arXiv subjects

G. He

Publications and source records attributed to G. He.

7 recordsLinked to original sources

arXiv2024

Simulated TEM imaging of a heavily irradiated metal

We recast the Howie-Whelan equations for generating simulated transmission electron microscope (TEM) images, replacing the dependence on local atomic displacements with atomic positions only. This allows very rapid computation of simulated TEM images for arbitrarily complex atomistic configurations of lattice defects and dislocations in the dynamical two beam approximation. Large scale massively-overlapping cascade simulations performed with molecular dynamics, are used to generate representative high-dose nanoscale irradiation damage in tungsten at room temperature, and we compare the simulated TEM images to experimental TEM images with similar irradiation and imaging conditions. The simulated TEM shows 'white-dot' damage in weak-beam dark-field imaging conditions, in line with our experimental observations and as expected from previous studies, and in bright-field conditions a dislocation network is observed. In this work we can also compare the images to the nanoscale lattice defects in the original atomic structures, and find that at high dose the white spots are not only created by small dislocation loops, but rather arise from nanoscale fluctuations in strains around curved sections of dislocation lines.

cond-mat.mtrl-sci↗

arXiv2024

Chiral electronic excitations and strong electron-phonon coupling to Weyl fermions in the Kagome semimetal Co$_3$Sn$_2$S$_2$

We present results of a Raman scattering study of the Kagome ferromagnet Co$_3$Sn$_2$S$_2$, with a focus on electronic and phononic excitations and their interplay. We provide a theoretical analysis of the electronic band structure, enabling a semi-quantitative explanation of the spectra. A prominent feature in the electronic spectra is a redistribution of spectral weight from low to high energies in all polarization configurations starting at the Curie temperature T$_C$. In the symmetry-resolved spectra, the suppression of the A$_{1g}$ continuum in the ferromagnetic state arises from the redistribution of electronic states below T$_C$, while a strong enhancement of the A$_{2g}$ continuum is linked to the dynamics of fermions near the Fermi level $E_{\rm F}$ being characterized by spin-momentum locking near Weyl points. The A$_{1g}$ phonon modulates the position of these Weyl points and couples strongly to the related fermions close to $E_{\rm F}$. These results allow a comprehensive understanding of the bulk band structure evolution as a function of temperature in Co$_3$Sn$_2$S$_2$, offering key insights for further studies of the driving force behind the long-range magnetic order and novel topological states in this compound.

cond-mat.str-el↗

arXiv2020

Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene

Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this work, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much larger than $e^2/h$. This violation of one of the fundamental tenets of mesoscopic physics dramatically demonstrates how local considerations can be overwhelmed by remote signatures in phase-coherent conductors

cond-mat.mes-hall↗

arXiv2018

Comparison of dynamical and equilibrium surface spin-reorientations: Inferences on the nature of the phase transitions in the presence of dipole interactions

The influence of long-range dipole interactions on two dimensional magnetism has been studied extensively in the spin-reorientation transition of ferromagnetic ultrathin films. Although there is a great deal of experimental information on the perpendicular domain phase that is stabilized by dipole interactions, the transitions to or from the domain phase are subtle and difficult to characterize experimentally. Magnetic susceptibility measurements show no divergence in the vicinity of the spin-reorientation transition as a function of thickness -- a null result that is difficult to interpret with confidence. This article reports separate dynamical and equilibrium versions of the reorientation transition in Fe/2ML Ni/W(110) films, using measurements of the magnetic susceptibility as the films are grown. The dynamical version occurs when increasing the film thickness causes the domain walls to depin, and the system moves from a configuration that minimizes local energetics to one that minimizes global energetics. The dynamical transition \textit{is} marked by a divergent magnetic susceptibility measured with a field applied along the in-plane W[001] direction. A comparative study of the two versions of the same spin-reorientation transition aids in the experimental characterization of the effects of dipole interactions on the phase transitions. This comparison confirms the original null result found in magnetic susceptibility measurements of the equilibrium transition; despite its name, the spin-reorientation transition in ferromagnetic ultrathin films has no critical phase transition in either the magnetization or its orientation.

cond-mat.mtrl-sci↗

arXiv2018

Universal voltage scaling due to self-averaging of the quantum corrections in graphene

The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of any adjustable parameters, shows that this anomaly exhibits a universal, temperature- ($T$) independent form. According to this, the differential conductance is approximately constant at small voltages ($V<k_BT/e$), while at larger voltages it increases logarithmically with the applied bias, reflecting a quenching of the quantum corrections. For theoretical insight into the origins of this behavior, we formulate a model for weak-localization in the presence of nonlinear transport. According to this, the voltage applied under nonequilibrium induces unavoidable dephasing, arising from a self-averaging of the diffusing electron waves responsible for transport. By establishing the manner in which the quantum corrections are suppressed in graphene, our study will be of broad relevance to the investigation of nonequilibrium transport in mesoscopic systems in general. This includes systems implemented from conventional metals and semiconductors, as well as those realized using other two-dimensional semiconductors and topological insulators.

cond-mat.mes-hall↗

arXiv2017

Voltage-induced suppression of weak localization in graphene

In this theoretical study, we explore the manner in which the quantum correction due to weak localization is suppressed in weakly-disordered graphene, when it is subjected to the application of a non-zero voltage. Using a nonequilibrium Green function approach, we address the scattering generated by the disorder up to the level of the maximally crossed diagrams, hereby capturing the interference among different, impurity-defined, Feynman paths. Our calculations of the charge current, and of the resulting differential conductance, reveal the logarithmic divergence typical of weak localization in linear transport. The main finding of our work is that the applied voltage suppresses the weak localization contribution in graphene, by introducing a dephasing time that decreases inversely with increasing voltage.

cond-mat.mes-hall↗

arXiv2016

Local and long-range realizations of a spin-reorientation surface phase transition

The spin reorientation transition of an ultrathin film from perpendicular to in-plane magnetization is driven by a competition between dipole and anisotropy energies. \textit{In situ} measurements of the magnetic susceptibility of Fe/2 ML Ni/W(110) films as a function of Fe coverage, made as the films are deposited at constant temperature, show two clear peaks; one at the long-range and one at the local realization of the transition. In the long-range realization, the susceptibility probes the striped domain pattern that is formed in response to the balance of energetics on a mesoscopic scale. Here the reorientation transition occurs at a non-integer layer thickness. In the local realization, the susceptibility probes the response of small islands with in-plane anisotropy in the 3rd atomic Fe layer that are grown on the 2nd atomic Fe layer, which has perpendicular anisotropy. It is a response to the local finite-size, metastable energetics due to discrete steps in thickness. An excellent quantitative description of the susceptibility data is obtained when both local and long-range aspects of the spin reorientation transition are included.

cond-mat.mtrl-sci↗