arXiv subjects

Fang Lin

Publications and source records attributed to Fang Lin.

6 recordsLinked to original sources

arXiv2023

Tunable correlation effects of magnetic impurities by the cubic Rashba spin-orbit couplings

We theoretically study the influence of the $k$-cubic Rashba spin-orbit coupling (SOC) on the correlation effects of magnetic impurities by combining the variational method and the Hirsch-Fye quantum Monte Carlo (HFQMC) simulations. Markedly different from the normal $k$-linear Rashba SOC, even a small cubic Rashba term can greatly alter the band structure and induce a Van Hove singularity in a wide range of energy, thus the single impurity local moment becomes largely tunable. The cubic Rashba SOC adopted in this work breaks the rotational symmetry, but the host material is still invariant under the operations $\mathcal{R}^z(\pi)$, $\mathcal{IR}^z(\pi/2)$, $\mathcal{M}_{xz}$, $\mathcal{M}_{yz}$, where $\mathcal{R}^z(\theta)$ is the rotation of angle $\theta$ about the $z$-axis, $\mathcal{I}$ is the inversion operator and $\mathcal{M}_{xz}$ ($\mathcal{M}_{yz}$) is the mirror reflection about the $x$-$z$ ($y$-$z$) principal plane. Saliently, various components of spin-spin correlation between the single magnetic impurity and the conduction electrons show three- or six-fold rotational symmetry. This unique feature is due to the triple winding of the spins with a $2\pi$ rotation of $\mathbf{k}$, which is a hallmark of the cubic Rashba effect and can possibly be an identifier to distinguish the cubic Rashba SOC from the normal $k$-linear Rashba term in experiments. Although the cubic Rashba term drastically alters the electronic properties of the host, we find that the spatial decay rate of the spin-spin correlation function remains essentially unchanged. Moreover, the carrier-mediated Ruderman-Kittel-Kasuya-Yosida interactions between two magnetic impurities show twisted features, the ferromagnetic diagonal terms dominate when two magnetic impurities are very close, but the off-diagonal terms become important at long distances.

cond-mat.str-el↗

arXiv2021

R2RNet: Low-light Image Enhancement via Real-low to Real-normal Network

Images captured in weak illumination conditions could seriously degrade the image quality. Solving a series of degradation of low-light images can effectively improve the visual quality of images and the performance of high-level visual tasks. In this study, a novel Retinex-based Real-low to Real-normal Network (R2RNet) is proposed for low-light image enhancement, which includes three subnets: a Decom-Net, a Denoise-Net, and a Relight-Net. These three subnets are used for decomposing, denoising, contrast enhancement and detail preservation, respectively. Our R2RNet not only uses the spatial information of the image to improve the contrast but also uses the frequency information to preserve the details. Therefore, our model acheived more robust results for all degraded images. Unlike most previous methods that were trained on synthetic images, we collected the first Large-Scale Real-World paired low/normal-light images dataset (LSRW dataset) to satisfy the training requirements and make our model have better generalization performance in real-world scenes. Extensive experiments on publicly available datasets demonstrated that our method outperforms the existing state-of-the-art methods both quantitatively and visually. In addition, our results showed that the performance of the high-level visual task (i.e. face detection) can be effectively improved by using the enhanced results obtained by our method in low-light conditions. Our codes and the LSRW dataset are available at: https://github.com/abcdef2000/R2RNet.

cs.CV↗

arXiv2018

Atomic process of oxidative etching in monolayer molybdenum disulfide

The microscopic process of oxidative etching of two-dimensional molybdenum disulfide (2D MoS2) at an atomic scale is investigated using a correlative TEM-etching study. MoS2 flakes on graphene TEM grids are precisely tracked and characterized by TEM before and after the oxidative etching. This allows us to determine the structural change with an atomic resolution on the edges of the domains, of well-oriented triangular pits and along the grain boundaries. We observe that the etching mostly starts from the open edges, grain boundaries and pre-existing atomic defects. A zigzag Mo edge is assigned as the dominant termination of the triangular pits, and profound terraces and grooves are observed on the etched edges. Based on the statistical TEM analysis, we reveal possible routes for the kinetics of the oxidative etching in 2D MoS2, which should also be applicable for other 2D transition metal dichalcogenide materials like MoSe2 and WS2.

cond-mat.mtrl-sci↗

arXiv2018

AgileNet: Lightweight Dictionary-based Few-shot Learning

The success of deep learning models is heavily tied to the use of massive amount of labeled data and excessively long training time. With the emergence of intelligent edge applications that use these models, the critical challenge is to obtain the same inference capability on a resource-constrained device while providing adaptability to cope with the dynamic changes in the data. We propose AgileNet, a novel lightweight dictionary-based few-shot learning methodology which provides reduced complexity deep neural network for efficient execution at the edge while enabling low-cost updates to capture the dynamics of the new data. Evaluations of state-of-the-art few-shot learning benchmarks demonstrate the superior accuracy of AgileNet compared to prior arts. Additionally, AgileNet is the first few-shot learning approach that prevents model updates by eliminating the knowledge obtained from the primary training. This property is ensured through the dictionaries learned by our novel end-to-end structured decomposition, which also reduces the memory footprint and computation complexity to match the edge device constraints.

cs.LG↗

arXiv2016

Direct identification of monolayer rhenium diselenide by an individual diffraction pattern

In the current extensive studies of transition metal dichalcogenides (TMDCs), compared to hexagonal layered materials, like graphene, hBN and MoS2, low symmetry layered 2D crystals showed great potential for applications in anisotropic devices. Rhenium diselenide (ReSe2) has the bulk space group P1 and belongs to triclinic crystal system with a deformed cadmium iodide type structure. Here we unambiguously determined monolayer and its vertical orientation of rhenium diselenide membrane with an individual electron diffraction pattern, which could be applicable to low symmetry crystal systems, including both triclinic and monoclinic lattices, as long as their third unit-cell basis vector is not perpendicular to basal plane. Atomically resolved image from probe corrected annular dark field scanning transmission electron microscope (ADF-STEM) was employed to validate layer number. Finally, experimental results were well explained by kinematical electron diffraction theory and corresponding simulations.

cond-mat.mtrl-sci↗

arXiv2016

Anderson localization in metallic nanoparticle arrays

Anderson localization has been observed in various types of waves, such as matter waves, optical waves and acoustic waves. Here we reveal that the effect of Anderson localization can be also induced in metallic nonlinear nanoparticle arrays excited by a random electrically driving field. We find that the dipole-induced nonlinearity results in ballistic expansion of dipole intensity during evolution; while the randomness of the external driving field can suppress such an expansion. Increasing the strength of randomness above the threshold value, a localized pattern of dipole intensity can be generated in the metallic nanoparticle arrays. By means of statistics, the mean intensity distribution of the dipoles reveals the formation of Anderson localization. We further show that the generated Anderson localization is highly confined, with its size down to the scale of incident wavelength. The reported results might facilitate the manipulations of electromagnetic fields in the scale of wavelength.

physics.optics↗