arXiv subjects

Evan Golden

Publications and source records attributed to Evan Golden.

6 recordsLinked to original sources

arXiv2023

Extremely Large Area (88 mm X 88 mm) Superconducting Integrated Circuit (ELASIC)

Superconducting integrated circuit (SIC) is a promising "beyond-CMOS" device technology enables speed-of-light, nearly lossless communications to advance cryogenic (4 K or lower) computing. However, the lack of large-area superconducting IC has hindered the development of scalable practical systems. Herein, we describe a novel approach to interconnect 16 high-resolution deep UV (DUV EX4, 248 nm lithography) full reticle circuits to fabricate an extremely large (88mm X 88 mm) area superconducting integrated circuit (ELASIC). The fabrication process starts by interconnecting four high-resolution DUV EX4 (22 mm X 22 mm) full reticles using a single large-field (44 mm X 44 mm) I-line (365 nm lithography) reticle, followed by I-line reticle stitching at the boundaries of 44 mm X 44 mm fields to fabricate the complete ELASIC field (88 mm X 88 mm). The ELASIC demonstrated a 2X-12X reduction in circuit features and maintained high-stitched line superconducting critical currents. We examined quantum flux parametron (QFP) circuits to demonstrate the viability of common active components used for data buffering and transmission. Considering that no stitching requirement for high-resolution EX4 DUV reticles is employed, the present fabrication process has the potential to advance the scaling of superconducting quantum devices.

cond-mat.supr-con↗

arXiv2022

Low-Cost Superconducting Fan-Out with Cell I$_\text{C}$ Ranking

Superconductor electronics (SCE) promise computer systems with orders of magnitude higher speeds and lower energy consumption than their complementary metal-oxide semiconductor (CMOS) counterparts. At the same time, the scalability and resource utilization of superconducting systems are major concerns. Some of these concerns come from device-level challenges and the gap between SCE and CMOS technology nodes, and others come from the way Josephson Junctions (JJs) are used. Towards this end, we notice that a considerable fraction of hardware resources are not involved in logic operations, but rather are used for fan-out and buffering purposes. In this paper, we ask if there is a way to reduce these overheads, propose the use of JJs at the cell boundaries to increase the number of outputs that a single stage can drive, and establish a set of rules to discretize critical currents in a way that is conducive to this assignment. Finally, we explore the design trade-offs that the presented approach opens up and demonstrate its promise through detailed analog simulations and modeling analyses. Our experiments indicate that the introduced method leads to a 48% savings in the JJ count for a tree with a fan-out of 1024, as well as an average of 43% of the JJ count for signal splitting and 32% for clock splitting in ISCAS'85 benchmarks.

cs.ET↗

arXiv2021

Fabrication of superconducting through-silicon vias

Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challenging. Here, we discuss our approach for realizing high-aspect-ratio superconducting TSVs\textemdash 10 $\mu$m wide by 20 $\mu$m long by 200 $\mu$m deep\textemdash with densities of 100 electrically isolated TSVs per square millimeter. We characterize the DC and microwave performance of superconducting TSVs at cryogenic temperatures and demonstrate superconducting critical currents greater than 20 mA. These high-aspect-ratio, high critical current superconducting TSVs will enable high-density vertical signal routing within superconducting quantum processors.

quant-ph↗

arXiv2020

Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators

Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.

quant-ph↗

arXiv2019

Planarized Fabrication Process With Two Layers of SIS Josephson Junctions and Integration of SIS and SFS {\pi}-Junctions

We present our new fabrication Process for Superconductor Electronics (PSE2) that integrates two (2) layers of Josephson junctions in a fully planarized multilayer process on 200-mm wafers. The two junction layers can be, e.g., conventional Superconductor-Insulator-Superconductor (SIS) Nb/Al/AlO_x/Nb junctions with the same or different Josephson critical current densities, J_c. The process also allows integration of high-J_c Superconductor-Ferromagnet-Superconductor (SFS) or SFS'S JJs on the first junction layer with Nb/Al/AlO_x/Nb trilayer junctions on the second junction layer, or vice versa. In the present node, the SFS trilayer, Nb/Ni/Nb is placed below the standard SIS trilayer and separated by one niobium wiring layer. The main purpose of integrating the SFS and SIS junction layers is to provide compact {\pi}-phase shifters in logic cells of superconductor digital circuits and random access memories, and thereby increase the integration scale and functional density of superconductor electronics. The current node of the two-junction-layer process has six planarized niobium layers, two layers of resistors, and 350-nm minimum feature size. The target Josephson critical current densities for the SIS junctions are 100 {\mu}A/{\mu}m^2 and 200 {\mu}A/{\mu}m^2. We present the salient features of the new process, fabrication details, and characterization results on two layers of Josephson junctions integrated into one process, both for the conventional and {\pi}-junctions.

cond-mat.supr-con↗

arXiv2018

Determining interface dielectric losses in superconducting coplanar waveguide resonators

Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance in superconducting circuits. In this work, we present a method for quantifying the TLS losses of different bulk and interfacial dielectrics present in superconducting coplanar waveguide (CPW) resonators. By combining statistical characterization of sets of specifically designed CPW resonators on isotropically etched silicon substrates with detailed electromagnetic modeling, we determine the separate loss contributions from individual material interfaces and bulk dielectrics. This technique for analyzing interfacial TLS losses can be used to guide targeted improvements to qubits, resonators, and their superconducting fabrication processes.

quant-ph↗