arXiv subjects
Publications and source records attributed to Feng Liu.
In this paper, using combinatorial and analytic methods, we prove an exact calculating formula on the $2m$-th power mean value of the generalized quadratic Gauss sums for $m\geq 2$. This solves a conjecture of He and Zhang [`On the $2k$-th power mean value of the generalized quadratic Gauss sums', Bull. Korean Math. Soc. 48 (2011), No.1, 9-15].
Recently, there have been intense efforts in searching for new topological insulator (TI) materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z2 number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z2 topology is retained by the concurrent band gap inversions at multiple time-reversal-invariant k-points and associated with the intermediate inter-bilayer coupling of the multi-bilayer Bi film. Our calculations further indicate that the presence of metallic surface states in thick Bi(111) films can be effectively removed by surface adsorption.
Degree of freedom (DoF) region provides an approximation of capacity region in high signal-to-noise ratio (SNR) regime, while sum DoF gives the scaling factor. In this correspondence, we analyse the DoF region and sum DoF for unicast layered multi-hop relay wireless networks with arbitrary number of source/destination/relay nodes, arbitrary number of hops and arbitrary number of antennas at each node. The result is valid for quite a few message topologies. We reveal the limitation on capacity of multi-hop network due to the concatenation structure and show the similarity with capacitor network. From the analysis on bound gap and optimality condition, the ultimate capacity of multi-hop network is shown to be strictly inferior to that of single-hop network. Linear scaling law can be established when the number of hops is fixed. At cost of channel state information at transmitters (CSIT) for each component single-hop network, our achievable scheme avoids routing and simplifies scheduling.
First-principles investigations on the edge energies and edge stresses of single-layer hexagonal boron-nitride (BN) are presented. The armchair edges of BN nanoribbons (BNNRs) are more stable in energy than zigzag ones. Armchair BNNRs are under compressive edge stress while zigzag BNNRs are under tensile edge stress. The intrinsic spin-polarization and edge saturation play important roles in modulating the edge stability of BNNRs. The edge energy difference between BN and graphene could be used to guide the design of the specific hybrid BNC structures: in an armchair BNC nanoribbon (BNCNR), BN domains are expected to grow outside of C domains, while the opposite occurs in a zigzag BNCNR. More importantly, armchair BNCNRs can reproduce unique electronic properties of armchair graphene nanoribbons (GNRs), which are expected to be robust against edge functionalization or disorder. Within certain C/BN ratio, zigzag BNCNRs may exhibit intrinsic half-metallicity without any external constraints. These unexpected electronic properties of BNCNRs may offer unique opportunities to develop nanoscale electronics and spintronics beyond individual graphene and BN. Generally, these principles for designing BNC could be extended to other hybrid nanostructures.
We propose a new class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first principles calculations. They are formed via a two-step combinatorial approach: first by strain engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence their band gaps which share common features with graphene nanoribbons. A cycle of H adsorption/desorption at/from the same surface locations completes a reversible metal-semiconductor-metal transition with the same band gap.
We have performed first-principles calculations of graphene edge stresses, which display two interesting quantum manifestations absent from the classical interpretation: the armchair edge stress oscillates with a nanoribbon width, and the zigzag edge stress is noticeably reduced by spin polarization. Such quantum stress effects in turn manifest in mechanical edge twisting and warping instability, showing features not captured by empirical potentials or continuum theory. Edge adsorption of H and Stone-Wales reconstruction are shown to provide alternative mechanisms in relieving the edge compression and hence to stabilize the planar edge structure.
The criticality of vacancy-induced metal-insulator transition (MIT) in graphene is investigated by Kubo-Greenwood formula with tight-binding recursion method. The critical vacancy concentration for the MIT is determined to be 0.053%. The scaling laws for transport properties near the critical point are examined showing several unconventional 2D localization behaviors. Our theoretical results have shed some new lights to the understanding of recent experiments in H-dosed graphene and of 2D disordered systems in general.
An analytical solution for symmetric Skyrmion was proposed for the SU(2) Skyrme model, which take the form of the hybrid form of a kink-like solution and that given by the instanton method. The static properties of nucleons was then computed within the framework of collective quantization of the Skyrme model, with a good agreement with that given by the exact numeric solution. The comparisons with the previous results as well as the experimental values are also given.
We investigate the dependence of the optical conductivity of bilayer graphene (BLG) on the intra- and inter-layer interactions using the most complete model to date. We show that the next nearest-neighbor intralayer coupling introduces new features in the low-energy spectrum that are highly sensitive to sample doping, changing significantly the ``universal'' conductance. Further, its interplay with interlayer couplings leads to an anisotropy in conductance in the ultraviolet range. We propose that experimental measurement of the optical conductivity of intrinsic and doped BLG will provide a good benchmark for the relative importance of intra- and inter-layer couplings at different doping levels.
We study the coherent exciton transport on Apollonian networks generated by simple iterative rules. The coherent exciton dynamics is modeled by continuous-time quantum walks and we calculate the transition probabilities between two nodes of the networks. We find that the transport depends on the initial nodes of the excitation. For networks less than the second generation the coherent transport shows perfect revivals when the initial excitation starts at the central node. For networks of higher generation, the transport only shows partial revivals. Moreover, we find that the excitation is most likely to be found at the initial nodes while the coherent transport to other nodes has a very low probability. In the long time limit, the transition probabilities show characteristic patterns with identical values of limiting probabilities. Finally, the dynamics of quantum transport are compared with the classical transport modeled by continuous-time random walks.
We present Dalitz-plot analyses of $B^+\to K^+π^-π^+$ and $B^0\to K^+π^-π^0$ using the data sample collected at the $Υ(4S)$ by the BABAR detector. We have found evidence for direct CP-violation in the decay $B^\pm\toρ^0 K^\pm$, with a CP-violation parameter ${\cal A}_{CP}={Γ_{B^+}-Γ_{B^-}\over Γ_{B^+}+Γ_{B^-}}= (+44\pm10\pm4^{+5}_{-13})%$, where $Γ_{B^\pm}$ are the decay rates. The uncertainties are statistical, systematic, and model-dependent, respectively. We also search for the suppressed decays $B^+\to K^-π^+π^+$ and $K^+K^+π^-$ and improve upper limits on the decay branching fractions.
In this paper, we consider the quantum-mechanical phase space patterns on ordered and disordered networks. For ordered networks in which each node is connected to its 2m nearest neighbors (m on either side), the phase space quasi-probability of Wigner function shows various patterns. In the long time limit, on even-numbered networks, we find an asymmetric quasi-probability between the node and its opposite node. This asymmetry depends on the network parameters and specific phase space positions. For disordered networks in which each edge is rewired with probability p>0, the phase space displays regional localization on the initial node.
In this paper, we consider continuous-time quantum walks (CTQWs) on one-dimension ring lattice of N nodes in which every node is connected to its 2m nearest neighbors (m on either side). In the framework of the Bloch function ansatz, we calculate the spacetime transition probabilities between two nodes of the lattice. We find that the transport of CTQWs between two different nodes is faster than that of the classical continuous-time random walk (CTRWs). The transport speed, which is defined by the ratio of the shortest path length and propagating time, increases with the connectivity parameter m for both the CTQWs and CTRWs. For fixed parameter m, the transport of CTRWs gets slow with the increase of the shortest distance while the transport (speed) of CTQWs turns out to be a constant value. In the long time limit, depending on the network size N and connectivity parameter m, the limiting probability distributions of CTQWs show various paterns. When the network size N is an even number, the probability of being at the original node differs from that of being at the opposite node, which also depends on the precise value of parameter m.
We investigate the magnetic properties of nano-holes (NHs) patterned in graphene using first principles calculations. We show that superlattices consisting of a periodic array of NHs form a new family of 2D crystalline "bulk" magnets whose collective magnetic behavior is governed by inter-NH spin-spin interaction. They exhibit long-range magnetic order well above room temperature. Furthermore, magnetic semiconductors can be made by doping magnetic NHs into semiconducting NH superlattices. Our findings offer a new material system for fundamental studies of spin-spin interaction and magnetic ordering in low dimensions, and open up the exciting opportunities of making engineered magnetic materials for storage media and spintronics applications.
We investigate the effect of edge defects (vacancies) and impurities (substitutional dopants) on the robustness of spin-polarization in graphene nanoribbons (GNRs) with zigzag edges, using density-functional-theory calculations. We found that the stability of the spin state and its magnetic moments decrease continuously with increasing concentration of defects or impurities. The system generally becomes non-magnetic at the concentration of one edge defect (impurity) per 10 angstrom. The spin suppression is shown to be caused by reduction and removal of edge states at the Fermi energy. Our analysis implies an important criterion on the GNR samples for spintronics applications.
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.
We demonstrate a method for synthesizing large scale single layer graphene by thermal annealing of ruthenium single crystal containing carbon. Low energy electron diffraction indicates the graphene grows to as large as millimeter dimensions with good long-range order, and scanning tunneling microscope shows perfect crystallinity. Analysis of Moire pattern augmented with first-principles calculations shows the graphene layer is incommensurate with the underlying Ru(0001) surface forming a N by N superlattice with an average lattice strain of ~ +0.81%. Our findings offer an effective method for producing high quality single crystalline graphene for fundamental research and large-scale graphene wafer for device fabrication and integration.
The network properties of a graph ensemble subject to the constraints imposed by the expected degree sequence are studied. It is found that the linear preferential attachment is a fundamental rule, as it keeps the maximal entropy in sparse growing networks. This provides theoretical evidence in support of the linear preferential attachment widely exists in real networks and adopted as a crucial assumption in growing network models. Besides, in the sparse limit, we develop a method to calculate the degree correlation and clustering coefficient in our ensemble model, which is suitable for all kinds of sparse networks including the BA model, proposed by Barabasi and Albert.