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Felipe Perez Riffo

Publications and source records attributed to Felipe Perez Riffo.

2 recordsLinked to original sources

Exact vortex decomposition of the shift current

Does any integer survive in the shift current, and does the Chern number control its sign? We show that the shift vector is a singular field on the Brillouin torus. Its curl has two sources: the interband Berry curvature and quantised point charges at the zeros of the transition dipole. Inverting this relation gives an exact decomposition of the shift conductivity, valid at every frequency, into one sector linear in the integer charges and three continuous sectors. As a testing ground, we take a graphene-Haldane bilayer: a model that lets us sweep the interband Chern number through five values at fixed gap to isolate its role. We also test the formalism against the time-reversal-symmetric biased AB bilayer. Whenever a charge sits at the band edge, and trigonal warping is present, the integer sector alone accounts for the band-edge peak. The relevant integer is not the Chern number but the winding of that single charge. Its sign, combined with a valley-dependent profile, sets the sign of the photocurrent. In these bilayers, sign reversals across topological transitions follow this winding; the invariant changes with it only when the same gap closing does both. A band-edge charge needs no invariant. It only requires that the two band-edge sublattices not be connected by the nearest-neighbour hopping, and trigonal warping makes it visible.

cond-mat.mes-hall↗

Slide and Twist: Manipulating Polarization in Multilayer Hexagonal Boron-Nitride

This study explores the world of across-layer sliding ferroelectricity in multilayer hexagonal boron nitride (hBN) and gallium nitride (hGaN), aiming to control out-of-plane polarization. By investigating the effects of sliding single or dual layers in various hBN stacking configurations, we uncover methods for reversing polarization with energy barriers between 5 and 30 meV/f.u., making these methods experimentally viable. Our results show that single-interface sliding is more energetically favorable, with lower barriers compared to multiple interfaces. Certain pathways reveal stable polarization plateaus, where polarization remains constant during specific sliding phases, promising robust polarization control. Moreover, rotated multilayer structures maintain consistent net out-of-plane polarization across different rotation angles. In trilayer ABT structures, rotating the top layer and sliding the bottom layer can reverse polarization, expanding device design possibilities. While the primary focus is on hBN, similar phenomena in hGaN suggest broader applicability for this class of polar materials. The identified energy barriers support the feasibility of fabricating devices based on these multilayer structures.

cond-mat.mtrl-sci↗