arXiv subjects

Gaetano Calogero

Publications and source records attributed to Gaetano Calogero.

16 recordsLinked to original sources

arXiv2026

Molecular Dynamics Study of Defect Evolution Mechanisms in 3C-SiC for Quantum Technologies

The migration of point defects and formation of spin defects in 3C-SiC were investigated using molecular dynamics simulations, with migration barriers obtained from Nudged Elastic Band (NEB) calculations and finite temperature diffusivities evaluated using both mean square displacement (MSD) and jump frequency approaches. While both methods reproduce Arrhenius behavior, the jump frequency formulation exhibits improved statistical stability. Activation energies of 2.12~eV for carbon vacancies and 0.88~eV for carbon interstitials are obtained, consistent with literature. The resulting mobility hierarchy governs defect evolution and complex formations. Interstitial vacancy recombination competes with vacancy aggregation into divacancies, influencing the stabilization of spin active defect centers. The study also provides a consistent framework for diffusion analysis in atomistic simulations.

cond-mat.mtrl-sci↗

arXiv2025

First-Principles Investigation of Surface-Induced Effects on the Properties of Divacancy Qubits in 3C-SiC

Neutral silicon-carbon divacancy (V$_{Si}$V$_{C}$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline centers. Within the theoretical framework of spin-polarized Density Functional Theory (DFT), this study examines the structural and electronic characteristics of V$_{Si}$V$_{C}$ centers near a hydrogen-terminated Si-rich (001) surface. A (2x1):H reconstructed slab of 628 atoms represents the near-surface environment, with divacancies located at depths ranging from 0.6 to 1.2 nm in basal and axial orientations. The optimized geometries show localized relaxations, and the electronic structure reveals in-gap defect levels in both spin channels. Furthermore, examination of the zero-field splitting (ZFS) tensor demonstrates sensitivity to the orientation of the spin defects and their distance from the surface. The findings of this investigation suggest that surface proximity exerts a substantial influence on the spin Hamiltonian of divacancies, providing insight for the engineering of SiC-based qubits and nanoscale quantum devices.

cond-mat.mtrl-sci↗

arXiv2025

Quantum transport in nitrogen-doped nanoporous graphenes

Bottom-up on-surface synthesized nanoporous graphenes (NPGs), realized as 2D arrays of laterally covalently bonded $\pi$-conjugated graphene nanoribbons (GNRs), are a family of carbon nanomaterials that are receiving increasing attention for nanoelectronics and biosensing. Recently, a so-called hybrid-NPG (hNPG) is synthesized, featuring an alternating sequence of doped and non-doped GNRs, resulting in a band staggering effect in its electronic structure. Such a feature is appealing for photo-catalysis, photovoltaics and even carbon nanocircuitry. However, to date, little is known about the transport properties of hNPG and its derivatives, which is key for most applications. Here, via Green's functions simulations, the quantum transport properties of hNPGs are studied. It is found that injected carriers in hNPG spread laterally through a number of GNRs, though such spreading may take place exclusively through GNRs of one type (doped or non-doped). A simple model is proposed to discern the key parameters determining the electronic propagation in hNPGs and explore alternative hNPG designs to control the spreading/confinement and anisotropy of charge transport in these systems. For one such design, it is found that it is possible to send directed electric signals with sub-nanometer precision for as long as one micrometer - a result first reported for any NPG.

cond-mat.mes-hall↗

arXiv2025

Tailoring nuclear spins order with defects: a Quantum Technology CAD study

The full design of relevant systems for quantum applications, ranging from quantum simulation to sensing, is presented using a combination of atomistic methods. A prototypical system features a two-dimensional ordered distribution of spins interacting with out-of-plane spin drivers/probes. It could be realized in wide-bandgap semiconductors through open-volume point defects and functionalized surfaces with low Miller indexes. We study the case of defect electron spins (driver / probe) interacting via hyperfine coupling with $S=1/2$ nuclear spins of H atoms chemisorbed onto \hkl(001) and \hkl(111) 3C-SiC surfaces. We simulate the system fabrication processes with super lattice kinetic Monte Carlo, demonstrating that epitaxial growth under time-dependent conditions is a viable method for achieving controlled abundance or depletion of near-surface point defects. Quantum features are evaluated by means of extensive numerical analysis at a full quantum mechanical level based on calibrated models of interacting spin systems. This analysis includes both stationary (relative stability of ordered states) and time-dependent (protocols) conditions, achieved varying the model parameters (in our case the atomic structure and the external field). We identify a rich scenario of metastable spin-waves in the quantum simulation setting. The interaction between protocols and variable system configurations could hinder the effectiveness of the preparation/measurement phases.

quant-ph↗

arXiv2024

Robust quantum engineering of current flow in carbon nanostructures at room temperature

Bottom-up on-surface synthesis enables the fabrication of carbon nanostructures with atomic precision. Good examples are graphene nanoribbons (GNRs), 1D conjugated polymers, and nanoporous graphenes (NPGs), which are gathering increasing attention for future carbon nanoelectronics. A key step is the ability to manipulate current flow within these nanomaterials. Destructive quantum interference (QI), long studied in the field of single-molecule electronics, has been proposed as the most effective way to achieve such control with molecular-scale precision. However, for practical applications, it is essential that such QI-engineering remains effective near or above room temperature. To assess this important point, here we combine large-scale molecular dynamics simulations and quantum transport calculations and focus our study on NPGs formed as arrays of laterally bonded GNRs. By considering various NPGs with different inter-GNR chemical connections we disentangle the different factors determining electronic transport in these carbon nanomaterials at 300 K. Our findings unequivocally demonstrate that QI survives at room temperature, with thermal vibrations weakly restricting current flow along GNRs while completely blocking transport across GNRs. Our results thus pave the way towards the future realization of QI-engineered carbon nanocircuitry operating at room temperature, which is a fundamental step towards carbon-based nanoelectronics and quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation

Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution.

cond-mat.mes-hall↗

arXiv2023

Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys

The properties of liquid Si-Ge binary systems at melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a non-linear dependence of the dielectric functions occurs with the reflectivity of liquid Si-Ge reaching a maximum at 50\% Ge content, being 10\% higher than in pure Si or Ge. Using \textit{ab initio} methodologies, we modelled liquefied Si-Ge alloys, unveiling very high coordination numbers and poor symmetry in the first coordination shell with respect to Si and Ge, related to different bonding properties. We simulated optical functions, quantitatively replicating the aforementioned reflectivity trend and we highlighted a direct relationship between atomic structure and optical properties, indicating that the unusual optics arises from Si-Ge higher local coordination characterized by low symmetry. We forecast further implications for the overall class of these alloys. These findings expand our comprehension of liquefied semiconductors and are essential for implementing controlled laser melting procedures to highly dope these materials for advanced transistors, superconductors, sensors and plasmonic devices.

cond-mat.mtrl-sci↗

arXiv2023

Atomistic insights into ultrafast SiGe nanoprocessing

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

physics.comp-ph↗

arXiv2023

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium.

cond-mat.mes-hall↗

arXiv2021

A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electron and holes of a pnp device using MoS$_2$ for the 10-nm base and WSe$_2$ for emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I$_\text{ON}$/I$_\text{OFF}\sim 10^8$ for $\Delta V_{\rm EB}=0.5$ V. Assuming ballistic transport, we are able to achieve a current gain $\beta\sim$ 10$^4$ over several orders of magnitude of collector current and a cutoff frequency up to the THz range. Exploration of the rich world of bipolar nanoscale device concepts in 2D materials is promising for their potential applications in electronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2019

Quantum interference engineering of nanoporous graphene for carbon nanocircuitry

Bottom-up prepared carbon nanostructures appear as promising platforms for future carbon-based nanoelectronics, due to their atomically precise and versatile structure. An important breakthrough is the recent preparation of nanoporous graphene (NPG) as an ordered covalent array of graphene nanoribbons (GNRs). Within NPG, the GNRs may be thought of as 1D electronic nanochannels through which electrons preferentially move, highlighting NPG's potential for carbon nanocircuitry. However, the {\pi}-conjugated bonds bridging the GNRs give rise to electronic cross-talk between the individual 1D channels, leading to spatially dispersing electronic currents. Here, we propose a chemical design of the bridges resulting in destructive quantum interference, which blocks the cross-talk between GNRs in NPG, electronically isolating them. Our multiscale calculations reveal that injected currents can remain confined within a single, 0.7 nm wide, GNR channel for distances as long as 100 nm. The concepts developed in this work thus provide an important ingredient for the quantum design of future carbon nanocircuitry.

cond-mat.mes-hall↗

arXiv2019

Removing all periodic boundary conditions: Efficient non-equilibrium Green function calculations

We describe a method and its implementation for calculating electronic structure and electron transport without approximating the structure using periodic super-cells. This effectively removes spurious periodic images and interference effects. Our method is based on already established methods readily available in the non-equilibrium Green function formalism and allows for non-equilibrium transport. We present examples of a N defect in graphene, finite voltage bias transport in a point-contact to graphene, and a graphene-nanoribbon junction. This method is less costly, in terms of CPU-hours, than the super-cell approximation.

cond-mat.mes-hall↗

arXiv2018

Multi-scale approach to first-principles electron transport beyond 100 nm

Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables calculations of electronic currents in two-dimensional devices larger than 100 nm$^2$, where multiple perturbed regions described by density functional theory (DFT) are embedded into an extended unperturbed region described by a DFT-parametrized tight-binding model. We explain the details of the method, provide examples, and point out the main challenges regarding its practical implementation. Finally we apply it to study current propagation in pristine, defected and nanoporous graphene devices, injected by chemically accurate contacts simulating scanning tunneling microscopy probes.

cond-mat.mes-hall↗

arXiv2018

Full-scale Simulation of Electron Transport in Nanoporous Graphene: Probing the Talbot Effect

Designing platforms to control phase-coherence and interference of electron waves is a cornerstone for future quantum electronics, computing or sensing. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly [Moreno et al., Science 360, 199 (2018)] opening an avenue for controlling the electronic current in a two-dimensional material. By simulating electron transport in real-sized NPG samples we predict that electron waves injected from the tip of a scanning tunneling microscope (STM) behave similarly to photons in coupled waveguides, displaying a Talbot interference pattern. We link the origins of this effect to the band structure of the NPG and further demonstrate how this pattern may be mapped out by a second STM probe. We enable atomistic parameter-free calculations beyond the 100 nm scale by developing a new multi-scale method where first-principles density functional theory regions are seamlessly embedded into a large-scale tight-binding.

cond-mat.mes-hall↗

arXiv2018

Large-scale tight-binding simulations of quantum transport in ballistic graphene

Graphene has proven to host outstanding mesoscopic effects involving massless Dirac quasiparticles travelling ballistically resulting in the current flow exhibiting light-like behaviour. A new branch of 2D electronics inspired by the standard principles of optics is rapidly evolving, calling for a deeper understanding of transport in large-scale devices at a quantum level. Here we perform large-scale quantum transport calculations based on a tight-binding model of graphene and the non-equilibrium Green's function method and include the effects of $p-n$ junctions of different shape, magnetic field, and absorptive regions acting as drains for current. We stress the importance of choosing absorbing boundary conditions in the calculations to correctly capture how current flows in the limit of infinite devices. As a specific application we present a fully quantum-mechanical framework for the "2D Dirac fermion microscope" recently proposed by B{\o}ggild $et\, al.$ [Nat. Comm. 8, 10.1038 (2017)], tackling several key electron-optical effects therein predicted via semiclassical trajectory simulations, such as electron beam collimation, deflection and scattering off Veselago dots. Our results confirm that a semiclassical approach to a large extend is sufficient to capture the main transport features in the mesoscopic limit and the optical regime, but also that a richer electron-optical landscape is to be expected when coherence or other purely quantum effects are accounted for in the simulations.

cond-mat.mes-hall↗

arXiv2018

Simple and efficient LCAO basis sets for the diffuse states in carbon nanostructures

We present a simple way to describe the lowest unoccupied diffuse states in carbon nanostructures in density functional theory (DFT) calculations using a minimal LCAO (linear combination of atomic orbitals) basis set. By comparing plane wave basis calculations, we show how these states can be captured by adding long-range orbitals to the standard LCAO basis sets for the extreme cases of planar sp2 (graphene) and curved carbon (C60). In particular, using Bessel functions with a long range as additional basis functions retain a minimal basis size. This provides a smaller and simpler atom-centered basis set compared to the standard pseudo-atomic orbitals (PAOs) with multiple polarization orbitals or by adding non-atom-centered states to the basis.

cond-mat.mes-hall↗