arXiv subjects

Gengdong Zhou

Publications and source records attributed to Gengdong Zhou.

4 recordsLinked to original sources

arXiv2026

Spin-polarized Superconductivity and High-Chern Insulators in Twisted Rhombohedral Graphene Family

Rhombohedral multilayer graphene has emerged as a remarkably versatile platform for exploring strong correlation driven quantum states arising from low-energy topological flat bands. When reconstructed by the moire superlattice, these bands host a wide range of emergent novel states, including integer and fractional Chern insulators and unconventional superconductivity. Here, we firstly report the simultaneous emergence of widespread spin polarized SC and high Chern insulators in twisted bilayer multilayer RMG system 2+n where n=4,5,6. The SC states in 2+n system exhibit different responses to the in plane magnetic field, with SC being suppressed, enhanced and induced by in plane magnetic field . The latter two are consistent with spin-triplet pairing. Along with SC, angle and layer dependent HCIs with tunable Chern numbers emerge. Moreover, the fractional high Chern insulator in the system survives under high in plane magnetic field which can induce SC in the same device. Our work not only establishs twisted bilayer multilayer rhombohedral graphene as a unified platform for studying SC and high Chern insulators, but also opens a pathway towards multiple copropagating chiral Majorana channels by coupling spin-polarized SC to high Chern insulators.

cond-mat.mes-hall↗

arXiv2026

Chern number reversal and emergent superconductivity in rhombohedral graphene induced by in-plane magnetic fields

Rhombohedral graphene with topological flat bands offers an ideal platform for realizing correlated and topological quantum phases. Here we investigate hBN aligned eight-layer rhombohedral graphene moire superlattices, which host a robust quantum anomalous Hall (QAH) state alongside three unconventional superconducting phases. For electron-doped carriers away from the moire potential, we observe QAH Chern number reversal driven by the displacement fields and in plane magnetic fields. For hole-doped carriers near the moire superlattice, the three superconducting phases exhibit distinctively different in plane magnetic field responses: one is weakly enhanced, the second is strongly suppressed, and the third exclusively induced by in plane magnetic field. The isotropic in plane magnetic field response in the QAH regime points to interplay between orbital magnetism and spin-orbit coupling, and the field-emergent superconductivity provides compelling evidence for spin-triplet pairing. Our work demonstrates a highly versatile platform for coexisting topological and superconducting states, and highlights in plane magnetic field as a powerful in-situ control knob for engineering novel quantum devices.

cond-mat.str-el↗

arXiv2026

Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moiré crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and staciking orders. Here we report twisted double rhombohedral-trilayer-gaphene as a new twisted crystalline flatbands system showing rich moiré dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moiré filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moiré fillings including v = 1/4, 1/3 and 1/2 have been observed, whereas the Chern insulator at v = 1 is abscent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.

cond-mat.mes-hall↗

arXiv2024

Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene

Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moiré fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moiré fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moiré translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moiré unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moiré electronics.

cond-mat.mes-hall↗