arXiv subjects

Hailin Peng

Publications and source records attributed to Hailin Peng.

At least 19 recordsLinked to original sources

arXiv2026

Breaking the mutual exclusivity between metallicity and ferroelectricity in a non-polar covalent semiconductor via orbital selective doping

The mutual exclusion of ferroelectricity and metallic conductivity is a long-standing tenet because itinerant electrons screen long-range Coulomb forces that stabilize the bulk polar order. Here, we break this paradigm by heavily doping a non-polar covalent semiconductor of cubic silicon carbide (3C-SiC) with nitrogen. This introduces heavy electron doping, inducing metallicity and driving a structural transition from the non-polar F-43m to the polar R3m symmetry via the pseudo-Jahn-Teller effect. Remarkably, we provide direct, atomic-scale visualization of about 180{\deg} polarization reversal under an external voltage bias in a ferroelectric metal. The strongly directional character of antibonding orbitals occupied by conduction electrons prevents them from screening the local Si-C polarization, resulting in the coexistence of metallicity and ferroelectricity. Ferroelectric tunnel junctions demonstrate nonvolatile memory properties with a well-defined high-resistance state (HRS) and low-resistance state (LRS), an ultrahigh response speed (~50 ns), an ultralow operating voltage (1 V), an endurance exceeding 85927 cycles, and a projected retention time of 100 years. Our results provide a novel strategy for pioneering ferroelectricity in a metal, a new ferroelectric metal platform for exploring exotic properties, and a ferroelectric device with high performance that meets the requirements for low consumption and high-speed non-volatile devices.

cond-mat.mtrl-sci↗

arXiv2026

Direct Measurement of Exciton Dispersion in the Long-Wavelength Limit

Exciton dispersion, which governs the propagation, scattering and radiative decay of electron-hole pairs, is essential to optoelectronics and quantum materials. In two-dimensional systems, weakened dielectric screening and long-range electron-hole exchange are predicted to induce nonanalytic exciton dispersion in the long-wavelength limit. However, direct quantitative characterization of its dimensional evolution remains lacking, especially in the ultralow-q regime (q < 0.02 $\r{A}^{-1}$). Here we employ defocus-engineered momentum-resolved electron energy-loss spectroscopy in scanning transmission electron microscopy, achieving an ultrahigh momentum resolution of 0.0002 $\r{A}^{-1}$. Using freestanding hBN as a prototypical platform, we resolve layer-dependent exciton dispersion and quantify its characteristic crossover momentum and group velocity in the long-wavelength limit. With increasing thickness, the nonanalytic linear-dispersion regime is progressively compressed, manifested by a reduction in characteristic crossover momentum q_c from $1.82 \times 10^{-1} \r{A}^{-1}$ in the monolayer to $3.0 \times 10^{-1} \r{A}^{-1}$ in 25 layers. Meanwhile, the low-q group velocity increases from $2.0 \times 10^{-3} c$ to $2.9 \times 10^{-2} c$, before the dispersion ultimately approaches the bulk-like parabolic limit. We further examine how the exciton band structure of monolayer hBN responds to its surrounding environment, including temperature, adjacent graphene layers, and interlayer twist in BN/graphene heterostructures. These findings uncover the fundamental physics of low-dimensional excitons, deliver valuable guidance for modulating exciton transport, diffusion and quasiparticle coupling in layered quantum materials, and establish a powerful experimental route to explore low-dimensional exciton physics.

cond-mat.mes-hall↗

arXiv2025

Performance and reliability potential of Bi$_2$O$_2$Se/Bi$_2$SeO$_5$ transistors

While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator combination that ensures high performance, stability, and reliability. In contrast to conventional 2D interfaces, which suffer from van der Waals gaps or covalent bonding issues, zippered structures such as the high-mobility 2D semiconductor Bi$_2$O$_2$Se and its native high-$\kappa$ oxide Bi$_2$SeO$_5$ offer high-quality interfaces, good scalability, and excellent device performance. While most prior work has focused mainly on basic device behavior, here we also thoroughly assess the stability and reliability of this material system using a multiscale approach that integrates electrical characterization, density functional theory, and TCAD simulations, linking atomistic states to device-scale reliability. By analyzing four transistor design generations (top-gated, fin, and two gate-all-around FETs), we provide realistic predictions for how this system performs at the ultimate scaling limit. We identify oxygen-related defects in the oxide as the main contributors to hysteresis and recoverable threshold shifts, and we propose mitigation strategies through encapsulation or oxygen-rich annealing. Benchmarking the extracted material parameters against IRDS 2037 requirements, we demonstrate that Bi$_2$O$_2$Se/Bi$_2$SeO$_5$ transistors can achieve high drain and low gate currents at ultra-scaled conditions. These findings position this material system as a technologically credible and manufacturing-relevant pathway for future nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2025

Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging

Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Both antiparallel domains, an intrinsic outcome of epitaxy on high-symmetry substrates, and associated structural defects have long evaded optical detection. Here, we show that interferometric second-harmonic generation (SHG) imaging provides a powerful, nondestructive probe of lattice orientation and structural integrity in chemical vapor deposition-grown hBN. This approach reveals the ubiquitous formation of antiparallel domains and quantifies their impact on crystalline order. SHG intensity also emerges as a direct optical metric of domain disorder, spanning three orders of magnitude across films produced by ten different growth routes. Correlation with Raman spectroscopy establishes a unified framework for evaluating crystalline quality. Beyond hBN, this method offers a high-throughput route to wide-area structural imaging in various non-centrosymmetric materials, advancing their deployment in electronics, photonics, and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2025

Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs

Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an important metric related to the device quality. The hysteresis is often reported with attributes like "negligible" or "small" without giving any specifics as to how this was determined and against what reference the measured values were compared to. Quite surprisingly, there appears to be only a fragmentary understanding of the mechanisms actually contributing to hysteresis and the sensitivity of the actual measurement on various experimental parameters. We attempt to close this gap by first providing a comprehensive theoretical analysis of the dominant mechanisms contributing to hysteresis: charge trapping by defects from the channel or the gate, the drift of mobile charges, and eventually ferroelectricity. We continue by suggesting methods to experimentally distinguishing between these phenomena. Based on these discussions it becomes clear that previously reported hysteresis values have little meaning as they have been non-systematically recorded under arbitrary conditions. In order to resolve this predicament, we propose a standardized hysteresis measurement scheme to establish the hysteresis as a comparable metric for the assessment of device stability. Our standardized scheme ensures that hysteresis data can be effectively compared across different technologies and, most importantly, provide a means to extrapolate data obtained on thicker prototypes to subnanometer equivalent oxide thicknesses. This facilitates the systematic benchmarking of insulator/channel combinations in terms of stability, which thereby enables the screening of material systems for more stable and reliable 2D-material-based MOSFETs.

physics.app-ph↗

arXiv2025

How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors

The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a fundamental challenge, as the dielectric/channel interface dramatically impacts virtually all performance parameters. While several promising gate dielectrics have recently been reported, the evaluation of their quality and suitability is often fragmentary and focused on selected important performance metrics of the gate stack, such as the capacitive gate control, leakage currents, reliability, and ease of fabrication and integration. However, identifying a suitable gate stack is a complex problem that has not yet been approached systematically. In this perspective, we aim to formulate general criteria for good gate dielectrics.

physics.app-ph↗

arXiv2025

Quantized conductance in a CVD-grown nanoribbon with hidden Rashba effect

Quantized conductance in quasi-one-dimensional systems not only provides a hallmark of ballistic transport, but also serves as a gateway for exploring quantum phenomena. Recently, a unique hidden Rashba effect attracts tremendous attention, which arises from the compensation of opposite spin polarizations of a Rashba bilayer in inversion symmetric crystals with dipole fields, such as bismuth oxyselenide ($\mathrm{Bi}_{2}\mathrm{O}_{2}\mathrm{Se}$). However, investigating this effect utilizing conductance quantization is still challenging. Here we report the conductance quantization observed in a chemical vapor deposition (CVD)-grown high-mobility $\mathrm{Bi}_{2}\mathrm{O}_{2}\mathrm{Se}$ nanoribbon, where quantized conductance plateaus up to $44\cdot 2e^{2}/{h}$ ($e$ is the elementary charge, $h$ is the Planck constant, and the factor $2$ results from spin degeneracy) are achieved at zero magnetic field. Due to the hidden Rashba effect, the quantized conductance remains in multiples of $2e^{2}/{h}$ without Zeeman splitting even under magnetic field up to $12$ T. Moreover, within a specific range of magnetic field, the plateau sequence exhibits the Pascal triangle series, namely $(1,3,6,10,15\dots )\cdot 2e^{2}/{h}$, reflecting the interplay of size quantization in two transverse directions. These observations are well captured by an effective hidden Rashba bilayer model. Our results demonstrate $\mathrm{Bi}_{2}\mathrm{O}_{2}\mathrm{Se}$ as a compelling platform for spintronics and the investigation of emergent phenomena.

cond-mat.mes-hall↗

arXiv2025

Observation of Topological Nodal-Ring Phonons in Monolayer Hexagonal Boron Nitride

Topological physics has evolved from its initial focus on fermionic systems to the exploration of bosonic systems, particularly phononic excitations in crystalline materials. Two-dimensional (2D) topological phonons emerge as promising candidates for future technological applications. Currently, experimental verification of 2D topological phonons has remained exclusively limited to graphene, a constraint that hinders their applications in phononic devices. Here, we report experimental evidence of topological phonons in monolayer hexagonal boron nitride using advanced high-resolution electron energy loss spectroscopy. Our high-precision measurements explicitly demonstrate two topological nodal rings in monolayer hexagonal boron nitride, protected by mirror symmetry, expanding the paradigm of 2D topological phonons beyond graphene. This research not only deepens fundamental understanding of 2D topological phonons, but also establishes a phononic device platform based on wide-bandgap insulators, crucial for advancements in electronics and photonics applications.

cond-mat.mtrl-sci↗

arXiv2024

Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect

In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on ab initio band structures of Bi2O2Se thin films, we can ascribe the absence of odd-integer states in thicker films to the hidden Rasbha effect, where the local inversion symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one unit cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.

cond-mat.mes-hall↗

arXiv2023

Square Moir\'e Superlattices in Twisted Two-Dimensional Halide Perovskites

Moir\'e superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moir\'e superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moir\'e superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10{\deg}. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically forecasted flat band. This work illustrates the potential of extended ionic interaction in realizing moir\'e physics at room temperature, broadening the horizon for future investigations.

cond-mat.mtrl-sci↗

arXiv2023

Reply to: Low-frequency quantum oscillations in LaRhIn$_5$: Dirac point or nodal line?

We thank G.P. Mikitik and Yu.V. Sharlai for contributing this note and the cordial exchange about it. First and foremost, we note that the aim of our paper is to report a methodology to diagnose topological (semi)metals using magnetic quantum oscillations. Thus far, such diagnosis has been based on the phase offset of quantum oscillations, which is extracted from a "Landau fan plot". A thorough analysis of the Onsager-Lifshitz-Roth quantization rules has shown that the famous $\pi$-phase shift can equally well arise from orbital- or spin magnetic moments in topologically trivial systems with strong spin-orbit coupling or small effective masses. Therefore, the "Landau fan plot" does not by itself constitute a proof of a topologically nontrivial Fermi surface. In the paper at hand, we report an improved analysis method that exploits the strong energy-dependence of the effective mass in linearly dispersing bands. This leads to a characteristic temperature dependence of the oscillation frequency which is a strong indicator of nontrivial topology, even for multi-band metals with complex Fermi surfaces. Three materials, Cd$_3$As$_2$, Bi$_2$O$_2$Se and LaRhIn$_5$ served as test cases for this method. Linear band dispersions were detected for Cd$_3$As$_2$, as well as the $F$ $\approx$ 7 T pocket in LaRhIn$_5$.

cond-mat.str-el↗

arXiv2022

Hydrogen isotope separation using graphene-based membranes in liquid water

Hydrogen isotope separation has been effectively achieved using gaseous H2/D2 filtered through graphene/Nafion composite membranes. Nevertheless, deuteron nearly does not exist in the form of gaseous D2 in nature but in liquid water. Thus, it is a more feasible way to separate and enrich deuterium from water. Herein we have successfully transferred monolayer graphene to a rigid and porous polymer substrate PITEM (polyimide tracked film), which could avoid the swelling problem of the Nafion substrate, as well as keep the integrity of graphene. Meanwhile, defects in large area of CVD graphene could be successfully repaired by interfacial polymerization resulting in high separation factor. Moreover, a new model was proposed for the proton transport mechanism through monolayer graphene based on the kinetic isotope effect (KIE). In this model, graphene plays the significant role in the H/D separation process by completely breaking the O-H/O-D bond, which can maximize the KIE leading to prompted H/D separation performance. This work suggests a promising application of using monolayer graphene in industry and proposes a pronounced understanding of proton transport in graphene

physics.chem-ph↗

arXiv2022

Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling

Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime where conductance plateaus were observed. When further increasing the electron density by increasing Vg, we entered the phase coherent regime and weak antilocalization (WAL) was observed. The spin relaxation length extracted from the WAL was found to be gate tunable, ranging from ~100 nm to ~250 nm and reaching a stronger spin-obit coupling (SOC) than the two-dimensional counterpart (flakes). We attribute the strong SOC and the gate tunability to the presence of a surface accumulation layer which induces a strong inversion asymmetry on the surface. Such scenario was supported by the observation of two Shubnikov-de Haas oscillation frequencies that correspond to two types of carriers, one on the surface, and the other in the bulk. The high-quality Bi2O2Se nanowires with a high mobility and a strong SOC can act as a very prospective material in future spintronics.

cond-mat.mes-hall↗

arXiv2022

Surface-bulk coupling in a Bi$_2$Te$_3$ nanoplate grown by van der Waals epitaxy

We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the sheet resistance of the device reveal that the transport carriers in the nanoplate are of n-type and that, with decreasing top gate voltage, the carrier density in the nanoplate is decreased. However, the mobility is increased with decreasing top-gate voltage. This mobility increase with decreasing carrier density in the nanoplate is demonstrated to arise from a decrease in bulk-to-surface electron scattering rate. Low-field magnetotransport measurements are performed at low temperatures. The measured magnetoconductivity of the nanoplate shows typical weak anti-localization (WAL) characteristics. We analyze the measurements by taking surface-bulk inter-channel electron scattering into account and extract dephasing times ${\tau}_{\phi}$, diffusion coefficients $D$ of electrons at the top surface and in the bulk, and the surface-bulk scattering times ${\tau}_{SB}$ as a function of top-gate voltage and temperature. It is found that the dephasing in the nanoplate arises dominantly from electron-electron scattering with small energy transfers. It is also found that the ratio of ${\tau}_{\phi}$/${\tau}_{SB}$ (a measure of the surface-bulk electron coherent coupling) is decreased with decreasing gate voltage or increasing temperature. We demonstrate that taking the surface-bulk coherent electron scattering in our Bi$_2$Te$_3$ nanoplate into account is essential to understand quantum transport measurements at low temperatures.

cond-mat.mes-hall↗

arXiv2021

Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.

cond-mat.mes-hall↗

arXiv2020

Unravelling a Zigzag Pathway for Hot-Carrier Collection at CH3NH3PbI3/Graphene Interfaces

The capture of photoexcited deep-band hot carriers, excited by photons with energies far above the bandgap, is of significant importance for photovoltaic and photoelectronic applications since it is directly related to the quantum efficiency of photon-to-electron conversion. By employing time-resolved photoluminescence and state-of-the-art time-domain density functional theory, we reveal that photoexcited hot carriers in organic-inorganic hybrid perovskites prefer a zigzag interfacial charge-transfer pathway, i.e., the hot carriers transfer back and forth between CH3NH3PbI3 and graphene, before they reach a charge separated state. Driven by quantum coherence and interlayer vibrational modes, this pathway at the semiconductor-graphene interface takes about 400 femtoseconds, much faster than the relaxation process within CH3NH3PbI3 (in several picoseconds). We further demonstrate that the transfer rate of the pathway can be further enhanced by interfacial defects. Our work provides a new insight for the fundamental understanding and precise manipulation of hot-carrier dynamics at the complex semiconductor-graphene interfaces, paving the way for highly efficient photovoltaic and photoelectric device optimization.

cond-mat.mtrl-sci↗

arXiv2020

Realization and transport investigation of a single layer-twisted bilayer graphene junction

We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized plateaus and the appearance of these resistance plateaus can be attributed to the presence of the well-defined edge-channel transport along the SLG-tBLG junction interface. The measurements also show that the difference between the cross-junction resistances measured on the two sides of the Hall-bar provides a sensitive measure to the edge channel transport characteristics in the two graphene layers that constitute the SLG-tBLG junction and to degeneracy lifting of the Landau levels in the tBLG layer. Temperature dependent measurements of the cross-junction resistance in the quantum Hall regime are also carried out and the influence of the transverse transport of the bulk Landau levels on the edge channel transport along the SLG-tBLG junction interface are extracted. These results enrich the understanding of the charge transport across interfaces in graphene hybrid structures and open up new opportunities for probing exotic quantum phenomena in graphene devices.

cond-mat.mes-hall↗

arXiv2020

Superconductivity in an Al-Twisted Bilayer Graphene-Al Junction device

We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is fabricated by contacting a piece of tBLG by two closely spaced Al electrodes in an Al-tBLG-Al Josephson junction configuration. Low-temperature transport measurements show that below the critical temperature of the Al electrodes ($T_c\approx1.1$ K), the device exhibits sizable supercurrents at zero magnetic field, arising from the superconducting proximity effect with high contact transparency in the device. In the measurements of the critical supercurrent as a function of perpendicularly applied magnetic field, a standard Fraunhofer-like pattern of oscillations is observed, indicating a uniform supercurrent distribution inside the junction. Multiple Andreev reflection characteristics are also observed in the spectroscopy measurements of the device, and their magnetic field and temperature dependencies are found to be well described by the Bardeen$-$Cooper$-$Schrieffer theory.

cond-mat.mes-hall↗