arXiv subjects

Hailing Guo

Publications and source records attributed to Hailing Guo.

3 recordsLinked to original sources

arXiv2026

Delta1 with LLM: symbolic and neural integration for credible and explainable reasoning

Neuro-symbolic reasoning increasingly demands frameworks that unite the formal rigor of logic with the interpretability of large language models (LLMs). We introduce an end to end explainability by construction pipeline integrating the Automated Theorem Generator Delta1 based on the full triangular standard contradiction (FTSC) with LLMs. Delta1 deterministically constructs minimal unsatisfiable clause sets and complete theorems in polynomial time, ensuring both soundness and minimality by construction. The LLM layer verbalizes each theorem and proof trace into coherent natural language explanations and actionable insights. Empirical studies across health care, compliance, and regulatory domains show that Delta1 and LLM enables interpretable, auditable, and domain aligned reasoning. This work advances the convergence of logic, language, and learning, positioning constructive theorem generation as a principled foundation for neuro-symbolic explainable AI.

cs.LO↗

arXiv2025

Ultra-clean interface between high k dielectric and 2D MoS2

Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the integration of ultra-thin gate dielectrics remains a challenge, as conventional oxides such as SiO2, Al2O3, and HfO2 tend to unintentionally dope 2D TMDs and introduce interfacial defect states, leading to undesirable field-effect transistor (FET) performance and unstable threshold voltages. Here, we demonstrate that zirconium oxide (ZrO2), a high-k dielectric compatible with semiconductor processing, forms an ultra-clean interface with monolayer MoS2. Using soft and hard X-ray photoelectron spectroscopy and density functional theory, we find that ZrO2 does not measurably interact with MoS2, in contrast to significant doping observed for SiO2 and HfO2 substrates. As a result, back-gated monolayer MoS2 FETs fabricated with ZrO2 dielectrics exhibit stable and positive threshold voltages (0.36 plus/minus 0.3 V), low subthreshold swing (75 mV per decade), and high ON currents exceeding 400 microamperes. We further demonstrate p-type WSe2 FETs with ON currents greater than 200 microamperes per micrometer by suppressing electron doping with ZrO2 dielectrics. Atomic-resolution imaging confirms a defect-free ZrO2/MoS2 interface, which enables top-gate FETs with an equivalent oxide thickness of 0.86 nanometers and subthreshold swing of 80 mV per decade. Moreover, the ultraclean ZrO2/MoS2 interface allows for effective threshold voltage modulation in top-gate FETs via gate metal work function engineering. These findings establish ZrO2 as a highly promising, industry-compatible high-k dielectric for scalable 2D TMD-based electronics.

cond-mat.mtrl-sci↗

arXiv2025

Critical angles and one-dimensional moir\'e physics in twisted rectangular lattices

Engineering moir\'e superlattices in van der Waals heterostructures provides fundamental control over emergent electronic, structural, and optical properties allowing to affect topological and correlated phenomena. This control is achieved through imposed periodic modulation of potentials and targeted modifications of symmetries. For twisted bilayers of van der Waals materials with rectangular lattices, such as PdSe2, this work shows that one-dimensional (1D) moir\'e patterns emerge universally. This emergence is driven by a series of critical twist angles (CAs). We investigate the geometric origins of these unique 1D moir\'e patterns and develop a universal mathematical framework to predict the CAs in twisted rectangular lattices. Through a density functional theory (DFT) description of the electronic properties of twisted bilayer PdSe2, we further reveal directionally localized flat band structures, localized charge densities and strong spin-orbit coupling along the dispersive direction which points to the emergence of an effectively 1D strongly spin-orbit coupled electronic systems. This establishes twisted rectangular systems as a unique platform for engineering low-symmetry moir\'e patterns, low-dimensional strongly correlated and topological physics, and spatially selective quantum phases beyond the isotropic paradigms of hexagonal moir\'e materials.

cond-mat.mes-hall↗