arXiv subjects

Gabriele Navickaite

Publications and source records attributed to Gabriele Navickaite.

12 recordsLinked to original sources

arXiv2022

Chaotic microcomb inertia-free parallel ranging

Ever growing pixel acquisition rates in the fields of augmented reality, autonomous driving and robotics have increased interest in solid state beam scanning without moving parts. Modern photonic integrated laser ranging advances towards passive beam steering solutions. Recently demonstrated imagers based on focal plane arrays, nanophotonic metasurfaces, and optical phased arrays enable unprecedented pixel resolution and measurement speed. However, parallelization of >100 lasers and detectors - successfully implemented in commercial time-of-flight sensors - has not been widely adopted for passive scanning approaches. Here, we show both inertia-free and parallel light detection and ranging (LiDAR) with microresonator frequency combs. We used 40 independent channels of a continuously scanned microresonator frequency comb operated in the chaotic regime in combination with optical dispersive elements to perform random modulation LiDAR with 2D passive beam steering.

physics.optics↗

arXiv2022

Low phase noise THz generation from a fiber-referenced Kerr microresonator soliton comb

THz oscillators generated via frequency-multiplication of microwaves are facing difficulty in achieving low phase noise. Photonics-based techniques, in which optical two tones are translated to a THz wave through opto-electronic conversion, are promising if the relative phase noise between the two tones is well suppressed. Here, a THz ($\approx$ 560 GHz) wave with a low phase noise is provided by a frequency-stabilized, dissipative Kerr microresonator soliton comb. The repetition frequency of the comb is stabilized to a long fiber in a two-wavelength delayed self-heterodyne interferometer, significantly reducing the phase noise of the THz wave. A measurement technique to characterize the phase noise of the THz wave beyond the limit of a frequency-multiplied microwave is also demonstrated, showing the superior phase noise of the THz wave to any other photonic THz oscillators (> 300 GHz).

physics.optics↗

arXiv2021

Frequency-scanned microresonator soliton comb with the tracking of the frequency of all comb modes

Rapid and large scanning of a dissipative Kerr-microresonator soliton comb with the characterization of all comb modes along with the separation of the comb modes is imperative for the emerging applications of the frequency-scanned soliton combs. However, the scan speed is limited by the gain of feedback systems and the measurement of the frequency shift of all comb modes has not been demonstrated. To overcome the limitation of the feedback, we incorporate the feedback with the feedforward. With the additional gain of > 40 dB by a feedforward signal, a dissipative Kerr-microresonator soliton comb is scanned by 70 GHz in 500 $\mu$s, 50 GHz in 125 $\mu$s, and 25 GHz in 50 $\mu$s (= 500 THz/s). Furthermore, we propose and demonstrate a method to measure the frequency shift of all comb modes, in which an imbalanced Mach-Zehnder interferometer with two outputs with different wavelengths is used. Because of the two degrees of freedom of optical frequency combs, the measurement at the two different wavelengths enables the estimation of the frequency shift of all comb modes.

physics.optics↗

arXiv2021

Effects of a quiet point on a Kerr microresonator frequency comb

A quiet point, an operating point of pump-resonance detuning that minimizes frequency fluctuation due to nonlinear effects inside a resonator, has been employed for phase noise reduction of a soliton Kerr microresonator frequency comb (microcomb). Naturally, it is expected that the use of the point will also improve performances of a microcomb in terms of frequency stability and faithfulness in a phase locked loop. In this study, we experimentally investigate the effect in a microcomb with a repetition frequency of 300~GHz. We obtain a lowest fractional frequency instability at a quiet point of $1.5\times 10^{-9}$ at 1 second, which is 44 times lower than free-running instability. Phase-locking of a microcomb to a stabilized fiber comb is demonstrated to evaluate performance in a feedback loop, where in-loop-limited relative fractional frequency instability between the microcomb and the fiber comb of $6.8 \times 10^{-13}$ is obtained as an indicator of the stability limitation.

physics.optics↗

arXiv2020

300 GHz wave with attosecond-level timing noise

Optical frequency division (OFD) via optical frequency combs (OFC) has enabled a leap in microwave metrology leading to noise performance never explored before. Extending the method to millimeter-wave (mmW) and terahertz (THz)-wave domain is of great interest. Dissipative Kerr solitons (DKSs) in integrated photonic chips offer a unique feature of delivering OFCs with ultrahigh repetition rates from 10 GHz to 1 THz making them relevant gears to perform OFD in the mmW and THz-wave domain. We experimentally demonstrate OFD of an optically-carried 3.6 THz reference down to 300 GHz through a DKS, photodetected with an ultrafast uni-traveling-carrier photodiode (UTC-PD). A new measurement system, based on the characterization of a microwave reference phase-locked to the 300 GHz signal under test, yields attosecond-level timing noise sensitivity, leveraging conventional technical limitations. This work places DKSs as a leading technology in the mmW and THz-wave field promising breakthroughs in fundamental and civilian applications.

physics.optics↗

arXiv2019

On-chip polarization rotator for type I second harmonic generation

We demonstrate a polarization rotator integrated at the output of a GaAs waveguide producing type I second harmonic generation (SHG). Form-birefringent phase matching between the pump fundamental transverse electric (TE) mode near 2.0 $\mu$m wavelength and the signal fundamental transverse magnetic (TM) mode efficiently generates light at 1.0 $\mu$m wavelength. A SiN waveguide layer is integrated with the SHG device to form a multi-functional photonic integrated circuit. The polarization rotator couples light between the two layers and rotates the polarization from TM to TE or from TE to TM. With a TE-polarized 2.0 $\mu$m pump, type I SHG is demonstrated with the signal rotated to TE polarization. Passive transmission near 1.0 $\mu$m wavelength shows ~80 % polarization rotation across a broad bandwidth of ~100 nm. By rotating the signal polarization to match that of the pump, this SHG device demonstrates a critical component of an integrated self-referenced octave-spanning frequency comb. This device is expected to provide crucial functionality as part of a fully integrated optical frequency synthesizer with resolution of less than one part in 10$^{14}$.

physics.optics↗

arXiv2019

Continuous scanning of a dissipative Kerr-microresonator soliton comb for broadband, high resolution spectroscopy

Dissipative Kerr-microresonator soliton combs (hereafter called soliton combs) are promising to realize chip scale integration of full soliton comb systems providing high precision, broad spectral coverage and a coherent link to the micro/mm/THz domain with diverse applications coming on line all the time. However, the large soliton comb spacing hampers some applications. For example, for spectroscopic applications, there are simply not enough comb lines available to sufficiently cover almost any relevant absorption features. Here, we overcome this limitation by scanning the comb mode spacing by employing PDH locking and a microheater on the microresonator, showing continuous scanning of the soliton comb modes across nearly the full FSR of the microresonator without losing soliton operation, while spectral features with a bandwidth of as small of 5 MHz are resolved. Thus, comb mode scanning allows to cover the whole comb mode spectrum of tens of THz bandwidth with only one chip-scale comb.

physics.app-ph↗

arXiv2018

Nano-imaging of intersubband transitions in van der Waals quantum wells

The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional (2D) materials and hold unexplored potential to overcome the aforementioned limitations: They form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching restrictions. We employ near-field local probing to spectrally resolve and electrostatically control the intersubband absorption with unprecedented nanometer-scale spatial resolution. This work enables exploiting intersubband transitions with unmatched design freedom and individual electronic and optical control suitable for photodetectors, LEDs and lasers.

cond-mat.mes-hall↗

arXiv2017

Image sensor array based on graphene-CMOS integration

Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine other semiconductors than silicon with CMOS. Here, we show for the first time the monolithic integration of a CMOS integrated circuit with graphene, operating as a high mobility phototransistor. We demonstrate a high-resolution image sensor and operate it as a digital camera that is sensitive to UV, visible and infrared light. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.

cond-mat.mes-hall↗

arXiv2016

Phonon-mediated mid-infrared photoresponse of graphene

The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO$_2$ substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.

cond-mat.mes-hall↗

arXiv2015

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.

cond-mat.mes-hall↗

arXiv2015

Electro-mechanical control of an optical emitter using graphene

Active, in situ control of light at the nanoscale remains a challenge in modern physics and in nanophotonics in particular. A promising approach is to take advantage of the technological maturity of nano-electromechanical systems (NEMS) and to combine it with on-chip optics. However, in scaling down the dimensions of such integrated devices, the coupling of a NEMS to optical fields becomes challenging. Despite recent progress in nano-optomechanical coupling, active control of optical fields at the nanoscale has not been achieved with an on-chip NEMS thus far. Here, we show a new type of hybrid system, which consists of an on-chip graphene NEMS suspended a few tens of nanometers above nitrogen-vacancy centres (NVC), which are stable single photon emitters embedded in nano-diamonds. Electromechanical control of the photons emitted by the NVC is provided by electrostatic tuning of the graphene NEMS position, which is transduced to a modulation of NVC emission intensity. The optomechanical coupling between the graphene displacement and the NVC emission is based on near-field dipole-dipole interaction. This class of optomechanical coupling increases strongly for smaller distances, making it suitable for devices with nanoscale dimensions. These achievements hold promise for the selective control of single-emitter arrays on chip, optical spectroscopy of individual nano-objects, integrated optomechanical information processing and quantum optomechanics.

cond-mat.mes-hall↗