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Giordano Scappucci

Publications and source records attributed to Giordano Scappucci.

At least 19 recordsLinked to original sources
arXiv2026

Probing Residual Noise at a Decoherence Sweet Spot in a $^{28}$Si/SiGe Spin Qubit

In $^{28}$Si/SiGe spin qubits with micromagnets, the longitudinal stray field gradient transduces charge noise into qubit frequency noise and limits coherence. We compare two neighboring qubits in the same device with 800 ppm residual $^{29}$Si, one near a decoherence sweet spot where the gradient is locally minimized and the other at a position with a larger gradient. At the sweet spot, $T_2^*$ reaches 67 $μ\mathrm{s}$ and the Carr-Purcell-Meiboom-Gill coherence time reaches 4.6 ms, whereas $T_2^*$ is 5.2 $μ\mathrm{s}$ at the neighboring qubit. Near 1 Hz, the frequency noise power spectral density at the sweet spot is nearly two orders of magnitude lower than at the neighboring qubit. The magnitude and low-frequency decay of the residual spectrum are compatible with the prediction for $^{29}$Si nuclear spin noise, and the weak interqubit correlation indicates that local noise becomes important for dephasing at the sweet spot. Despite a finite correlation with the charge sensor, sweet-spot operation strongly reduced the transduction of charge noise, bringing the residual frequency noise close to the level predicted for $^{29}$Si nuclear spin fluctuations.

quant-ph↗
arXiv2026

Spectroscopy With Intelligent Feature Tracking for automated characterization of excited-state structure in semiconductor quantum dot devices

The characterization of excited-state structure in semiconductor quantum dot (QD) devices is an important component of tuning them for spin-qubit operation. We present Spectroscopy With Intelligent Feature Tracking (SWIFT), a framework that combines machine-learning (ML)-assisted feature identification with physics-informed geometric processing to extract energy-level splittings from pulsed-gate spectroscopy data. SWIFT isolates the relevant spectral features and exploits their characteristic geometry to reduce the two-dimensional spectroscopy analysis to a one-dimensional peak-detection problem. It further combines an ensemble-based confidence metric with sequential accumulation of rapid, low-SNR scans, allowing the inferred spectrum to be reevaluated as experimental evidence accumulates. Using Si/SiGe QD devices, we demonstrate SWIFT both offline and in real time, including automated tracking of QD excited states and lead resonances. Benchmarking on 255 manually labeled scans shows that SWIFT reduces the median splitting error to 0.05 mV from 0.11 mV for a classical baseline, with the largest improvement on lower-quality measurements. These results provide a path toward incorporating excited-state spectroscopy into autonomous QD characterization, tuning, and optimization, which will be essential in large-scale quantum dot devices.

cond-mat.mes-hall↗
arXiv2026

Light-Hole Spin Qubits in Strained SiGe Lattice-Matched to Ge

Strained germanium ($\varepsilon$-Ge) quantum wells on metamorphic SiGe buffers have enabled advanced hole-based spin qubit devices. Alternatively, unstrained Ge with lattice-matched strained silicon-germanium ($\varepsilon$-SiGe) barriers eliminates the need for metamorphic buffers altogether. The ground state character of both these platforms is predominantly heavy-hole (HH) with a largely anisotropic spin response. We propose and study an alternative heterostructure, lattice-matched to Ge, in which both the SiGe quantum well and barriers are tensile strained, with their composition contrast providing the band offset for confinement and the tensile strain stabilizing a light-hole (LH) ground state. We show large spin-orbit coupling (SOC), both linear and cubic, along with a significantly more isotropic spin response compared to strained HH qubits. We also study the decoherence properties of the proposed device, showing an appreciable gain in the quality factor compared to their HH counterparts. Finally, we propose a bilayer heterostructure that allows for electrical switching between HH and LH ground state character.

cond-mat.mes-hall↗
arXiv2026

Observation of magnetic quantum phase crossovers in a semiconductor spin ladder

Understanding collective phases of strongly correlated quantum magnets relies on theoretically tractable model systems with precise microscopic control. Antiferromagnetic spin ladders provide such a setting, hosting field-tunable gapped and gapless phases at half filling and unconventional pairing tendencies upon doping. Here, we realize a programmable Heisenberg spin ladder in a half-filled germanium quantum dot array featuring site-resolved, continuously tunable exchange interactions. Under a fixed magnetic field, we vary the rung and leg coupling to map the rung-singlet, canted antiferromagnetic, and fully polarized phases. Hamiltonian-learning protocols combining equilibrium and dynamical measurements quantitatively characterize the ladder, incorporating spin-orbit interactions to reproduce the observed crossover behavior. Measurements of higher-order spin correlators -- including four-point correlations inaccessible to conventional bulk probes -- reveal signatures of the underlying phase structure despite the finite size. Our results establish germanium quantum dot arrays as a controllable platform for quantum magnetism, opening routes to investigate unconventional superconductivity in doped ladders.

cond-mat.mes-hall↗
arXiv2026

Assessing fidelity-limiting factors and achieving single-qubit gate fidelity beyond 99.999% in driven silicon spin qubits

In semiconductor single-spin qubits, high-fidelity quantum gates have been demonstrated; however, achieving consistent performance remains challenging due to variations in driven qubit coherence, which is less explored than free-evolution coherence such as $T_2^*$. Here, we report single-qubit gate fidelities above 99.999%, achieved by dramatically extending the driven-spin coherence time and suppressing off-resonant driving effects that are detrimental to accurate fidelity benchmarking. We demonstrate that removing proximal reservoirs significantly enhances the spin-locking coherence time ($T_{1ρ}$), a critical metric for qubits under microwave driving. Furthermore, we reveal that in typical spin qubit setups using parity readout and rectangular pulses, off-resonant excitation of neighboring qubits causes substantial benchmarking artifacts. By optimizing device conditions to mitigate microwave-induced degradation and implementing spectrally tailored pulse shaping, we achieve a $π/2$ gate fidelity of 99.99920(2)%, with remaining errors primarily limited by incoherent noise. These results showcase the mechanisms that bound fidelity benchmarking in state-of-the-art silicon spin qubits and provide practical guidelines for achieving and verifying high fidelities in these systems.

cond-mat.mes-hall↗
arXiv2026

Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide

Hybrid superconductor-semiconductor systems provide a versatile platform for quantum technologies, ranging from superconducting-spin interfaces to topological quantum devices. Progress toward scalable implementations requires superconductors that exhibit high critical fields ($>1$T) at accessible temperatures integrated with low-disorder semiconductor heterostructures. Here we demonstrate a superconducting platinum iridium germanosilicide (PtIrSiGe), with critical out-of-plane magnetic field up to $B_{\perp} = 1.9$T and critical temperature of $T_c\sim 1.85$K, integrated with planar germanium with mobility $μ= 1.3\times 10^6$cm$^{2}$/Vs via top-down lithography fabrication. We show that the integrity of the germanium quantum well and mobility and density of the 2D hole gas are preserved despite annealing at $500°$C, a temperature comparable to that used for strained germanium epitaxy. We further demonstrate proximitisation of a buried germanium quantum well in a gate-defined Josephson junction/SQUID on a Ge/SiGe heterostructure.

cond-mat.mes-hall↗
arXiv2026

Controllable interaction between photons and distant spins via vacuum Rabi oscillations

Vacuum Rabi oscillations between a single photon and a single spin demonstrate the capability of harnessing light-matter interaction at the level of a single quantum of energy. Since the observation of strong spin-photon coupling in gate-defined quantum dots, probing this interaction in the time-domain has been a major objective. Here, we carefully engineer a device composed of two spatially separated double quantum dots hosting single electron spin qubits and a superconducting cavity to accommodate microwave photons. We observe multiple vacuum Rabi oscillations between each spin qubit and the cavity. By concatenating vacuum Rabi oscillations involving the two spins, an energy excitation in one qubit can be emitted as a photon and then transferred to the other qubit. When a single photon is emitted, the cavity is prepared in a Fock state, leading to an accelerated vacuum Rabi frequency. These results serve as building blocks not only in exploring light-matter interactions, but also in interfacing semiconductor spin qubits to photonic links.

cond-mat.mes-hall↗
arXiv2026

Feedback stabilization of multi-qubit Hamiltonian parameters enabled by single-shot measurement-based sequential Monte Carlo

Fast measurement, signal processing, and accurate estimation of Hamiltonian parameters are essential for feedback control in quantum-classical interface circuitry. However, existing frequentist and Bayesian inference methods typically require a large number of measurements to achieve the accuracy needed to mitigate qubit decoherence. Consequently, feedback control of semiconductor qubits has largely been limited to single-qubit frequency stabilization, whereas two-qubit parameter stabilization remains experimentally unexplored. Here, we demonstrate a real-time feedback framework based on sequential Monte Carlo estimation using one bit of data from a single-shot measurement. Using a four-qubit semiconductor quantum dot device, we rapidly estimate individual qubit frequencies, yielding an approximately twofold increase in coherence time compared with a conventional Bayesian strategy. Moreover, sequential two-qubit parameter estimation using two bits of data enables stabilization of qubit-qubit coupling, allowing both quasi-static frequency drift and exchange-interaction noise to be estimated and suppressed. By shortening the time required for precise parameter estimation, these results demonstrate the importance of the synergistic development of classical and quantum electronics for building robust and scalable quantum technologies in fluctuating environments.

quant-ph↗
arXiv2026

A Degenerate Singlet-Triplet Qubit with All-Electrical Orthogonal Control

Singlet-triplet qubits offer an attractive encoding for semiconductor quantum computing, combining ancilla-free readout, reduced sensitivity to common-mode noise, and baseband voltage control. However, the Zeeman energy difference $ΔE_\mathrm{Z}$ is typically fixed by local magnetic field gradients or $g$-factor inhomogeneities, leaving the exchange interaction $J$ as the only dynamically tunable parameter. This always-on $ΔE_\mathrm{Z}$ precludes orthogonal control of the qubit's rotation axes and introduces unwanted state rotations during idling. Here we demonstrate all-electrical orthogonal control of a degenerate singlet-triplet (DST) qubit formed by two hole spins in a germanium double quantum dot. Exploiting the electrically tunable anisotropic $g$-factors of the two spins, we identify a regime where both $ΔE_\mathrm{Z}$ and $J$ vanish, making the $S$ and $T_0$ states degenerate at the idle point. By applying only baseband voltage pulses, we independently control both $J$ and $ΔE_\mathrm{Z}$, enabling fully orthogonal $Z$- and $X$-axis rotations. Randomized benchmarking yields an average physical single-qubit gate fidelity of 99.53\% for a gate duration of approximately 100 ns. Finally, we electrically tune the degenerate point across a wide range of magnetic field orientations, enabling operation in a regime of enhanced coherence time and offering a route towards multi-qubit scaling under a shared global magnetic field.

cond-mat.mes-hall↗
arXiv2026

Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling

As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimensional mapping of small variations of the electron g-factor of quantum dots formed in planar Si/SiGe quantum wells with precision better than $10^{-3}$ and with nanometer lateral resolution. We scan the electron g-factor across a 40 nm $\times$ 400 nm area and observe two g-factors per QD site which obey a striking symmetry and bimodal distribution across the area. These two g-factors relate to valley states of the electron in the quantum dot in agreement with a recent theoretical model. Using conveyor-belt shuttling of entangled electron spin pairs, complementary to the mapping of the local valley-splitting, we map the g-factor. We compare g-factor and valley splitting maps measured on the same device, and extract the complex intervalley coupling parameter along the shuttle trajectories applying a theoretical model of g-factor dependence on intervalley coupling. These maps will allow unprecedented insights into the spin-valley dynamics during qubit manipulation, readout and shuttling and serve as a benchmark for the engineering of Si/SiGe heterostructures for large-scale quantum chips.

quant-ph↗
arXiv2026

Passive and active suppression of transduced noise in silicon spin qubits

Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge noise, when converted to magnetic noise under a strong magnetic field gradient, often hinders stable qubit operation within a time frame comparable to the data acquisition time. Here, we demonstrate both open- and closed-loop suppression techniques for the transduced noise in silicon spin qubits, resulting in a more than two-fold (ten-fold) improvement of the inhomogeneous coherence time (Rabi oscillation quality) that leads to a single-qubit gate fidelity of over 99.6% even in the presence of a strong decoherence field gradient. Utilizing gate set tomography, we show that adaptive qubit control also reduces the non-Markovian noise in the system, which validates the stability of the gate fidelity. The technique can be used to learn multiple Hamiltonian parameters and is useful for the intermittent calibration of the circuit parameters with affordable experimental overhead, providing a useful subroutine during the repeated execution of general quantum circuits.

quant-ph↗
arXiv2026

Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array

Silicon spin qubits offer a promising path to scalable quantum computing due to their compatibility with industrial semiconductor manufacturing and recent advances in multi-qubit integration. A key requirement for scaling quantum processors is the ability to perform high-fidelity operations in parallel across many qubits. In silicon spin systems, however, simultaneous control remains a major challenge, as fidelities typically degrade under parallel operation. In a five-qubit silicon spin array, we identify microwave-drive-induced AC Stark shifts as the dominant source of this degradation. We address this by introducing a scalable mitigation protocol based solely on pairwise phase calibrations. Using tailored control pulses on a shared control line, we achieve primitive $π/2$ gate fidelities well above 99.99% for each qubit individually, with some approaching 99.999%, surpassing previously reported fidelities in silicon spin qubits. Crucially, these fidelities are preserved above 99.99% during simultaneous operation of up to three qubits. During parallel five-qubit operation, fidelities remain at the practical fault-tolerant threshold of 99.9%, with the loss attributed to drive-induced decoherence resulting from increased microwave power. This effect can be mitigated through device-level improvements. By demonstrating that high-fidelity control is maintained during simultaneous operation, we overcome a central challenge in silicon spin qubits and highlight the potential of shared qubit-control lines for scaling.

quant-ph↗
arXiv2026

Confinement drives valley splitting above 4K in buried silicon quantum wells

Controlling the energy scales of a quantum system is essential for defining robust qubits. In silicon spin qubits, the nearly degenerate conduction-band valleys create a leakage channel from the single-spin computational basis, posing a challenge to scaling and to shuttling-based architectures. Here, we measure the relevant energy scales of single-electron spin qubits in buried silicon quantum wells co-designed for low disorder and high valley splitting. Across a linear array of four quantum dots with an average orbital energy of 2.4(2) meV, we report an average single-electron valley splitting of 0.40(6) meV and an average two-electron singlet-triplet splitting of 0.24(7) meV. In three dots, we observe a strong correlation between valley splitting and orbital energy, with an average linear coefficient of $\approx 0.22$ (meV/meV), demonstrating that electrostatic confinement can increase the valley splitting by several hundred microelectronvolts. In contrast, the remaining dot exhibits the highest valley splitting of 0.76(2) meV and low correlation, suggesting excellent characteristics for spin-qubit operation. Our findings demonstrate that strong confinement can be exploited in buried quantum wells to effectively enhance the valley splitting, thereby establishing a viable path toward the realization of shuttling and sparse-occupation-based architectures in low-disorder heterostructures.

cond-mat.mes-hall↗
arXiv2026

Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates

Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are commonly used to host spin qubits due to their high mobility and low percolation density, the SiGe spacer creates a gap between the qubits and control electrodes, which limits the ability to tune exchange coupling. As a result, residual coupling leads to unwanted single-qubit phase shifts, making multi-qubit control more difficult. In this work, we explore swapping the roles of overlapping nanogates to overcome this issue. By reconfiguring the gate voltages, we demonstrate in situ role switching while maintaining multi-qubit control. Additionally, this method significantly improves the tunability of exchange coupling by several orders of magnitude over the traditional approach. This strategy reduces unintended single-qubit phase shifts and minimizes the complexity of multi-qubit control, supporting scalable growth with minimal experimental overhead.

quant-ph↗
arXiv2026

Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in $^{28}$Si/SiGe

Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot arrays and enabling qubit interconnections through shuttling are hindered by uncontrolled lateral variations of the valley splitting energy $E_{VS}$. We map $E_{VS}$ across a $40 \, $nm x $400 \, $nm region of a $^{28}$Si/Si$_{0.7}$Ge$_{0.3}$ shuttle device and analyze the spin coherence of a single electron spin transported by conveyor-belt shuttling. We observe that the $E_{VS}$ varies over a wide range from $1.5 \, μ$eV to $200 \, μ$eV and is dominated by SiGe alloy disorder. In regions of low $E_{VS}$ and at spin-valley resonances, spin coherence is reduced and its dependence on shuttle velocity matches predictions. Rapid and frequent traversal of low-$E_{VS}$ regions induces a regime of enhanced spin coherence explained by motional narrowing. By selecting shuttle trajectories that avoid problematic areas on the $E_{VS}$ map, we achieve transport over tens of microns with coherence limited only by the coupling to a static electron spin entangled with the mobile qubit. Our results provide experimental confirmation of the theory of spin-decoherence of mobile electron spin-qubits and present practical strategies to integrate conveyor-mode qubit shuttling into silicon quantum chips.

quant-ph↗
arXiv2026

Tailoring Germanium Heterostructures for Quantum Devices with Machine Learning

Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction (SOI), enabling efficient electrical control and engineering of spin degrees of freedom. The most advanced Ge/SiGe heterostructures to date, based on compressively strained Ge channels within strain-relaxed silicon-germanium (SiGe) barriers, exhibit weak SOI due to the heavy-hole character of the wave function, posing challenges for spin-based quantum devices and requiring complex device designs for fast qubit manipulation. In this work, we demonstrate that concrete heterostructure modifications can overcome these limitations, enhancing SOI by up to three orders of magnitude. Specifically, we propose to enrich unstrained Ge channels by localized, strained silicon spikes. Leveraging a multi-objective Bayesian optimization, we optimize the spike profile to maximize SOI, while ensuring compatibility with current epitaxial growth processes and robustness against realistic variations of growth parameters. Our heterostructure substantially enhances device performance, yielding up to two orders of magnitude higher quantum-dot spin qubit quality factors than state-of-the-art materials. We also predict GHz-scale spin splittings for hybrid superconducting Andreev spin qubits. These novel Ge heterostructures with engineered Si concentration profiles can open pathways to scalable quantum and spintronic applications.

cond-mat.mes-hall↗
arXiv2026

Large quantum dot energy level shifts in anomalous photon-assisted tunneling

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the typical control parameter for qubit applications, such energy splitting changes are typically negligible, both as measured in experiment and as assumed in effective theories. Here, we study the singlet-triplet (ST) splittings, which depend on the orbital splittings, of a double quantum dot (DQD) in a Ge/SiGe heterostructure using photon-assisted tunneling (PAT) and pulsed-gate spectroscopy. We find that the ST splittings have a surprising, strong dependence on the top gate voltages, leading to anomalous PAT measurements. We combine data from both measurements in a model that well describes the linear gate-voltage dependence of the ST splittings. Finally, we show that the ST splittings of the two dots exhibit similar linear gate-voltage dependences when the device is retuned such that their ratio is significantly different.

cond-mat.mes-hall↗
arXiv2026

Singlet-triplet oscillations in multivalley Si double quantum dots

Charge separation from the $(4,0)$ to the $(3,1)$ state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was used in recent experiments involving creation of the $(3,1)$ singlet, and subsequent shuttling of one of the electrons. We present a theoretical description of the process of charge separation and singlet-triplet mixing, arriving at expressions for the singlet return probability that take into account experimentally observed finite probabilities of the creation of singlets with various patterns of valley occupations. In our analysis we focus on magnetic fields for which the electron spin Zeeman splitting is close to the valley splitting in one of the dots, when the spin-valley coupling causes a strong renormalization of the frequency of oscillations of singlet return probability. The latter effect has been recently used to perform valley splitting mapping by shuttling of one quantum dot to various locations with respect to the other. We give a detailed description of singlet-triplet dynamics near these spin-valley resonances and compare the results of calculations with measurements on double quantum dots in two distinct Si/SiGe heterostructures. Comparison of theory with experiments in which the presence of a few valley occupation patterns is visible, gives insight into the valley dependence of $g$-factors in these structures, providing support for a recently proposed theoretical model of this dependence. We also discuss how dephasing of singlet return probability oscillations near the spin-valley resonances is affected by valley splitting fluctuations caused by electric field noise.

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