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Gongling Chen

Publications and source records attributed to Gongling Chen.

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Intrinsic Raman Modes and Crystal Symmetry of Altermagnetic $α$-MnTe

Crystal symmetry governs the physical properties of materials and provides the framework for interpreting their microscopic excitations and macroscopic responses. In altermagnets, the crystal symmetries that relate opposite-spin sublattices give rise to momentum-dependent spin splitting despite compensated magnetization. Determining the real crystal symmetry is therefore essential for understanding the intrinsic electronic and magnetic properties. For the altermagnetic semiconductor $α$-MnTe, conflicting Raman assignments have left both its intrinsic lattice excitations and its crystal symmetry unresolved. Here we combine high-resolution Raman and second-harmonic generation (SHG) spectroscopy with first-principles calculations to distinguish intrinsic lattice excitations from Te-derived spectral contributions and to examine bulk inversion symmetry of $α$-MnTe. We show that several prominent Raman features previously assigned to $α$-MnTe instead originate from segregated Te clusters or precipitates. The remaining intrinsic Raman response consists of a single Raman-active mode assigned to the calculated $E_{2g}$ phonon, consistent with the centrosymmetric $D_{6h}$ symmetry. The SHG response agrees with surface electric-dipole and bulk electric-quadrupole contributions expected for a centrosymmetric $D_{6h}$ crystal, supporting the preservation of bulk inversion symmetry in $α$-MnTe. Our findings revise the Raman assignments in $α$-MnTe and provide a basis for interpreting its altermagnetic properties within the appropriate crystal-symmetry framework.

cond-mat.mtrl-sci↗