arXiv subjects

Fausto Sirotti

Publications and source records attributed to Fausto Sirotti.

At least 19 recordsLinked to original sources

arXiv2025

High-Temperature Activation of Single-Photon Emitters in monolayer WS2

Controlled activation of defect-bound excitonic states in two-dimensional semiconductors provides a route to isolated quantum emitters and a sensitive probe of defect physics. Here we demonstrate that \textit{in situ} high-temperature annealing of hBN-encapsulated monolayer WS$_2$ on a suspended microheater leads to the emergence of spectrally isolated single-photon emitters at cryogenic temperatures. Annealing at temperatures around 1100 K produces a sharp emission line, $X_L$, red-shifted by approximately 80 meV from the neutral exciton and exhibiting a linewidth below 200 $\mu$eV. Photoluminescence excitation spectroscopy and power-dependent measurements show that $X_L$ originates from annealing-induced defects in the WS$_2$ monolayer, while second-order photon correlation measurements reveal clear antibunching with $g^{(2)}(0)<0.5$. These results establish high-temperature \textit{in situ} annealing as a controlled means to access defect-bound excitonic states and single-photon emission in van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2025

Tunable electronic band structure in WSSe van der Waals Alloys

The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals heterostructure assemblies. However, conventional alloying from reference binary TMD compounds to composition-controlled ternary alloys also offers unexplored opportunities. In this work, we use nano-angle resolved photoemission spectroscopy (nano-ARPES) and density functional theory (DFT) calculations to study the structural and electronic properties of different alloy compositions of bulk WS2(1-x)Se2x. Our results demonstrate the continuous variation of the band structure and the progressive evolution of the valence band splitting at the K points from 420 to 520 meV in bulk WS2(1-x)Se2x. We also carried out scanning tunneling microscopy (STM) measurements and DFT to understand the possible S or Se substitutions variants in WS2(1-x)Se2x alloys, with different local atomic configurations. Our work opens up perspectives for the fine control of the band dispersion in van der Waals materials and demonstrate how the band structure can be tuned in bulk TMDs. The collected information can serve as a reference for future applications.

cond-mat.mtrl-sci↗

arXiv2025

Crystal field tuned spin-flip luminescence in NiPS3

Layered magnetic materials potentially hold the key to future applications based on optical control and manipulation of magnetism. NiPS3, a prototype member of this family, is antiferromagnetic below 155 K and exhibits sharp photoluminescence associated to a transition between a triplet ground state and a singlet excited state. The nature of the luminescent transition is a matter of current debate and so is an eventual fundamental link of this excitation to magnetism. Here we provide answers through experiments and calculations. We fabricate samples with metal and ligand substitutions which alter the Neel transition temperature and measure the effects of these changes on the temperature dependent photoluminescence. We perform crystal field and charge transfer multiplet calculations to explain the origin of the excitation and identify the effects of the magnetic ground state on its properties. These measurements and calculations provide a comprehensive explanation for the observed properties and a template for finding similar materials exhibiting spin-flip luminescence.

cond-mat.mtrl-sci↗

arXiv2024

Laser induced ultrafast Gd 4f spin dynamics at the surface of amorphous CoxGd100-x ferrimagnetic alloys

We have investigated the laser induced ultrafast dynamics of Gd 4f spins at the surface of CoxGd100-x alloys by means of surface-sensitive and time-resolved dichroic resonant Auger spectroscopy. We have observed that the laser induced quenching of Gd 4f magnetic order at the surface of the CoxGd100-x alloys occur on a much longer time scale than that previously reported in bulk sensitive time-resolved experiments. In parallel, we have characterized the static structural and magnetic properties at the surface and in the bulk of these alloys by combining Physical Property Measurement System (PPMS) magnetometry with X-ray Magnetic Circular Dichroism in absorption spectroscopy (XMCD) and X-Ray Photoelectron spectroscopy (XPS). The PPMS and XMCD measurements give information regarding the composition in the bulk of the alloys. The XPS measurements show non-homogeneous composition at the surface of the alloys with a strongly increased Gd content within the first layers compared to the nominal bulk values. Such larger Gd concentration results in a reduced indirect Gd 4f spin-lattice coupling. It explains the slower Gd 4f demagnetization we have observed in our surface-sensitive and time-resolved measurements compared to that previously reported by bulk-sensitive measurements.

cond-mat.mtrl-sci↗

arXiv2021

Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pumping

We investigate with polarized microphotoluminescence the optical pumping of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride at cryogenic temperatures. We report a large steady state valley polarization of the different excitonic complexes following circularly-polarized laser excitation 25 meV above the neutral exciton transition. For the first time in this material we reveal efficient valley pumping of positively-charged trions, which were so far elusive in non-encapsulated monolayers due to defect and laser-induced large electron doping. We find that negatively-charged trions present a polarization of 70 % which is unusually large for non-resonant excitation. We attribute this large valley polarization to the particular band structure of MoS2, where an optically dark exciton ground state coexists with a bright conduction band ordering in the single-particle picture, leading to a supression of the valley relaxation for negatively-charged trions. In addition, we demonstrate that circular excitation induces a dynamical polarization of resident electrons and holes, as recently shown in tungsten-based monolayers. This manifest itself as a variation in the intensity of different excitonic complexes under circular and linear excitation.

cond-mat.mes-hall↗

arXiv2021

Imaging Seebeck drift of excitons and trions in MoSe2 monolayers

Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS2 monolayers at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening without the appereance of a halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as thermal drift of trions due to a Seebeck term in the particle current. The model shows that the difference between trion and exciton profiles is simply understood in terms of the very different lifetimes of these two quasiparticles.

cond-mat.mtrl-sci↗

arXiv2021

Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers

Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pumping of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate doping and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light.

cond-mat.mes-hall↗

arXiv2021

Subpicosecond metamagnetic phase transition driven by non-equilibrium electron dynamics

Femtosecond light-induced phase transitions between different macroscopic orders provide the possibility to tune the functional properties of condensed matter on ultrafast timescales. In first-order phase transitions, transient non-equilibrium phases and inherent phase coexistence often preclude non-ambiguous detection of transition precursors and their temporal onset. Here, we present a study combining time-resolved photoelectron spectroscopy and ab-initio electron dynamics calculations elucidating the transient subpicosecond processes governing the photoinduced generation of ferromagnetic order in antiferromagnetic FeRh. The transient photoemission spectra are accounted for by assuming that not only the occupation of electronic states is modified during the photoexcitation process. Instead, the photo-generated non-thermal distribution of electrons modifies the electronic band structure. The ferromagnetic phase of FeRh, characterized by a minority band near the Fermi energy, is established 350+- 30 fs after the laser excitation. Ab-initio calculations indicate that the phase transition is initiated by a photoinduced Rh-to-Fe charge transfer.

cond-mat.str-el↗

arXiv2020

Single-layer graphene on epitaxial FeRh thin films

Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may enable its utilization in spintronic devices. This paper presents fabrication and detailed characterization of single-layer graphene formed on the surface of epitaxial FeRh thin films. The magnetic state of the FeRh surface can be controlled by temperature, magnetic field or strain due to interconnected order parameters. Characterization of graphene layers by X-ray Photoemission and X-ray Absorption Spectroscopy, Low-Energy Ion Scattering, Scanning Tunneling Microscopy, and Low-Energy Electron Microscopy shows that graphene is single-layer, polycrystalline and covers more than 97% of the substrate. Graphene displays several preferential orientations on the FeRh(001) surface with unit vectors of graphene rotated by 30{\deg}, 15{\deg}, 11{\deg}, and 19{\deg} with respect to FeRh substrate unit vectors. In addition, the graphene layer is capable to protect the films from oxidation when exposed to air for several months. Therefore, it can be also used as a protective layer during fabrication of magnetic elements or as an atomically thin spacer, which enables incorporation of switchable magnetic layers within stacks of 2D materials in advanced devices.

cond-mat.mtrl-sci↗

arXiv2019

Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganites

We combine time resolved pump-probe Magneto-Optical Kerr Effect and Photoelectron Spectroscopy experiments supported by theoretical analysis to determine the relaxation dynamics of delocalized electrons in half-metallic ferromagnetic manganite $La_{1-x}Sr_{x}MnO_{3}$. We observe that the half-metallic character of $La_{1-x}Sr_{x}MnO_{3}$ determines the timescale of both the electronic phase transition and the quenching of magnetization, revealing a quantum isolation of the spin system in double exchange ferromagnets extending up to hundreds of picoseconds. We demonstrate the use of time-resolved hard X-ray photoelectron spectroscopy (TR-HAXPES) as a unique tool to single out the evolution of strongly correlated electronic states across a second-order phase transition in a complex material.

cond-mat.str-el↗

arXiv2019

Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic

cond-mat.mes-hall↗

arXiv2018

Dispersing and non-dispersing satellites in the photoemission spectra of aluminum

Satellites in electronic spectra are pure many-body effects, and their study has been of increasing interest in both experiment and theory. The presence of satellites due to plasmon excitations can be understood with simple models of electron-boson coupling. It is far from obvious how to match such a model to real spectra, where more than one kind of quasi-particle and of satellite excitation coexist. Our joint experimental and theoretical study shows that satellites in the angle-resolved photoemission spectra of the prototype simple metal aluminum consist of a superposition of dispersing and non-dispersing features. Both are due to electron-electron interaction, but the non-dispersing satellites also reflect the thermal motion of the atoms. Moreover, besides their energy dispersion, we also show and explain a strong shape dispersion of the satellites. By taking into account these effects, our first principles calculations using the GW+C approach of many-body perturbation theory reproduce and explain the experimental spectra to an unprecedented extent.

cond-mat.str-el↗

arXiv2018

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.

cond-mat.mtrl-sci↗

arXiv2018

Laser induced phase transition in epitaxial FeRh layers studied by pump-probe valence band photoemission

We use time-resolved X-ray photoelectron spectroscopy to probe the electronic and magnetization dynamics in FeRh films after ultrafast laser excitations. We present experimental and theoretical results which investigate the electronic structure of the FeRh during the first-order phase transition identifying a clear signature of the magnetic phase. We find that a spin polarized feature at the Fermi edge is a fingerprint of the magnetic status of the system that is independent of the long-range ferromagnetic alignment of the magnetic domains. We use this feature to follow the phase transition induced by a laser pulse in a pump-probe experiment and find that the magnetic transition occurs in less than 50 ps, and reaches its maximum in 100 ps.

cond-mat.str-el↗

arXiv2017

Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic properties are highly dependent on the number of layers. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate the tunability of the quasiparticle energy gap of few layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy (MBE). Our results show that the band gap is about 3.50 +/-0.05 eV for single-tetralayer (1TL), 3.00 +/-0.05 eV for bi-tetralayer (2TL) and 2.30 +/-0.05 eV for tri-tetralayer (3TL). This band gap evolution of GaSe, in particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced doping.

cond-mat.mtrl-sci↗

arXiv2015

Stable room-temperature ferromagnetic phase at the FeRh(100) surface

Interfaces and low dimensionality are sources of strong modifications of electronic, structural, and magnetic properties of materials. FeRh alloys are an excellent example because of the first-order phase transition taking place at $\sim$400 K from an antiferromagnetic phase at room temperature to a high temperature ferromagnetic one. It is accompanied by a resistance change and volume expansion of about 1\%. We have investigated the electronic and magnetic properties of FeRh(100) epitaxially grown on MgO by combining spectroscopies characterized by different probing depths, namely X-ray magnetic circular dichroism and photoelectron spectroscopy. We thus reveal that the symmetry breaking induced at the Rh-terminated surface stabilizes a surface ferromagnetic layer involving five planes of Fe and Rh atoms in the nominally antiferromagnetic phase at room temperature. First-principles calculations provide a microscopic description of the structural relaxation and the electron spin-density distribution that fully support the experimental findings.

cond-mat.mtrl-sci↗

arXiv2013

Silicon Sheets By Redox Assisted Chemical Exfoliation

In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.

physics.chem-ph↗

arXiv2013

Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2x1)

We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. This superstructure corresponds to Si nanoribbons all oriented along the [-110] direction as revealed by LEED and scanning tunneling microscopy (STM). STM and high-resolution photoemission spectroscopy indicate that the nanoribbons are flat and predominantly 1.6 nm wide. In addition the silicon atoms show signatures of two chemical environments corresponding to the edge and center of the ribbons.

cond-mat.mtrl-sci↗