arXiv subjects

Feng An

Publications and source records attributed to Feng An.

3 recordsLinked to original sources

arXiv2026

Nonadiabatic Dynamics near Multiple Light-Induced Conical Intersections under Bichromatic Driving: Quantum Wave-Packet Dynamics versus Floquet Surface Hopping

Light-induced conical intersections (LICIs) create externally tunable pathways for nonadiabatic transitions, enabling active control of molecular photophysical and photochemical processes. However, both the dynamics near multiple LICIs under bichromatic driving and the applicability of our recently developed two-mode Floquet fewest switches surface hopping (two-mode F-FSSH) method to this regime remain insufficiently understood. Here, we construct a minimal three-channel Floquet Hamiltonian supporting two LICIs for Na2 interacting with a bichromatic field. We characterize its static Floquet properties and investigate the associated nonadiabatic dynamics using numerically exact quantum wave-packet dynamics and two-mode F-FSSH. We find that the second photon energy controls the relative positions of the LICIs, whereas the second-field intensity primarily redistributes and broadens the derivative-coupling landscape around the second LICI. Consequently, electronic population transfer and molecular alignment exhibit distinct and often nonmonotonic responses to these two control parameters. Two-mode F-FSSH reliably captures the principal features of the early-time dynamics and provides a semiquantitative description of the post-transient time-averaged observables. These findings advance our understanding of LICI-mediated dynamics at both the physical and methodological levels.

physics.chem-ph↗

arXiv2025

Charge-Unified Semiconductor Switching Theory

Semiconductors and their downstream applications sustain the electronic, information, energy and industrial systems underpinning modern society. Improving their sustainability is therefore an urgent global priority, particularly as global electricity generation is projected to increase more than 2.5 fold by 2050. Yet, since the invention of the transistor in 1947, a unified, global view of circuit elements as media for charge redistribution and transfer one that reveals switching inertia and the dynamical nature of switching while connecting microscopic and macroscopic domains across the semiconductor value chain through a common theoretical language has remained absent. Switching consequently lacks a unified mechanistic account of its physical origins and spatiotemporal evolution, with fundamental disconnects between charge- and energy-conservation frameworks, among carrier dynamic mechanisms and across equivalent-circuit formalisms. These limitations fragment research domains and impede sustainability gains, particularly those requiring cross-domain causal information. Here, we present Charge-Unified Semiconductor Switching Theory (CUSST), a general theory that unifies circuit elements through a charge-mediated view, reveals switching inertia and the dynamical nature of switching, bridges these long-standing disconnects and establishes a unified conceptual, mechanistic, formal and analytical framework. Through these unifications, CUSST provides an unusually simple representation of otherwise fragmented switching phenomena. It establishes a unified micro-macro spatiotemporal view of switching, generalizes circuit theory, extends the application of conservation laws and provides a foundation for developing new theoretical systems.

eess.SY↗

arXiv2019

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale with a spontaneous polarization of 79~89uC/cm2. Careful compositional tuning leads to a bulk magnetization of ~0.07uB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0X10-7s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications.

cond-mat.mtrl-sci↗