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Fengping Li

Publications and source records attributed to Fengping Li.

9 recordsLinked to original sources

A Linear Structure from Magnetic-Dipole Systems and Its Geometry

We investigate a class of algebras on $\mathbb{R}^3$ arising and generalized from the algebraic structure of magnetic gradient fields induced by systems of synchronous magnets with identical dipole moments (i.e., $\mathbf{M}_i=\mathbf{M},\,\forall i$). We show that when there is a $2$ dimensional sub-algebra, the linear structure associated to such an algebra admits a certain type of decompositions, which allows the locating of the dipole moment $\bar{\mathbf{M}}$ that yields the strongest translational force(s) on a test magnet $\mathfrak{m}$. Upper bounds to the strength of this magnetic force are then established.

math.RA

Near room temperature magnetoelectric response and tunable magnetic anisotropy in the two-dimensional magnet 1T-CrTe2

Magnets with controllable magnetization and high critical temperature are essential for practical spintronics devices, among which the two-dimensional 1T-CrTe2 stands out because of its high experimental critical temperature up to about 300K down to the single layer limit. By using ab initio density functional theory, we investigate the magnetic properties of monolayer and bilayer 1T-CrTe2 and demonstrate that the magnetic properties, such as the magnetocrystalline anisotropy, critical Curie temperature and magnetizations, can be influenced by strain or electric fields.

cond-mat.mtrl-sci

Moir\'e exciton polaron engineering via twisted hBN

Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moir\'e superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moir\'e patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moir\'e patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 {\mu}m to 8.7 {\mu}m, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moir\'e domains and investigate the optical property changes induced by the moir\'e pattern in monolayer MoSe2 by varying the moir\'e pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications.

cond-mat.mtrl-sci

Moir\'e flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields

Local interlayer charge polarization of twisted bilayer hexagonal boron nitride (t2BN) is calculated and parametrized as a function of twist angle and perpendicular electric fields through tight-binding calculations on lattice relaxed geometries Lattice relaxations tend to increase the bandwidth of the nearly flat bands, where widths smaller than 1 meV are expected for angle less than 1.08 degree for parallel BN/BN alignment, and for angle less than 1.5 degree for the antiparallel BN/NB alignment. Local interlayer charge polarization maxima of 2.6 pC/m corresponding are expected at the AB and BA stacking sites of BN/BN aligned t2BN in the long moire period limit for angle less than 1 degree, and evolves non-monotonically with a maximum of 3.5 pC/m at angle equal to 1.6 degree before reaching 2 pC/m for angle equal to 6 degree. The electrostatic potential maxima due to the t2BN are overall enhanced by 20 percentage with respect to the rigid system assuming potential modulation depths of up to 300 mV near its surface. In BN/BN aligned bilayers the relative areas of the AB or BA local stacking regions can be expanded or reduced through a vertical electric field depending on its sign.

cond-mat.mes-hall

Ab initio tight-binding Models for Mono- and Bilayer Hexagonal Boron Nitride (h-BN)

Hexagonal boron nitride ($\it h$-BN) exhibits dominant $\pi$-bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately reproduce band edges near the $K$ and $K^{\prime}$ points in the Brillouin zone, a wider bandgap in $\it h$-BN necessitates capturing the band edges at both the $K$ and $M$ points for precise bandgap calculations. We present effective TB models derived from $\it ab initio$ calculations using maximally localized Wannier functions (MLWFs) centered on boron and nitrogen sites. These models consider hopping terms of up to four distant neighbors and achieve excellent agreement with $\it ab initio$ results near the $K$ and $M$ points. Furthermore, we compare the band structures from our simplified models with those obtained from $\it ab initio$ calculations and the full tight-binding model to assess their accuracy. To account for the effects of strains, we introduce fitting parametrizations that relate the hopping parameters of the effective TB model to the lattice constant and interlayer distance. Additionally, we utilize the two-center approximation to calculate the interlayer hopping energies based on the relative distances between sublattices to generalize the interlayer hopping parameters across different stacking configurations. We demonstrate the effectiveness of this method by comparing the electronic structure of zero-twist and twisted $\it h$-BN systems with $\it ab initio$ calculations.

cond-mat.mtrl-sci

Interaction-driven spontaneous broken-symmetry insulator and metals in ABCA tetralayer graphene

Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the stacking orders of tetralayer graphene devices. Through quantum transport measurements, we observe a range of spontaneous broken-symmetry states and their transitions, which can be finely tuned by carrier density n and electric displacement field D. Specifically, we observe a layer antiferromagnetic insulator at n = D = 0 with a gap of approximately 15 meV. Increasing D allows for a continuous phase transition from a layer antiferromagnetic insulator to a layer polarized insulator. By simultaneously tuning n and D, we observe isospin polarized metals, including spin-valley-polarized and spin-polarized metals. These transitions are associated with changes in Fermi surface topology and are consistent with the Stoner criteria. Our findings highlight the efficient fabrication of specially stacked multilayer graphene devices and demonstrate that crystalline multilayer graphene is an ideal platform for investigating a wide range of broken symmetries driven by Coulomb interactions.

cond-mat.mes-hall

Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics

Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for developing room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds.

cond-mat.mtrl-sci

Interlayer Coupling Effect in van der Waals Heterostructures of Transition Metal Dichalcogenides

Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of type-II band alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer, instead of an external electric field. On the basis of symmetry analysis, the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined, and a four-level kp model was developed to obtain the interlayer hopping. Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets. Moreover, the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.

cond-mat.mtrl-sci

Fast Pedestrian Detection based on T-CENTRIST in infrared image

Pedestrian detection is a research hotspot and a difficult issue in the computer vision such as the Intelligent Surveillance System, the Intelligent Transport System, robotics, and automotive safety. However, the human body's position, angle, and dress in a video scene are complicated and changeable, which have a great influence on the detection accuracy. In this paper, through the analysis on the pros and cons of Census Transform Histogram (CENTRIST), a novel feature is presented for human detection Ternary CENTRIST (T-CENTRIST). The T-CENTRIST feature takes the relationship between each pixel and its neighborhood pixels into account. Meanwhile, it also considers the relevancy among these neighborhood pixels. Therefore, the proposed feature description method can reflect the silhouette of pedestrian more adequately and accurately than that of CENTRIST. Second, we propose a fast pedestrian detection framework based on T-CENTRIST in infrared image, which introduces the idea of extended blocks and the integral image. Finally, experimental results verify the effectiveness of the proposed pedestrian detection method.

cs.CV