F. Cheynis | arXiv Science

arXiv2016

Spatial inhomogeneity and temporal dynamics of a 2D electron gas in interaction with a 2D adatom gas

Fundamental interest for 2D electron gas (2DEG) systems has been recently renewed with the advent of 2D materials and their potential high-impact applications in optoelectronics. Here, we investigate a 2DEG created by the electron transfer from a Ag adatom gas deposited on a Si(111)$\sqrt{3}\times\sqrt{3}$-Ag surface to an electronic surface state. Using low-energy electron microscopy (LEEM), we measure the Ag adatom gas concentration and the 2DEG-induced charge transfer. We demonstrate a linear dependence of the surface work function change on the Ag adatom gas concentration. A breakdown of the linear relationship is induced by the occurrence of the Ag adatom gas superstructure identified as Si(111)$\sqrt{21}\times\sqrt{21}$-Ag only observed below room temperature. We evidence below room temperature a confinement of the 2DEG on atomic terraces characterised by spatial inhomogeneities of the 2DEG-induced charge transfer along with temporal fluctuations. These variations mirror the Ag adatom gas concentration changes induced by the growth of 3D Ag islands and the occurrence of an Ehrlich-Schwoebel diffusion barrier of 155$\pm$10meV.

cond-mat.mtrl-sci↗

arXiv2015

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1\times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $\mu$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Syst\`eme International d'unit\'es (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.

cond-mat.mes-hall↗