arXiv subjects

Guanglei Cheng

Publications and source records attributed to Guanglei Cheng.

18 recordsLinked to original sources

arXiv2026

High-quality Nano-patterning of Oxide Interfaces Using Transferred Gold Mask

Complex oxide interfaces, such as $\mathrm{SrTiO_3}$ and $\mathrm{KTaO_3}$ based heterostructures, host rich correlated phenomena with strong potential for advanced device applications. However, these interfaces are extremely susceptible to contamination and defect formation during nanofabrication, which often compromises device performance. Here, we present a solvent-free method for patterning oxide interfaces by employing high-resolution transferable thin metal masks in conjunction with oxygen-enriched $\mathrm{Ar^+}$ ion milling, which enables a clean and well-controlled nanofabrication process. Transport measurements demonstrate that the fabricated devices preserve their intrinsic properties, including high carrier mobilities, with negligible degradation compared to the pristine interfaces. This technique offers a convenient and robust route for engineering high-performance oxide electronic devices with precisely tailored transport characteristics.

cond-mat.mtrl-sci↗

arXiv2026

Reconfigurable Oxide Nanoelectronics by Tip-induced Electron Delocalization

Reconfigurable oxide nanoelectronics, enabled by conductive atomic force microscope (cAFM) lithography, have established complex oxide interfaces as a promising platform for quantum engineering that harnesses emergent phenomena for advanced functionalities. However, this cAFM nanofabrication process can only occur in the air, with simultaneous device decay described under the "water-cycle" writing mechanism. These restrictions pose ongoing challenges for device optimization in the quantum regime at mK temperatures. Here, we demonstrate a "waterless" cAFM lithography approach that is compatible with vacuum and cryogenic environments. Through oxygen vacancy engineering at the LaAlO$_3$/SrTiO$_3$ interface, we have achieved nonvolatile and reconfigurable cAFM control of nanoscale interfacial polaron-electron liquid transition at mK temperatures with an ultrafine line resolution of 0.85 nm. Supported by first-principles calculations and drift-diffusion modeling, we show that tip-controlled oxygen vacancy electromigration plays a key role. This advancement bridges reconfigurable device fabrication and concurrent characterization in situ at mK temperatures, and establishes a versatile Hubbard toolbox for engineering programmable quantum phases in correlated oxides.

cond-mat.mes-hall↗

arXiv2025

Quantum relaxometry for detecting biomolecular interactions with single NV centers

The investigation of biomolecular interactions at the single-molecule level has emerged as a pivotal research area in life science, particularly through optical, mechanical, and electrochemical approaches. Spins existing widely in biological systems, offer a unique degree of freedom for detecting such interactions. However, most previous studies have been largely confined to ensemble-level detection in the spin degree. Here, we developed a molecular interaction analysis method approaching single-molecule level based on relaxometry using the quantum sensor, nitrogen-vacancy (NV) center in diamond. Experiments utilized an optimized diamond surface functionalized with a polyethylenimine nanogel layer, achieving $\sim$10 nm average protein distance and mitigating interfacial steric hindrance. Then we measured the strong interaction between streptavidin and spin-labeled biotin complexes, as well as the weak interaction between bovine serum albumin and biotin complexes, at both the micrometer scale and nanoscale. For the micrometer-scale measurements using ensemble NV centers, we re-examined the often-neglected fast relaxation component and proposed a relaxation rate evaluation method, substantially enhancing the measurement sensitivity. Furthermore, we achieved nanoscale detection approaching single-molecule level using single NV centers. This methodology holds promise for applications in molecular screening, identification and kinetic studies at the single-molecule level, offering critical insights into molecular function and activity mechanisms.

quant-ph↗

arXiv2025

Time-Reversal Symmetry Protected Transport at Correlated Oxide Interfaces

Time-reversal symmetry (TRS) protection is core to topological physics, yet its role in correlated oxides-typically non-topological-remains underexplored. This limit hampers the potential in engineering exotic quantum states by fusing TRS protection and the rich emergent phenomena in the oxide platform. Here, we report evidence of a TRS-protected subband at oxygen vacancy-free LaAlO3/SrTiO3 interfaces. This subband causes a low-field quantum oscillation with anomalous characters: exceptionally light electron mass, aperiodicity, and susceptibility to magnetic fields. All findings align with a Rashba model in which TRS-protected transport occurs along quasi-1D ferroelastic domain walls, which possess a Dirac band topology and a giant Rashba spin-orbit coupling, two orders stronger than the 2D interface. Our results deepen the understanding of SrTiO3-based electron systems, unveiling an appealing new platform for quantum engineering.

cond-mat.mes-hall↗

arXiv2025

A Milli-Kelvin Atomic Force Microscope Made of Glass

Milli-Kelvin atomic force microscopy (mK-AFM) presents an ongoing experimental challenge due to the intense vibrations in a cryogen-free dilution refrigerator and the low cooling power available at mK temperatures. A viable approach is to make the system exceptionally rigid and thermally insulating to decouple external vibrations and isolate heat dissipation from the piezo elements. Here, we present a low-cost and large scan-range mK-AFM that operates below 100 mK. All the essential parts of our mK-AFM, including the scanners, tip assembly, and microscope body, are custom-made of fused silica glass by taking advantage of its high specific modulus, extremely low thermal expansion coefficient, and excellent thermal insulation properties. We carefully balance the scan range (25 ${\mu}$m $\times$ 25 ${\mu}$m), heat dissipation, and stiffness of the system to reach optimal performance at mK temperatures.

physics.ins-det↗

arXiv2024

Angle-Resolved Magneto-Chiral Anisotropy in a Non-Centrosymmetric Atomic Layer Superlattice

Chirality in solid-state materials has sparked significant interest due to potential applications of topologically-protected chiral states in next-generation information technology. The electrical magneto-chiral effect (eMChE), arising from relativistic spin-orbit interactions, shows great promise for developing chiral materials and devices for electronic integration. Here we demonstrate an angle-resolved eMChE in an A-B-C-C type atomic-layer superlattice lacking time and space inversion symmetry. We observe non-superimposable enantiomers of left-handed and right-handed tilted uniaxial magnetic anisotropy as the sample rotates under static fields, with the tilting angle reaching a striking 45 degree. Magnetic force microscopy and atomistic simulations correlate the tilt to the emergence and evolution of chiral spin textures. The Dzyaloshinskii-Moriya interaction lock effect in competition with Zeeman effect is demonstrated to be responsible for the angle-resolved eMChE. Our findings open up a new horizon for engineering angle-resolved magneto-chiral anisotropy, shedding light on the development of novel angle-resolved sensing or writing techniques in chiral spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Domain wall nature of sketched LaAlO3/SrTiO3 nanowires

The rich electron correlations and highly coherent transport in reconfigurable devices sketched by a conductive atomic force microscope tip at the LaAlO3/SrTiO3 interface have enabled the oxide platform an ideal playground for studying correlated electrons and quantum technological applications. Why these one-dimensional devices possess enhanced properties over the two-dimensional interface, however, has remained elusive. Here we provide evidence that one-dimensional LaAlO3/SrTiO3 nanowires are intrinsically ferroelastic domain walls by nature through thermodynamic study. We have observed spreading resistance anomalies under thermo-stimulus and temperature cycles, with characteristic temperatures matching domain wall polarity. This information is crucial in understanding the novel phenomena including superconductivity and high mobility quantum transport.

cond-mat.mes-hall↗

arXiv2019

Strong Aharonov-Bohm quantum interference in simply-connected LaAlO$_3$/SrTiO$_3$ structures

We report Aharonov-Bohm (AB)-type quantum interference in simply-connected devices created at the LaAlO$_3$/SrTiO$_3$ interface using conductive-atomic force microscope (c-AFM) lithography. The oscillations are multi-periodic functions of magnetic field strength, and they exhibit a substantial magnetic hysteresis with frequencies that depends on the magnetic sweep direction. The oscillation amplitude for the lowest two frequencies approaches $e^2/h$, consistent with the theoretical maximum for the AB effect, and harmonics up to third order are observable. Broadband quasiperiodic behavior is reported in a fraction of simply-connected electron waveguide devices that exhibit magnetic asymmetries. Curiously, nanoscale ring devices that are multiply-connected lack signatures of AB quantum interference. The interference phenomena are associated with an inhomogeneous magnetic landscape within the LaAlO$_3$/SrTiO$_3$ nanostructures.

cond-mat.mes-hall↗

arXiv2018

Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels

The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3 heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH) effect, despite a pronounced inconsistency with low-field Hall resistance measurements. Here we report SdH-like resistance oscillations in quasi-1D electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomic force microscopy lithography. These oscillations can be directly attributed to magnetic depopulation of magnetoelectric subbands. Our results suggest that the SdH oscillations in 2D SrTiO3-based systems may originate from naturally forming quasi-1D channels.

cond-mat.mes-hall↗

arXiv2017

Direct Imaging of Sketched Conductive Nanostructures at the LaAlO3/SrTiO3 Interface

Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the conductance is crucial for such devices, it is challenging to directly visualize the local electrical properties at the buried interface. Here we demonstrate conductivity imaging of sketched nanostructures at the LAO/STO interface by microwave impedance microscopy (MIM) with a lateral resolution on the order of 100 nm. The sheet conductance extracted from the MIM data agrees with the transport measurement. The tip-induced insulator-to-metal transition is observed above a threshold voltage of +4 V. Our work paves the way to study emergent phenomena at oxide interfaces by probing nanoscale conductance distribution.

cond-mat.mes-hall↗

arXiv2017

One-Dimensional Nature of Pairing and Superconductivity at the LaAlO$_3$/SrTiO$_3$ Interface

We examine superconductivity in LaAlO$_3$/SrTiO$_3$ channels in which the channel width transitions from the 1D to 2D regime. The superconducting critical current is independent of the channel width and increases approximately linearly with the number of parallel channels. Signatures of electron pairing outside of the superconducting phase are also independent of channel width. Collectively, these results indicate that electron pairing and superconductivity exist at the boundary of these channels and are absent within the interior region of the channels. The intrinsic 1D nature of superconductivity at the LaAlO$_3$/SrTiO$_3$ interface imposes strong physical constraints on possible electron pairing mechanisms.

cond-mat.supr-con↗

arXiv2017

Graphene-Complex-oxide Nanoscale Device Concepts

The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of novel multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Unique capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron-tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine unique transport properties of these two intimately coupled two-dimensional electron systems.

cond-mat.mes-hall↗

arXiv2016

Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO$_3$/SrTiO$_3$ Nanowires

SrTiO$_3$-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO$_3$/SrTiO$_3$ interface can support quantized ballistic transport of electrons and (non-superconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest $e^2/h$ plateau indicate a ballistic mean-free path $l_{MF}\sim$ 20 $\mu$m, more than two orders of magnitude larger than for 2D LaAlO$_3$/SrTiO$_3$ heterostructures. Non-superconducting electron pairs are found to be stable in magnetic fields as high as $B=11$ T, and propagate ballistically with conductance quantized at 2$e^2/h$. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO$_3$/SrTiO$_3$ system and offers a new platform for the study of strongly interacting 1D electronic systems.

cond-mat.mes-hall↗

arXiv2016

Tunable electron-electron interactions in LaAlO3/SrTiO3 nanostructures

The interface between the two complex oxides LaAlO3 and SrTiO3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of sketched quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the dxz and dyz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.

cond-mat.str-el↗

arXiv2016

Micrometer-scale ballistic transport of electron pairs in LaAlO3/SrTiO3 nanowires

High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO$_3$/SrTiO$_3$-based quantum dots have revealed the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here we report evidence for micrometer-scale ballistic transport of electron pairs in quasi-one-dimensional (quasi-1D) LaAlO$_3$/SrTiO$_3$ nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at zero magnetic field). Above a critical magnetic field $B_p$, electron pairs unbind and conductance oscillations shift with magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

cond-mat.mes-hall↗

arXiv2013

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of this 2D electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here we describe magnetotransport experiments on narrow LaAlO3/SrTiO3 structures created by a conductive atomic force microscope lithography technique. Four-terminal local transport measurements on ~10-nm-wide Hall bar structures yield longitudinal resistances that are comparable to the resistance quantum h/e2 and independent of the channel length. Large nonlocal resistances (as large as 10^4 ohms) are observed in some but not all structures with separations between current and voltage that are large compared to the 2D mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below ~200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.

cond-mat.mes-hall↗

arXiv2012

Superconducting LaAlO3/SrTiO3 Nanowires

We report superconductivity in quasi-1D nanostructures created at the LaAlO3/SrTiO3 interface. Nanostructures having line widths w~10 nm are formed from the parent two-dimensional electron liquid using conductive atomic force microscope lithography. Nanowire cross-sections are small compared to the superconducting coherence length in LaAlO3/SrTiO3 (w<<xi~100 nm), placing them in the quasi-1D regime. Broad superconducting transitions with temperature and finite resistances in the superconducting state well below Tc~200 mK are observed. V-I curves show switching between the superconducting and normal states that are characteristic of superconducting nanowires. The four-terminal resistance in the superconducting state shows an unusual dependence on the current path, varying by as much as an order of magnitude.

cond-mat.mes-hall↗

arXiv2009

Probing microwave capacitance of self-assembled quantum dots

Self-assembled quantum dots have remarkable optical, electronic and spintronic properties that make them leading candidates for quantum information technologies. Their characterization requires rapid and local determination of both charge and spin degrees of freedom. We present a way to probe the capacitance of small ensembles of quantum dots at microwave frequencies. The technique employs a capacitance sensor based on a microwave microstrip resonator with sensitivity ~10^(-19) F/rt(Hz), high enough to probe single electrons. The integration of this design in a scanning microscope will provide an important tool for investigating single charge and spin dynamics in self-assembled quantum dot systems.

cond-mat.mes-hall↗