$ is below $e^2/h$ so that electrons are localized. The height of this peak grows as a large power of $R$, so that at large $R$ the conductance $G_{max}$ exceeds $e^2/h$ and a window of concentrations with delocalized states (which we call the metallic window) opens around the peak. Thus, we predict an insulator-metal-insulator transition with increasing concentration for large enough $R$. Furthermore, we show that the metallic domain can be sub-divided into three smaller domains: 1) single-subband ballistic conductor, 2) many-subband ballistic conductor 3) diffusive metal, and use our results to estimate the conductance in these domains. Finally we estimate the critical value of $R_c(\mathcal{L})$ at which the metallic window opens for a given length $\mathcal{L}$ and find it to be in reasonable agreement with experiment.

cond-mat.mes-hall↗

arXiv2016

Electron Accumulation Layer in Ultrastrong Magnetic Field

When a three-dimensional electron gas is subjected to a very strong magnetic field, it can reach a quasi-one-dimensional state in which all electrons occupy the lowest Landau level. This state is referred to as the extreme quantum limit (EQL) and has been studied in the physics of pulsars and bulk semiconductors. Here we present a theory of the EQL phase in electron accumulation layers created by an external electric field $E$ at the surface of a semiconductor with a large Bohr radius such as InSb, PbTe, SrTiO$_3$ (STO), and particularly in the LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure. The phase diagram of the electron gas in the plane of the magnetic field strength and the electron surface concentration is found for different orientations of the magnetic field. We find that in addition to the quasi-classical metallic phase (M), there is a metallic EQL phase, as well as an insulating Wigner crystal state (WC). Within the EQL phase, the Thomas-Fermi approximation is used to find the electron density and the electrostatic potential profiles of the accumulation layer. Additionally, the quantum capacitance for each phase is calculated as a tool for experimental study of these phase diagrams.

cond-mat.mes-hall↗

arXiv2016

Metal-insulator transition in films of doped semiconductor nanocrystals

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$ for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted $n_c$, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

cond-mat.mes-hall↗

arXiv2016

Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$

We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons $n(x)$ in such a layer decays with the distance from the surface $x$ very slowly as $n(x) \propto 1/x^{12/7}$. We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large $x$ because of growing time electrons need to reach the surface. We explore truncation of this divergence by the finite sample width, by the bulk scattering rate, or by the crossover to the bulk linear dielectric response with the dielectric constant $\kappa$. As a result we arrive at the anomalously large mobility, which depends not only on the rate of the surface scattering, but also on the physics of truncation. Similar anomalous behavior is found for the Hall factor, the magnetoresistance, and the thermopower.

cond-mat.mes-hall↗

arXiv2016

Surface roughness scattering in multisubband accumulation layers

Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the surface roughness scattering. However theories of roughness scattering so far dealt only with the small-density single subband two-dimensional electron gas (2DEG). Here we develop a theory of roughness-scattering limited mobility for the multisubband large concentration case. We show that with growing 2D electron concentration $n$ the surface dimensionless conductivity $\sigma/(2e^2/h)$ first decreases as $\propto n^{-6/5}$ and then saturates as $\sim(da_B/\Delta^2)\gg 1$, where $d$ and $\Delta$ are the characteristic length and height of the surface roughness, $a_B$ is the effective Bohr radius. This means that in spite of the shrinkage of the 2DEG width and the related increase of the scattering rate, the 2DEG remains a good metal. Thus, there is no re-entrant metal-insulator transition at high concentrations conjectured by Das Sarma and Hwang [PRB 89, 121413 (2014)].

cond-mat.mes-hall↗

arXiv2015

Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

This paper is focused on the the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration $n_c$ at which it becomes metallic. The hopping conductivity is described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the doping concentration $n$ in the film of touching NCs. For that we calculate the electron transfer matrix element $t(n)$ between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of $t(n)$ to the disorder-induced NC level dispersion to find the localization length of electrons due to the multi-step elastic co-tunneling process. We found three different phases at $n<n_c$ depending on the strength of disorder, the material, sizes of NCs and their facets: 1) "insulator" where the localization length of electrons increases monotonically with $n$ and 2) "oscillating insulator" when the localization length (and the conductivity) oscillates with $n$ from the insulator base and 3) "blinking metal" where the localization length periodically diverges. The first two phases were seen experimentally and we discuss how one can see the more exotic third one. In all three the localization length diverges at $n=n_c$. This allows us to find $n_c$.

cond-mat.mes-hall↗

arXiv2015

Electron gas induced in SrTiO$_3$

This mini-review is dedicated to the 85th birthday of Prof. L. V. Keldysh, from whom we have learned so much. In this paper we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO$_3$ (STO) in the cases of planar, spherical and cylindrical geometries. The electron gas can be created by applying an induction $D_0$ to the STO surface. We describe the lattice dielectric response of STO using the Landau-Ginzburg free energy expansion and employ the Thomas-Fermi (TF) approximation for the electron gas. For the planar geometry we arrive at the electron density profile $n(x) \propto (x+d)^{-12/7}$, where $d \propto D_0^{-7/5} $. We extend our results to overlapping electron gases in GTO/STO/GTO multi-heterojunctions and electron gases created by spill-out from NSTO (heavily $n$-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with nuclear charge $Ze$, where $Z > 170$, electrons collapse onto the nucleus resulting in a net charge $Z_n < Z$. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds the critical value $Z_c \simeq R/a$, where $a$ is the lattice constant. The net charge $eZ_n$ grows with $Z$ until $Z$ exceeds $Z^* \simeq (R/a)^{9/7}$. After this point, the charge number of the compact core $Z_n$ remains $\simeq Z^*$, with the rest $Z^*$ electrons forming a sparse Thomas-Fermi electron atmosphere around it. We extend our results to the case of long cylindrical clusters as well.

cond-mat.mes-hall↗

arXiv2015

Collapse of electrons to a donor cluster in SrTiO$_3$

It is known that a nucleus with charge $Ze$ where $Z>170$ creates electron-positron pairs from the vacuum. These electrons collapse onto the nucleus resulting in a net charge $Z_n<Z$ while the positrons are emitted. This effect is due to the relativistic dispersion law. The same reason leads to the collapse of electrons to the charged impurity with a large charge number $Z$ in narrow-band gap semiconductors and Weyl semimetals as well as graphene. In this paper, a similar effect of electron collapse and charge renormalization is found for donor clusters in SrTiO$_3$ (STO), but with a very different origin. At low temperatures, STO has an enormously large dielectric constant. Because of this, the nonlinear dielectric response becomes dominant when the electric field is not too small. We show that this leads to the collapse of surrounding electrons into a charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds a critical value $Z_c\simeq R/a$ where $a$ is the lattice constant. Using the Thomas-Fermi approach, we find that the net charge $Z_ne$ grows with $Z$ until $Z$ exceeds another value $Z^*\simeq(R/a)^{9/7}$. After this point, $Z_n$ remains $\sim Z^*$. We extend our results to the case of long cylindrical clusters. Our predictions can be tested by creating discs and stripes of charge on the STO surface.

cond-mat.mes-hall↗

arXiv2015

Correlation effects in the capacitance of a gated carbon nanotube

For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that when the average spacing $n^{-1}$ between electrons within the low density 1-dimensional electron gas (1DEG) in the CNT is larger than the physical separation $d$ between the CNT and the gate, the enhancement of capacitance is expected to be big. A recent Coulomb blockade experiment[1], however, has observed no obvious increase of capacitance even at very low electron density. We show that this smaller capacitance can be understood as the result of the confining potential produced by the potential difference between the source/drain electrodes and the gate, which compresses the 1DEG when the electron number decreases. We suggest that by profiling the potential with the help of multiple split gates, one can return to the case of a uniform 1DEG with anomalously large capacitance.

cond-mat.str-el↗